Stanford High Dose Model

andfex06.in : Stanford High Dose Model

Requires: SSuprem 4
Minimum Versions: Athena 5.22.3.R

This example demonstrates the high dose extensions to the fully coupled diffusion model from Stanford.

This model results from the work of Scott Crowder and Peter Griffin at Stanford and represents an extended fully coupled diffusion model accounting for dopant-defect coupling, seen at high concentrations.

The model is invoked by selecting the following method flag: method high.conc.

This model extends the previous fully coupled model (full.cpl) to include extra reactions terms related to the pairing of dopant and point defect states. Further, it includes extra reactions describing coupled recombination terms in both the bulk and at the surface.

The parameter:

ivfactor controls the relative rate of PD recombination based upon vacancy-dopant pairs recombining with free interstitials with respect to straight interstitial - vacancy recombination. This parameter may be physically considered as a capture cross section ratio.

Similarly, iifactor controls the relative rate of PD recombination based upon interstitial-dopant pairs recombining with free vacancies with respect to straight interstitial - vacancy recombination. This parameter may be physically considered as a capture cross section ratio.

Also related only to the surface, Isurfact is the ratio of the surface capture cross sections of V-PI surface recombination and I-V surface recombination.

This model is thought to be significant when dealing with unclustered concentrations above 1e19 /cm^3.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.