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BSIM3SOI Version 2.1 (FD, DD and PD)

Parameter  Description  Units  Default 
SHMOD  Flag for selfheating 0  no selfheating 1  selfheating 
 
0 
TSI  Silicon film thickness  m 
1e7 
TBOX  Buried oxide thickness  m 
3e7 
VBSA  Transition body voltage offset  V 
0 
DELP  Constant for limiting Vbseff to Phis  V 
0.02 
KB1  Coefficient of Vbs0 dependency on Ves   
1 
KB3  Coefficient of Vbs0 dependency on Vgs at subthreshold region   
1 
DVBD0  First coefficient of Vbs0 dependency on Leff  V 
0 
DVBD1  Second coefficient of Vbs0 dependency on Leff  V 
0 
MXC  Fitting parameter for Abeff calculation   
0.9 
ADICE0  DICE bulk charge factor   
1 
ISDIF  Body to source/drain injection saturation current  A/m^{2} 
0.0 
ISREC  Recombination in depletion saturation current  A/m^{2} 
1e5 
RBODY  Intrinsic body contact sheet resistance  0 

RBSH  Extrinsic body contact sheet resistance  /m^{2} 
0 
CGE0  Gate substrate overlap capacitance per unit channel length  F/m 
0.0 
VSDFB  Source/drain bottom diffusion capacitance flatband voltage  V 
calculated 
VSDTH  Source/drain bottom diffusion capacitance threshold voltage  V 
calculated 
CSDMIN  Source/drain bottom diffusion minimum capacitance  F 
calculated 
ASD  Source/drain bottom diffusion minimum parameter   
0.3 
CSDESW  Source/drain sidewall fringing capacitance per unit length  F/m 
0 
CTH0  Normalized thermal capacity  m.°C/(W*s) 
0 
RTH0  RTH0 Normalized thermal resistance  m.°C/W 
0 
Silvaco Improvements
Options
The options VZERO and EXPERT are supported in the
SmartSpice BSIM3SOI FD v2.1 model. The option VZERO=2
allows faster runtime when large circuits are used.
The EXPERT option can be specified to detect possible problems in models, before and during simulation, such as:
New Model Parameters
New model parameters are listed in the following table :
Parameter  Description  Units  Default 
VERSION  Version selector    2.1 
LMIN  Limit for binning  m  0.0 
LMAX  Limit for binning  m  1.0 
WMIN  Limit for binning  m  0.0 
WMAX  Limit for binning  m  1.0 
The VERSION model parameter is used to switch between the current
versions 2.0 and 2.1. The four others new model parameters are used
for binning to select a model. For the binning, Silvaco has also
added new binned model parameters that are displayed in Table 2.
AT  GAMMA1  GAMMA2  VBM  VBX  XT  KT1 
KT1L  KT2  UA1  UB1  UC1  UTE  RTH0 
PRT  CGDL  CGSL  CKAPPA  CF  CLC  CLE 
XJ  RBODY  CSDMIN  CTH0  ASD  CSDESW 
Table 2. Silvaco's new binned
model parameters.
BSIM3SOI DD (Dynamic Depletion) Version 2.1 Model (LEVEL=27)
Major Features
BSIM3SOI DD v2.1 is a suite of BSIM3SOI DD v2.0 released in February
1999. The version 2.0 is a derivative of BSIM3SOI v1.3 (level=25
in SmartSpice). BSIM3SOI DD v2.0 has improved simulation
efficiency and noise modeling. The BSIM3SOI DDv2.0 model can be
used for both Partially Depleted (PD) and Fully Depleted (FD). The
basic IV for this model is modified from BSIM3v3.1 equation set.
The major features are summarized as follows [2]:
New version BSIM3SOI DDv2.1 includes the binning feature to enhance
the model flexibility and fixes some bugs found in the previous
version 2.0.
Model Parameters
The additional parameters to BSIM3v3 listed below in Table 3 correspond
to the BSIM3SOI DD Version 2.1 model.
Parameter  Description  Units  Default 
SHMOD  Flag for selfheating 0  no selfheating 1  selfheating 
 
