Volume 26, Number 3, July - August - September 2016

Using Victory Process to Create Realistic Structures for Capacitance Extraction in Clever

Silvaco offers many alternatives for creating simple 3D structures, the optimum choice depending on what the user needs to simulate.  Many of the choices for creating simple 3D structures are for user convenience, so that just a single tool can both create the simple 3D structure and simulate the required physics. This gives the user an enhanced feeling of a tightly integrated product.


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Simulation of Device Degradation Due to Bias Temperature Stress

Bias Temperature Instability (BTI) [1] ranks among the most serious reliability issues in present-day semiconductor devices. In pMOSFETs, for instance, it is observed when large negative biases are applied to the gate at elevated temperatures.


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Hints, Tips and Solutions

Q. How to examine the scattering mechanisms that are contributing to the reduced channel mobility in 4H-SiC MOSFETs?

In a MOSFET structure, silicon carbide, 4H-SiC in particular, is known to exhibit lower channel mobility than Si, mainly due to Coulomb scattering at trapped charge at the SiO2/4H-SiC...

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Hints, Tips and Solutions

Q. How to better visualize vectors and field lines in TonyPlot?

Traditionally, visualizing vectors by means of arrows in TonyPlot was a challenge, especially in the areas where the computational grid was dense. The vector arrows were plotted for every grid point, making...

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