3D SiGe HBT Example

hbtex07.in : 3D SiGe HBT Example

Requires: Device 3D
Minimum Versions: Atlas 5.28.1.R

This example demonstrates the use of Atlas 3D to create a hetero-junction bipolar transistor. The structure can be plotted using TonyPlot3D. The combination of a hetero-junction device with a 3D structure requires the use of Blaze 3D. The band alignment is arranged such that all the SiGe band edge discontinuity occurs at the valance band edge. To correctly model abrupt band edge discontinuities, a 10 Angstrom grid spacing is recommended at these junctions. A careful study of the grid in TonyPlot3D and in the input file will show how this stringent requirement can be met without increasing the total number of grid points to an unacceptable level in a 3D device.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.