Using Reflect on a GaAs/AlGaAs Stripe Geometry Laser

laserex04.in : Using Reflect on a GaAs/AlGaAs Stripe Geometry Laser

Requires: Blaze/Laser
Minimum Versions: Atlas 5.28.1.R

This example demonstrates the use of a reflecting laser boundary condition for the simulation of a stripe geometry GaAs/AlGaAs laser diode . The example shows:

  • Laser structure definition using Atlas syntax
  • Material parameters specification
  • Setting conventional physical models
  • Device initial biasing
  • Activating LASER module of Atlas
  • Mesh definition for solving the Helmholtz wave equation
  • Definition of laser physical models and their parameters including a physically based frequency dependent optical gain model
  • Comparison between the full laser diode structure and simulation of only half the structure but with a reflecting laser boundary condition

The logistics of the structure, material parameters and physical models definition repeat that of the previous examples in this section. Refer to those examples for more detailed explanations.

Two simulations are performed; the first simulation is of only half the structure by assuming reflection around the x=0 plane and the second simulation is of the entire device.

To create the reflecting laser boundary condition, the reflect parameter of the laser statement should be specified. This automatically assumes that the device is reflected around the x=0 plane. Also, the device mesh should have the diagonal triangle flipping turned off by specifying the parameter ^diag.flip on the mesh statement.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.