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BSIM3SOI Version 2.1 (FD, DD and PD)
Models Released in SmartSpice

Introduction

The Berkeley BSIM3SOI version 2.1 models, released in September 1999, have been implemented in SmartSpice. The three new models are selected according to LEVEL selector.

  • LEVEL = 26 selects the BSIM3SOI2FD (Fully depleted) model

  • LEVEL = 27 selects the BSIM3SOI2DD (Dynamic depletion) model

  • LEVEL = 29 selects the BSIM3SOI2PD (Partially depleted) model

The SmartSpice implementation of the three models is close but not identical to the UC Berkeley releases. The SmartSpice implementation provides a number of improvements and additional parameters currently unsupported in Berkeley's BSIM3SOIv2 models.

In the SmartSpice implementation of the BSIM3SOIv2 models, enhanced convergence is obtained by properly handling the GMIN and DCGMIN control options during transient and DC analysis.

The GMIN option connects a conductance in parallel with the bulk diodes. This conductance is very useful when the diode model has a very high off-resistance. The conductance DCGMIN is connected between drain and source.

The present section provides all the information needed to understand and use the three models.

 

BSIM3SOI FD (Fully Depleted) version 2.1 (Model LEVEL = 26)

Major Features
BSIM3SOI FD v2.1 is a suite of BSIM3SOI FD v2.0 released in February 1999. The version 2.0 is a derivative of BSIM3SOI v1.3 (level=25 in SmartSpice). BSIM3SOIFDv2.0 has improved simulation efficiency and noise modeling. The basic IV for this model is modified from BSIM3v3.1 equation set. The major features are summarized as follows [1]:

  • Supports external body bias and backgate bias : a total of 5 external nodes;
  • Self-heating implementation improved over the alpha version of Berkeley (LEVEL 23 in SmartSpice);
  • New depletion charge model (EBCI) introduced for better accuracy in capacitive coupling prediction. An improved BSIM3v3 based model is added as well;
  • Single I-V expression as in BSIM3v3.1 to guarantee continuities of Ids, Gm, and Gds and their derivatives for all bias conditions.

New version BSIM3SOI FDv2.1 includes the binning feature to enhance the model flexibility and fixes some bugs found in the previous version 2.0.

 

Model Parameters
The additional parameters to BSIM3v3 listed in Table 1 correspond to the BSIM3SOI FD Version 2.1 model.


Parameter Description Units Default
SHMOD Flag for self-heating
0 - no self-heating
1 - self-heating
-
0
TSI Silicon film thickness
 m
1e-7
TBOX Buried oxide thickness
 m
3e-7
VBSA Transition body voltage offset
 V
0
DELP Constant for limiting Vbseff to Phis
 V
0.02
KB1 Coefficient of Vbs0 dependency on Ves
 -
1
KB3 Coefficient of Vbs0 dependency on Vgs at subthreshold region
  -
1
DVBD0 First coefficient of Vbs0 dependency on Leff
 V
0
DVBD1 Second coefficient of Vbs0 dependency on Leff
 V
0
MXC Fitting parameter for Abeff calculation
 -
-0.9
ADICE0 DICE bulk charge factor
1
ISDIF Body to source/drain injection saturation current
A/m2
0.0
ISREC Recombination in depletion saturation current
A/m2
1e-5
RBODY Intrinsic body contact sheet resistance
 
0
RBSH Extrinsic body contact sheet resistance
/m2
0
CGE0 Gate substrate overlap capacitance per unit channel length
 F/m
0.0
VSDFB Source/drain bottom diffusion capacitance flatband voltage
 V
calculated
VSDTH Source/drain bottom diffusion capacitance threshold voltage
 V
calculated
CSDMIN Source/drain bottom diffusion minimum capacitance
 F
calculated
ASD Source/drain bottom diffusion minimum parameter
  -
0.3
CSDESW Source/drain sidewall fringing capacitance per unit length
 F/m
0
CTH0 Normalized thermal capacity
m.°C/(W*s)
0
RTH0 RTH0 Normalized thermal resistance
 m.°C/W
0

Table 1. The additional parameters to BSIM3v3 that
correspond to the BSIM3SOI FD Version 2.1 model.

