Doping Dependent Oxidation Rate

anoxex03.in : Doping Dependent Oxidation Rate

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example shows the effect of dopant in silicon on oxidation rate. High levels of phosphorus (>1e20) accelerate the oxidation rate on the substrate.

No special model commands are required to activate dopant dependent oxidation. The parameter grid.ox controls the gridding in the grown oxide.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.