Pelaz Experiment Simulation Using PLS Model : Pelaz Experiment Simulation Using PLS Model

Requires: SSuprem 4 with DIFSIM Module
Minimum Versions: Athena 5.21.2.R

In this experiment, a boron marker is deposited at a depth of 0.15 microns. In order to observe the boron diffusion, Pelaz has performed a silicon implant in order to generate a high interstitial concentration at the surface. Unlike the Cowern experiment, the boron concentration is high enough to allow the formation of Boron-Interstitial Clusters (BIC). Thus, this experiment exhibits a particular effect of the boron diffusion: an immobilization and de-activation of the dopant at high concentrations even under the solid solubility limit.

The boron peak has been modelled using modified implants (through moments tuning), to mimic the epitaxied marker shape. The initial interstitial profile, generated by the silicon implant is imported using the advdifex03.dat file.

To activate the new advanced diffusion model, specify PLS IC DDC in the METHOD statement before the diffusion step to take into account CNET, IC and BIC models.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.