 

 

Silvaco Improvements
Options

The options VZERO and EXPERT are supported in the SmartSpice BSIM3SOI FD v2.1 model. The option VZERO=2 allows faster runtime when large circuits are used.

The EXPERT option can be specified to detect possible problems in models, before and during simulation, such as:

  • negative conductances GM, GDS and GMBS,
  • negative gate capacitances.


New Model Parameters
New model parameters are listed in the following table :

Parameter Description Units Default
VERSION Version selector - 2.1
LMIN Limit for binning m 0.0
LMAX Limit for binning m 1.0
WMIN Limit for binning m 0.0
WMAX Limit for binning m 1.0


The VERSION model parameter is used to switch between the current versions 2.0 and 2.1. The four others new model parameters are used for binning to select a model. For the binning, Silvaco has also added new binned model parameters that are displayed in Table 2.

AT GAMMA1 GAMMA2 VBM VBX XT KT1
KT1L KT2 UA1 UB1 UC1 UTE RTH0
PRT CGDL CGSL CKAPPA CF CLC CLE
XJ RBODY CSDMIN CTH0 ASD CSDESW  

Table 2. Silvaco's new binned model parameters.

 

BSIM3SOI DD (Dynamic Depletion) Version 2.1 Model (LEVEL=27)

Major Features
BSIM3SOI DD v2.1 is a suite of BSIM3SOI DD v2.0 released in February 1999. The version 2.0 is a derivative of BSIM3SOI v1.3 (level=25 in SmartSpice). BSIM3SOI DD v2.0 has improved simulation efficiency and noise modeling. The BSIM3SOI DDv2.0 model can be used for both Partially Depleted (PD) and Fully Depleted (FD). The basic IV for this model is modified from BSIM3v3.1 equation set. The major features are summarized as follows [2]:

  • Dynamic depletion approach is applied on both I-V and C-V. Charge and drain current are scalable with Tbox and Tsi continuously

  • Supports external body bias and backgate bias : a total of 5 external nodes
  • Real floating body simulation in both I-V and C-V. Body potential is properly bounded by diode and C-V formulation
  • Self-heating implementation improved over the alpha version of Berkeley (LEVEL 23 in SmartSpice)
  • An improved impact ionization current model
  • Various diode leakage components and parasitic bipolar current included
  • New depletion charge model (EBCI) introduced for better accuracy in capacitive coupling prediction. An improved BSIM3v3 based model is added as well
  • Dynamic depletion can suit different requirements for SOI technologies
  • Single I-V expression as in BSIM3v3.1 to guarantee continuities of Ids, Gm, and Gds and their derivatives for all bias conditions


New version BSIM3SOI DDv2.1 includes the binning feature to enhance the model flexibility and fixes some bugs found in the previous version 2.0.


Model Parameters
The additional parameters to BSIM3v3 listed below in Table 3 correspond to the BSIM3SOI DD Version 2.1 model.

