Hot Carrier Injection and Ionisation

eprmex04.in : Hot Carrier Injection and Ionisation

Requires: SSuprem 4/DevEdit/S-Pisces
Minimum Versions: Athena 5.22.3.R, Atlas 5.28.1.R

This example is based upon exprmex01.in for the SSuprem 4/DevEdit simulations. It demonstrates

  • Concannon model for substrate current
  • Concannon model for hot carrier injection to the gate
  • Plotting of gate current as a function of position on the gate

In practice, hot electron injection is normally analysed by measuring the gate current that is injected onto the floating gate contact. The Atlas input file was therefore created to simulate both the floating gate and substrate currrents. To, do this the electrode fgate was not specified as floating.

The Concannon model for substrate current is implemented on the impact statement with the parameters n.concannon p.concannon to turn on the individual electron and hole components. The Concannon model for hot carrier injection is implemented on the models statement with the parameters n.concannon p.concannon for the individual components. Both of these models are based upon the carrier energies and therefore will automatically implement the electron and hole energy balance equations.

This example finishes by saving a solution and plotting the structure and the injected current as a function of position across the polsilicon gate - oxide interface.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.