Charge Device Model in a Diode : Charge Device Model in a Diode

Requires: S-Pisces/Giga/MixedMode
Minimum Versions: Atlas 5.24.1.R

This simple example demonstrates transient Charge Device Model (CDM) ESD simulation in a simple 1D diode. It shows:

  • Structure formation using Atlas syntax
  • Material parameters and model set up for non-isothermal simulation
  • Transient solution generated by a discharge of a 10pF capacitor through a 5nH inductor and 1 Ohm resistor connected to the diode

The input file consists of three separate runs each starting with the statement go atlas . The first one uses the Atlas syntax to construct a 1D diode structure. The mesh, regions and electrodes are specified as coordinates in the syntax. It is compulsory to use electrode names (and not just numbers) when the structure is used in MixedMode. The doping distribution for the device is constructed from gaussian and uniform analytical functions. The final structure is saved for later use.

The second run calculates the initial operating point of the circuit. The syntax for this run is split into two parts. The first part is a SPICE-like circuit description and control cards. This part is bounded by .begin and .end . The second part is device parameter syntax. The circuit netlist is written using standard SPICE syntax.

The device parameter syntax is given after the .end statement. This sets the models, material and contact parameters for the Atlas device.

The final run uses the .tran statement. Note that a time dependent resistor is used which changes value from 1.e6 Ohm to 1500 Ohm during 1ps.

The currents and voltages for each node, and the maximum lattice temperature in the device versus time, are stored in the file specified in the .log statement.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.