Parameter Description Units Default
SHMOD Flag for self-heating
0 - no self-heating
1 - self-heating
-
0
TSI Silicon film thickness
m
1e-7
TBOX Buried oxide thickness
m
3e-7
VBSA Transition body voltage offset
V
0
DELP Constant for limiting Vbseff to Phis
V
0.02
KB1 Coefficient of Vbs0 dependency on Ves
-
1
KB3 Coefficient of Vbs0 dependency on Vgs at subthreshold region
-
1
DVBD0 First coefficient of Vbs0 dependency on Leff
V
0
DVBD1 Second coefficient of Vbs0 dependency on Leff
V
0
ABP Coefficient of Abeff dependency on Vgst
-
1
MXC Fitting parameter for Abeff calculation
-
-0.9
ADICE0 DICE bulk charge factor
-
1
ALPHA1 The second parameter of impact ionization current
m/V
1.0
AII First Vds dependence Ecrit parameter
-
0
BII Second Vds dependence Ecrit parameter
m
0
CII Vgsteff dependence Ecrit parameter
1/m
0
DII Vbseff dependence Ecrit parameter
1/m
-1.0
AGIDL GIDL constant
W-1
0
BGIDL GIDL exponential coefficient
V/m
0
NGIDL GIDL Vds enhancement coefficent
V
1.2
NTUN reverse tunneling non-ideality factor
-
10.0
NDIODE Diode non-ideality factor
-
1.0
ISBJT BJT injection saturation current
A/m2
1e-6
ISDIF Body to source/drain injection saturation current
A/m2
0.0
ISREC Recombination in depletion saturation current
A/m2
1e-5
ISTUN Reverse tunneling saturation current
A/m2
0
EDL Electron diffusion length
m
2e-6
KBJT1 Parasitic bipolar early effect coefficient
m/V
0
RBODY Intrinsic body contact sheet resistance
/m2
0
RBSH Extrinsic body contact sheet resistance
/m2
0
CGE0 Gate substrate overlap capacitance per unit channel length
F/m
0.0
TT Diffusion capacitance transit time coefficient
s
1e-12
VSDFB Source/drain bottom diffusion capacitance flatband voltage
V
calculated
VSDTH Source/drain bottom diffusion capacitance threshold voltage
V
calculated
CSDMIN Source/drain bottom diffusion minimum capacitance
F
calculated
ASD Source/drain bottom diffusion minimum parameter
-
0.3
CSDESW Source/drain sidewall fringing capacitance per unit length
F/m
0
CTH0 Normalized thermal capacity
m.°C / (W*sec)
0
RTH0 Normalized thermal resistance
m.°C/W
0
XBJT Power dependence of jbjt on temperature
-
2
XDIF Power dependence of jdif on temperature
-
2
XREC Power dependence of jrec on temperature
-
20
XTUN Power dependence of jtun on temperature
-
0
NOIF Floating body excess noise ideality factor
-
1.0

Table 3. The additional parameters to BSIM3v3 correspond
to the BSIM3SOI DD Version 2.1 model.



Silvaco Improvements
Options

The options VZERO and EXPERT are supported in the SmartSpice BSIM3SOI DD v2.1 model.

The option VZERO=2 allows faster runtime when large circuits are used.

The EXPERT option can be specified to detect possible problems in models, before and during simulation, such as:
  • negative conductances GM, GDS and GMBS

  • negative gate capacitances

New Model Parameters
New model parameters are listed in the following table :
Parameter Description Units Default
VERSION Version selector - 2.1
SMART Improvement selector - 1
LMIN Limit for binning m 0.0
LMAX Limit for binning m 1.0
WMIN Limit for binning m 0.0
WMAX Limit for binning m 1.0

The VERSION model parameter is used to switch between the current version 2.0 and 2.1. The four new model parameters (LMIN, LMAX, WMIN and WMAX) are used for binning to select a model. For the binning, Silvaco has also added the following new binned model parameters shown in Table 4.

The SMART model parameter Silvaco improvements which are not compatible with original Berkeley model allows to switch on . SMART model parameter has been created as follows :
  • if SMART = 0: the original Berkeley model is used with its different versions


  • if SMART > 0: the Berkeley model is used with the following improvements:
    • problem with RBODY model parameter has been fixed;
    • some derivatives related to body tied have been corrected;
    • the limitation of vb has been modified.


BSIM3SOI PD (Partially depleted) version

AT GAMMA1 GAMMA2 VBM VBX XT KT1
KT1L KT2 UA1 UB1 UC1 UTE RTH0
PRT CGDL CGSL CKAPPA CF CLC CLE
XJ RBODY CSDMIN CTH0 ASD CSDESW CJSWG
PBSWG MJSWG TT XBJT XDIF XREC XTUN

Table 4. Silvaco's new binned model parameters.



2.1 Model (LEVEL = 29)
Major Features

BSIM3SOI PD v2.1 is a suite of BSIM3SOI PD v2.01 released in April 1999. The version 2.01 is a derivative of BSIM3SOI v1.3 (level=25 in Smartspice). Many enhanced features are included in BSIM3SOI PD v2.0.1. BSIM3SOI PD v2.0.1 has the following new features relative to BSIM3SOIv1.3 [3]:

