Polymer Devices

Contents

  • Summary of talk
  • Basic polymer (P3HT) properties
  • The market sphere
  • Large area electronics
  • Comparison of technologies (MOS)
  • Comparison of technologies
  • Polymer technology
  • Polymer conduction processes?
  • Methods of doping: replacing ion implantation
  • Key role of dopants:
    • Air / voltage / light / dopant / instability
    • Current through gate oxide (AI2O3) demonstrated with high dopant content
    • Mechanism?
    • Capacitance voltage (CV plots for P3HT MOSC
    • Importance of Cmin
    • Other parameters from CV plots on polymers
    • Revision of properties
    • Effects of mobile dopant on devices (e.g. TFTs)
    • Polymer Schottky diodes
    • Reverse biased polymer Schottky diode
    • I-V characteristics of P3HT Schottky diodes
    • Measuring mobility by Liverpool method
    • Mobility dependancy on doping intensity
    • Basic relationships
  • Polymer LEDs:
    • Preferred materials for PLEDs
    • Single layer diode
    • Double layer diode
    • Light emission: simple picture
    • Additional factors
    • PLED failure due to dopant instability
  • Polymer TFTs/PFETs:
    • Detailed consideration of device (c)
    • Preferred materials
    • Modification of Poole - Frenkel concepts
  • Circuits
    • Schottky sources
    • Schottky sources: P3HT with SiO2 gate dielectric
    • A vertical device
  • European picture:
    • European interests (confirmed
    • European activities
    • CBE consortium (UK)
    • Other countries with or planning a consortium
  • Conclusion

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