# JFET/MESFET TRIQUINT Models (Level=5 and level=7)

Introduction

Until now, * SmartSpice* has supported the
TriQuint model designated TOM using the Level=5 model parameter.

*now supports the TriQuint-2 MESFET model designated TOM-2. This model is accessible as a standard MESFET model, using the Level=7 model parameter. It is an incremental improvement based on TriQuint?s original MESFET model. All current analyses are currently supported (dc, ac, transient and noise).*

**SmartSpice**

Physical Effects

Refinements to improve accuracy in the knee and subthreshold region have
been added. Particular attention has been given to temperature effects.
TOM-2 retains the desirable features of TOM-1 while improving performance
in the subthreshold characteristics near the cut-off and knee regions.
Additional temperature coefficients are included relating to the drain
current and major deficiencies in the behavior of the capacitance as a
function of temperature have been corrected.

Simulation Model

The parameters of the TOM-2 MESFET model are represented in Table 1.

Parameter | Description | Units | Default | Area |
---|---|---|---|---|

BETA | Transconductance parameter | A/V2 | 0.1 | ( W e f f / Leff). M |

VTO | Quadratic equation gate threshold voltage | V | -2.5 | |

VTO | Quadratic equation gate threshold voltage | V | -2.5 | |

ALPHA | Coefficient of vds | 1/V | 2.0 | |

GAMMA (GAMDS) | Static feedback parameter | |
0 | |

DELTA | Output feedback parameter | 1/(A.V) | 0.2 | |

Q (VGEXP) | Power law parameter | |
2.0 | |

VBI | Gate diode built-in potential | V | 1.0 | |

VMAX | Gate diode capacitance limiting voltage | V | 0.95 | |

LAMBDA | Channel length modulation parameter | 1/V | 0 | |

K1 | Bulk bias sensitivity for thresh-old voltage | |
0 | |

VBITC | Temperature coefficient for VBI | 1/K | 0 | |

ALPHATCE | Temperature coefficient for ALPHA | 1/K | 0 | |

GAMMATC | Temperature coefficient for GAMMA | 1/K | 0 | |

Table 1. Parameters of the TOM-2 TriQuint MESFET model.

The model parameters BETA, VTO, ALPHA, GAMMA, DELTA, Q are common for both the original and improved TriQuint models. An important aspect of modeling the MESFET is a correct description of the behavior as a function of temperature.

Figure 1. Ids versus Vds for different Vgs voltages.

The basic equations including the current source equations and the capacitance equations can be found in [1]. The essentials of the subthreshold model are described in [2] where the formulae are used to describe the CMOS subthreshold behavior.

Figure 2. Ids versus Vgs for Vds=1V for different temperatures.

DC Results

Tests have been performed for a variety of temperatures and device widths to check proper scaling and temperature dependencies. Drain-source current Ids, gate-drain and gate-source capacitances respectively Cgd and Cgs (CAPMOD and CAPDC=1) are represented versus bias for the depletion mode. A comparison between TOM-1 and TOM-2 dc characteristics (Ids-Vds) are plotted in Figure 1. The drain current is plotted versus Vgs for different temperatures in Figure 2.

Figure 3. Cgs versus Vds for different Vgs.

Improved accuracy in the knee region is observed in the TOM-2 model characteristic. Similar results can be found in reference [3].

Figure 4. Cgd versus Vds for different Vgs..

Reference

Modeling Manual Volume 2.**SmartSpice/UTMOST**- M. Godfrey "CMOS device modeling for subthreshold circuits" IEEE Transactions on Circuits and Systems II : Analog and Digital Signal Processing, 39(8), August 1992.
- N. SCHEINBERG, R. BAYRUNS, P. WALLACE "An accurate MESFET Model for linear and microwave circuit design" IEEE Journal of Solid-State Circuits, vol. 24, n. 2, April 1989.