  • Real floating body simulation in both C-V and I-V. The body potential is determined by the balance of all the body current components
  • Enhancements in the threshold voltage and bulk charge formulation of the high positive body bias regime
  • An improved parasitic bipolar current model. This includes enhancements in the various diode leakage components, second order effects (high-level injection & early effect), diffusion charge equation and temperature dependence of the diode junction capacitance
  • An improved impact ionization current model. The contribution from BJT current is also modeled by the parameter FBJTII
  • Instance parameters (PDBCP, PSBCP, AGBCP, AEBCP, NBC) are provided to model the parasitics of devices with various body-contact and isolation structures
  • An external body node (the 6th node) and other improvements are introduced to facilitate the modeling of distributed body-resistance
  • Self-heating: an external temperature node (the 7th node) is supported to facilitate the simulation of thermal coupling among neighboring devices
  • A unique SOI low frequency noise model, including a new excess noise resulting from the floating body effect
  • Width dependence of the body effect is modeled by parameters (K1, K1W1, K1W2)
  • Improved history dependence of the body charges with two new parameters (FBODY, DLCB)
  • An instance parameter vbsusr is provided for users to set the transient initial condition of the body potential
The new-charge thickness capacitance model introduced in BSIM3v3.2, CAPMOD3, is included. New version BSIM3SOI PD v2.1 includes the binning feature to enhance the model flexibility and fixes some bugs found in the previous version 2.0.1.


Model Parameters
The additional parameters to BSIM3v3 listed in Table 5 correspond to the BSIM3SOI PD Version 2.1 model.

Parameter Description Units Default
SHMOD

Flag for self-heating
0 - no self-heating
1 - self-heating

-
0
TSI Silicon film thickness
m
1e-7
TBOX Buried oxide thickness
m
3e-7
KIW1 First body effect with dependent parameter
m
0
KIW2 Second body effect with dependent parameter
m
0
KB1 Coefficient of Vbs0 dependency on Ves
-
1
KETAS Surface potential adjustment for bulk charge effect
V
0
DWBC Width offset for body contact isolation edge
m
0.0
FBJTII Fraction of bipolar current affecting the impact ionization
m/V
0.0
BETA0 First Vds dependence parameter of impact ionization cur-rent
1/V
0
BETA1 Second Vds dependence parameter of impact ionization current
1/V
0
BETA2 Third Vds dependence parameter of impact ionization current
V
0.1
VDSATII0 Nominal drain saturation voltage at threshold for impact ionization current
V
0.9
TII Temperature dependent parameter for impact ionization current
-
0
LII Channel length dependent parameter at threshold for impact ionization current
-
0
ESATII Saturation channel electric field for impact ionization cur-rent
V/m
1e7
SII0 First vgs dependent parameter for impact ionization cur-rent
1/V
0.5
SII1 Second vgs dependent parameter for impact ionization current
1/V
0.1
SII2 Third vgs dependent parameter for impact ionization cur-rent
1/V
0
SIID vds dependent parameter of drain saturation voltage for impact ionization current
1/V
0
AGIDL DIDL constant W-1
0
BGIDL GIDL exponential coefficient V/m
0
NGIDL GIDL Vds enhancement coefficent V
1.2
NTUN reverse tunneling non-ideality factor -
10.0
NDIODE Diode non-ideality factor -
1.0
NRECF0 Recombination non-ideality factor at forward bias -
2.0
NRECR0 Recombination non-ideality factor at reversed bias -
10.0
ISBJT BJT injection saturation current A/m2
1e-6
ISDIF Body to source/drain injection saturation current A/m2
0
ISREC Recombination in depletion saturation current A/m2
1e-5
ISTUN Reverse tunneling saturation current A/m2
0
LN Electron/hole diffusion length m
2e-6
VREC0 Voltage dependent parameter for recombination current V
0
VTUN0 Voltage dependent parameter for tunneling current V
0
NBJT Power coefficient of channel length dependency for bipolar current -
1
LBJT0 Reference channel length for bipolar current m
0.2 e-6
VABJT Early voltage for bipolar current V
10
AELY Channel length dependency of early voltage bipolar current V/m
0
AHLI High level injection parameter for bipolar current -
0
RBODY Intrinsic body contact sheet resistance W/m2
0
RBSH Extrinsic body contact sheet resistance W/m2 0 W/m2
0
TT Diffusion capacitance transit time coefficient s
1e-12
NDIF Power coefficient of channel length dependency for diffusion capacitance -
-1
LDIF0 Channel length dependency coefficient of diffusion capacitance -
1
VSDFB Source/drain bottom diffusion capacitance flatband voltage V
calculated
VSDTH Source/drain bottom diffusion capacitance threshold voltage V
calculated
CSDMIN Source/drain bottom diffusion minimum capacitance -
calculated
ASD Source/drain bottom diffusion minimum parameter -
0.3
CSDESW Source/drain sidewall fringing capacitance per unit length F/m
0
DLCB Length offset fitting parameter for body charge m
0.0
DLBG Length offset fitting parameter for backgate charge m
0.0
DELVT Threshold voltage adjust for C-V V
0.0
FBODY Scaling factor for body charge -
1.0
ACDE Exponetial coefficient for charge thickness in CAPMOD=3 for accumulation and depletion regions m/V
1.0
MOIN Coefficient for the gate-bias dependent surface potential V0.5
15.0
TCJSWG Temperature coefficient of CJSWG 1/K 0 1/K
0
TPBSWG Temperature coefficient of PBSWG V/K
0
CTH0 Normalized thermal capacity m.°C / (W*sec)
0
RTH0 Normalized thermal resistance m.°C/W
0
NTRECF Temperature coefficient for NRECF -
0
NTRECR Temperature coefficient for NRECR -
0
XBJT Power dependence of jbjt on temperature -
1
XDIF Power dependence of jdif on temperature -
XBJT
XREC Power dependence of jrec on temperature -
1
XTUN Power dependence of jtun on temperature -
0


