Transient Activation Model

andfex14.in : Transient Activation Model

Requires: SSuprem 4
Minimum Versions: Athena 5.22.3.R

This example demonstrates the use of the transient activation model. This model simulates the activation of dopants after ion implantation. The model is invoked by the parameter

CLUST.TRANS in the METHOD statement.

Experiments show that only a small portion (~10-20%) of implanted atoms is activated immediately in the beginning of the annealing process. It takes some time for impurities to achieve equilibrium active concentration level which usually corresponds to solid solubility. On the atomic level this process is described as dissolution of various types of impurity-defect clusters. Phenomenologically this process can be described by a transient equation with an Arrhenius type temperature dependent time constant.

This example simulates Boron transient activation at 3 different temperatures. The implant dose of 2e14 ions/cm**2 leads to the maximum concentration below the solid solubility level. The 30 minute anneal results in incomplete activation. The "activation ratio" is calculated using EXTRACT capability of Deckbuild. The simulation results are in reasonable agreement with experimental data presented in X.-Y. Liu et.al. Appl. Phys. Lett., v.77, No.13, p.2019, 2000.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.