Normally-off AlGaN/GaN Transistor with Conductivity Modulation

ganfetex12.in : Normally-off AlGaN/GaN Transistor with Conductivity Modulation

Requires: Blaze
Minimum Versions: Atlas 5.28.1.R

The device structure in this example is based on the work from Yasuhiro Uemoto published at IEDM 2006 "A Normally-off AlGaN/GaN Transistor with Ron=2.6mOhmcm2 and BVds=640V Using Conductivity Modulation"

This example demonstrates simulation of a normally-off AlGaN/GaN transistor with conductivity modulation resulting from hole injection from a p-AlGaN gate to the AlGaN/GaN heterojunction. The p-AlGaN gate allows normally-off operation.

When the gate voltage increases and reaches the built-in pn junction voltage at the gate (around 3.5V here) hole starts to inject into the channel and generate the equal number of electrons increasing the 2DEG. Electrons with high mobility will reach the drain under the effect of the electric field whereas the hole will stay since their mobility is much lower than the electron. The current is thus modulated by the number of holes injected. It is also interesting to notice that this device exhibit a double peak in the transconductance curve a second proof of hole injection.

Electrons injection from the channel to the gate is limited by the AlGaN/GaN heterojunction. As a consequence no current offset is observed at zero drain since gate current is very low.

This device exhibit a threshold voltage around 1V, a maximum drain current at vd=10V and Vg=5V of 200mA/mm and a breakdown voltage of 640V.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.