Table 5. The additional parameters to BSIM3v3 correspond
to the BSIM3SOI PD Version 2.1 model.

 

Silvaco Improvements
Options

The options VZERO and EXPERT are supported in the SmartSpice BSIM3SOI PD v2.1 model.

The option VZERO=2 allows faster runtime when large circuits are used.

The EXPERT option can be specified to detect possible problems in models, before and during simulation, such as:

  • negative conductances GM, GDS and GMBS
  • negative gate capacitances.


New model parameters
New model parameters are listed in the following table:

Parameter Description Units Default
VERSION Version selector - 2.1
SMART Improvement selector - 1
LMIN Limit for binning m 0.0
LMAX Limit for binning m 1.0
WMIN Limit for binning m 0.0
WMAX Limit for binning m 1.0


The VERSION model parameter is used to switch between the current versions 2.0.1 and 2.1. The four new model parameters (LMIN, LMAX, WMIN and WMAX) are used for binning to select a model. For the binning, Silvaco has also added the following new binned model parameters shown in Table 6.

AT GAMMA1 GAMMA2 VBM VBX XT KT1
KT1L KT2 UA1 UB1 UC1 UTE RTH0
PRT CGDL CGSL CKAPPA CF CLC CLE
XJ RBODY CSDMIN CTH0 ASD CSDESW CJSWG
PBSWG MJSWG TT XBJT XDIF XREC XTUN
LN NDIF LDIF0 TCJSWG TPBSWG NTRECF NTRECR

Table 6. Silvaco's new binned model parameters.



The SMART model parameter allows to switch on Silvaco improvements which are not compatible with original Berkeley model. The SMART model parameter has been created as follows :

  • if SMART = 0: the original Berkeley model is used with its different versions
  • if SMART > 0: the Berkeley model is used with the following improvements:
    • incorrect implementation of model parameter AHLI has been fixed;
    • the limitation of vb has been modified.


Figures 1, 2, 3 and 4 illustrate different models.




Figure 1 : Example of Id-Vds curves with FD and DD models
(default model card from Berkeley)





Figure 2 : Example of Id-Vds curves with PD
model (default model card from Berkeley)





Figure 3. Self-heating effect with PD model
(default model card from Berkeley)








Figure 4. Example of a ring oscillator with PD
model (default model card from Berkeley)




References
  1. BSIM3SOIFDv2.1 User's Manual, 1999, Department of EECS, University of California, Berkeley

  2. BSIM3SOIDDv2.1 User's Manual, 1999, Department of EECS, University of California, Berkeley

  3. BSIM3SOIPDv2.1 User's Manual, 1999, Department of EECS, University of California, Berkeley

 

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