Indium Implant and Anneal

andfex12.in : Indium Implant and Anneal

Requires: SSuprem 4/MC IMPLANT
Minimum Versions: Athena 5.22.3.R

This example demonstrates the implantation and diffusion of Indium in Silicon. This example uses the fermi model to anneal a medium dose implant at high temperature in an inert ambient.

For implantation the monte parameter is used to activate the Monte Carlo implantation model. Monte Carlo implants will generally be more accurate than the analytical tables for non-standard species. Analytical tables for Indium do exist.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

{subsection} andfex13.in : {311}-Cluster RTA in a MOSFET

Requires: SSuprem 4
Minimum Versions: Athena 5.22.3.R

This example demonstrates the use of the {311}-Cluster TED model. This model employs a bulk injection of Point Defects from a source of as-implanted {311}-Clusters. The clusters may be thought of as a groups of interstitials that are released into the bulk during the initial diffusion cycle.

This model is applicable for medium dose situations in the 1e13 ~ 1e14 range that are typical for LDD implants.

The damage, in the form of Point Defects, {311}-Clusters and Dislocation Loops are derived from the implanted dopant profile scaled and clipped to specific dopant concentration 'bands'.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.