# (c) Silvaco Inc., 2019 go atlas mcdevice # This n-MOSFET example with quantum correction # was created by adding input associated with the quantum # correction model to the n-MOSFET example (mcdeviceex02). # Please see comments in mcdeviceex02.in for a description # of the key parameter settings. algo mode=2 carrier=e iter=2500 dt=0.1e-15 poisson tstep=2 output restart=-1 outfiles=no init=1 \ currentlogfile ="mcdeviceex03_current.log" \ currentramplogfile="mcdeviceex03_current_ramp.log" \ solstrfile ="mcdeviceex03_sol.str" \ summaryoutfile ="mcdeviceex03_summary.out" \ tstep=1000 particle n=60000 # X Mesh Lines xmesh node=1 loc=0.0000 xmesh node=76 loc=0.0225 ratio=1.00 xmesh node=243 loc=0.0725 ratio=1.00 xmesh node=318 loc=0.0950 ratio=1.00 # Y Mesh Lines ymesh node=1 loc=-0.0615 ymesh node=6 loc=-0.0015 ratio=0.4000 ymesh node=9 loc=-0.0008 ratio=0.4000 ymesh node=10 loc= 0.0000 ratio=0.8000 ymesh node=15 loc= 0.0005 ratio=1.0000 ymesh node=89 loc= 0.0800 ratio=1.0508 # Simulation Box region n=1 mat=SiO2 type=out boundp=(0.0,0.095,-0.0615,0.08) # Substrate region n=2 mat=Si type=mc boundp=(0.0,0.095,0.0,0.08) # Gate oxide region n=3 mat=SiO2 type=block boundp=(0.0,0.095,-0.0015,0.0) # Source contact region n=4 mat=Si type=contact boundp=(0.0,0.0072,0.0033,0.0135) \ name="source" # Drain contact region n=5 mat=Si type=contact boundp=(0.0878,0.095,0.0033,0.0135) \ name="drain" usefermi=1 # Poly gate region n=6 mat=Poly type=contact boundp=(0.0225,0.0725,-0.0615,-0.0015) \ name="gate" # Substrate contact region n=7 mat=Si type=contact boundp=(0.0,0.095,0.0761,0.08) \ name="substrate" # calculate current in cregions cregion boundp=(0.0285,0.0665,0.0,0.08) cregion boundp=(0.0357,0.0506,0.0,0.08) cregion boundp=(0.0447,0.0596,0.0,0.08) # use quantum correction qregion mode=schroedinger dir=y tstep=4000 xstep=1 boundp=(0.0,0.095,-0.0008,0.0026) # Regions for quantum correction schrregion n=1 mat=SiO2 boundp=(-0.0015,0.0000) schrregion n=2 mat=Si boundp=( 0.0000,0.0300) #schroedinger mesh schrmesh node=1 loc=-0.0015 schrmesh node=11 loc= 0.0000 ratio=0.84 schrmesh node=41 loc= 0.0050 ratio=1.069 schrmesh node=71 loc= 0.0300 ratio=1.043 #does nothing, set boundaries equal to device boundaries ebregion boundp=(0.0,0.095,-0.0615,0.0178) #surface scattering region #ssregion boundp=(0.0225,0.0725,-0.0008,0.0014) #Make rough = 0.0 for interface when using ssregion #matdef N=4 name="SiO2" eps=3.9 barrier=3.15 rough=0.0 ## background doping dopant=B conc=1e15 \ boundp=(0.0000,0.0950,0.0,0.0800) ## source doping dopant=As conc=2e20 \ boundp=(0.0000,0.0293,0.0, 0.0001) \ char =(0.0040,0.0040,0.0001,0.0170) ## source halo doping dopant=B conc=2.5e19 \ boundp=(0.0000,0.0293,0.0179,0.0181) \ char =(0.0182,0.0182,0.0160,0.0160) ## drain doping dopant=As conc=2e20 \ boundp=(0.0657,0.0950,0.0, 0.0001) \ char =(0.0040,0.0040,0.0001,0.0170) ## drain halo doping dopant=B conc=2.5e19 \ boundp=(0.0657,0.0950,0.0179,0.0181) \ char =(0.0182,0.0182,0.0160,0.0160) ## gate doping dopant=As conc=2e20 \ boundp=(0.0225,0.0725,-0.0615,-0.0015) # Do a single solve for vgate=vdrain=1.0 V. solve vgate=1.0 vdrain=1.0 tonyplot mcdeviceex03_current.log -set mcdeviceex03_current_log.set tonyplot mcdeviceex03_sol.str -set mcdeviceex03_sol_str.set # Do a 1-step voltage ramp from vdrain=1.0 V to vdrain=2.0 V. #solve vgate=1.0 vdrain=1.0 name="drain" vfinal=2.0 vstep=1.0 # Do a second solve at Vgate=Vdrain=2.0 V. #output currentlogfile="mcdeviceex03_current2.log" \ # solstrfile ="mcdeviceex03_sol2.str" #solve vgate=2.0 vdrain=2.0 #tonyplot mcdeviceex03_current2.log -set mcdeviceex03_current_log.set #tonyplot mcdeviceex03_sol2.str -set mcdeviceex03_sol_str.set quit
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