Silicon p-i-n Waveguide Modulator

laserex12.in : Silicon p-i-n Waveguide Modulator

Requires: Blaze/Quantum/Laser
Minimum Versions: Atlas 5.28.1.R

This example demostrates a simulation of Si p-i-n modulator using a WAVEGUIDE statement. The modulation mechanism is based on electroabsorption by free-carriers, which are injected into the waveguide. The free-carrier absorption model, specified by ABS.FCARRIER on the MODELS statement, can be modified n the MATERIAL statement using parameters FC.AN, FC.AP, FC.RN, FC.RP, etc.

Local refractive index at a particular location can be stored into the IV log file using PROBE statement. In addition, a dispersion of local refractive index can be stored in a separate file, using SAVE statement and REFR.SPEC parameter.

The WAVEGUIDE statement can be used as a standlone optical eigen solver for a one-time solution. If TRACE parameter is added to the WAVEGUIDE statement, eigen modes are solved at each bias point as a post-processing. In such case, when WVGD.REFR is specified on the OUTPUT statement, IV log file contains effective refractive index and absorption for each optical mode.

The results show 2D plot of intensity pattern for the fundamental mode at light wavelength of 1.31 micron at zero bias. Dispersion of local refractive index is stored in laserex12_refrspec_v0.log. The IV log file contains indormation on effective refractive index and effective absorption for each transverse mode and also local refractive index at p-,i- and n-type side of the device. Time dependent simulation shows how effective refractive indexes are modulated with time and the coresponding eye diagram.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.