AlGaN/GaN HEMT Id-Vgs and Id-Vds Characterization

ganfetex03.in : AlGaN/GaN HEMT Id-Vgs and Id-Vds Characterization

Requires: Blaze
Minimum Versions: Atlas 5.28.1.R

This example demonstrates Id-Vds and Id-Vgs calculations in an AlGaN/GaN HEMT.

This example demonstrates:

  • Construction of the heterojunction structure using Atlas syntax
  • Material and models parameter specification
  • Simulation of Id/Vds and Id/Vgs characteristics
  • Display of the results in TonyPlot

The device under consideration is a simple AlGaN/GaN HEMT. The main concept here is that the polarization charge is calculated using the built-in models as specified by the polarization parameter on the model statement.

After the initial solution is obtained the gate voltage is ramped to -10 V, then the IdVg characteristic is extracted from Vg=-10 to Vg=1.0 V.

A family of drain current characteristics are then simulated with and without lattice heating taken into account by ramping the drain from 0 to 15 V at various gate voltages.

Finally, the family of curves is plotted using the TonyPlot tool.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.