Emitter Push Effect

andfex07.in : Emitter Push Effect

Requires: SSuprem 4
Minimum Versions: Athena 5.22.3.R

This example demonstrates the use of the FULL.CPL model to simulate the emitter push effect on boron diffusion.

The emitter push effect is observed experimentally when a high concentration phosphorus doped emitter region is diffused within a boron doped base region. The boron profile beneath the emitter region is seen to diffuse more rapidly than the boron profile in the base region. This is the result of point defects that are coupled to the diffusing phosphorus that are swept outward into the substrate where they enhance the boron diffusion. Such effects were the driving force behind the development of the fully coupled model in Athena/SSuprem 4. This model includes terms that describe the flux of point defects based on gradients in impurity profiles.

The fully coupled model is invoked for the co-diffusion of boron and phosphorus in this example by specifying the FULL.CPL parameter on the METHOD statement. This model is the most time consuming of the Athena/SSuprem 4 diffusion models and should be used with caution. The fully coupled model, however, is the only model that can accurately simulate the emitter push effect.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.