0 
TSI  Silicon film thickness  m 
1e7 
TBOX  Buried oxide thickness  m 
3e7 
VBSA  Transition body voltage offset  V 
0 
DELP  Constant for limiting Vbseff to Phis  V 
0.02 
KB1  Coefficient of Vbs0 dependency on Ves   
1 
KB3  Coefficient of Vbs0 dependency on Vgs at subthreshold region   
1 
DVBD0  First coefficient of Vbs0 dependency on Leff  V 
0 
DVBD1  Second coefficient of Vbs0 dependency on Leff  V 
0 
ABP  Coefficient of Abeff dependency on Vgst   
1 
MXC  Fitting parameter for Abeff calculation   
0.9 
ADICE0  DICE bulk charge factor   
1 
ALPHA1  The second parameter of impact ionization current  m/V 
1.0 
AII  First Vds dependence Ecrit parameter   
0 
BII  Second Vds dependence Ecrit parameter  m 
0 
CII  Vgsteff dependence Ecrit parameter  1/m 
0 
DII  Vbseff dependence Ecrit parameter  1/m 
1.0 
AGIDL  GIDL constant  W1 
0 
BGIDL  GIDL exponential coefficient  V/m 
0 
NGIDL  GIDL Vds enhancement coefficent  V 
1.2 
NTUN  reverse tunneling nonideality factor   
10.0 
NDIODE  Diode nonideality factor   
1.0 
ISBJT  BJT injection saturation current  A/m^{2} 
1e6 
ISDIF  Body to source/drain injection saturation current  A/m^{2} 
0.0 
ISREC  Recombination in depletion saturation current  A/m^{2} 
1e5 
ISTUN  Reverse tunneling saturation current  A/m^{2} 
0 
EDL  Electron diffusion length  m 
2e6 
KBJT1  Parasitic bipolar early effect coefficient  m/V 
0 
RBODY  Intrinsic body contact sheet resistance  /m^{2} 
0 
RBSH  Extrinsic body contact sheet resistance  /m^{2} 
0 
CGE0  Gate substrate overlap capacitance per unit channel length  F/m 
0.0 
TT  Diffusion capacitance transit time coefficient  s 
1e12 
VSDFB  Source/drain bottom diffusion capacitance flatband voltage  V 
calculated 
VSDTH  Source/drain bottom diffusion capacitance threshold voltage  V 
calculated 
CSDMIN  Source/drain bottom diffusion minimum capacitance  F 
calculated 
ASD  Source/drain bottom diffusion minimum parameter   
0.3 
CSDESW  Source/drain sidewall fringing capacitance per unit length  F/m 
0 
CTH0  Normalized thermal capacity  m.°C / (W*sec) 
0 
RTH0  Normalized thermal resistance  m.°C/W 
0 
XBJT  Power dependence of jbjt on temperature   
2 
XDIF  Power dependence of jdif on temperature   
2 
XREC  Power dependence of jrec on temperature   
20 
XTUN  Power dependence of jtun on temperature   
0 
NOIF  Floating body excess noise ideality factor   
1.0 
Parameter  Description  Units  Default 
VERSION  Version selector    2.1 
SMART  Improvement selector    1 
LMIN  Limit for binning  m  0.0 
LMAX  Limit for binning  m  1.0 
WMIN  Limit for binning  m  0.0 
WMAX  Limit for binning  m  1.0 
AT  GAMMA1  GAMMA2  VBM  VBX  XT  KT1 
KT1L  KT2  UA1  UB1  UC1  UTE  RTH0 
PRT  CGDL  CGSL  CKAPPA  CF  CLC  CLE 
XJ  RBODY  CSDMIN  CTH0  ASD  CSDESW  CJSWG 
PBSWG  MJSWG  TT  XBJT  XDIF  XREC  XTUN 
2.1 Model (LEVEL = 29)
Major Features
BSIM3SOI PD v2.1 is a suite of BSIM3SOI PD v2.01 released in April
1999. The version 2.01 is a derivative of BSIM3SOI v1.3 (level=25
in Smartspice). Many enhanced features are included in BSIM3SOI
PD v2.0.1. BSIM3SOI PD v2.0.1 has the following new features relative
to BSIM3SOIv1.3 [3]:
Parameter  Description  Units  Default 
SHMOD  Flag for selfheating 
 
0 
TSI  Silicon film thickness  m 
1e7 
TBOX  Buried oxide thickness  m 
3e7 
KIW1  First body effect with dependent parameter  m 
0 
KIW2  Second body effect with dependent parameter  m 
0 
KB1  Coefficient of Vbs0 dependency on Ves   
1 
KETAS  Surface potential adjustment for bulk charge effect  V 
0 
DWBC  Width offset for body contact isolation edge  m 
0.0 
FBJTII  Fraction of bipolar current affecting the impact ionization  m/V 
0.0 
BETA0  First Vds dependence parameter of impact ionization current  1/V 
0 
BETA1  Second Vds dependence parameter of impact ionization current  1/V 
0 
BETA2  Third Vds dependence parameter of impact ionization current  V 
0.1 
VDSATII0  Nominal drain saturation voltage at threshold for impact ionization current  V 
0.9 
TII  Temperature dependent parameter for impact ionization current   
0 
LII  Channel length dependent parameter at threshold for impact ionization current   
0 
ESATII  Saturation channel electric field for impact ionization current  V/m 
1e7 
SII0  First vgs dependent parameter for impact ionization current  1/V 
0.5 
SII1  Second vgs dependent parameter for impact ionization current  1/V 
0.1 
SII2  Third vgs dependent parameter for impact ionization current  1/V 
0 
SIID  vds dependent parameter of drain saturation voltage for impact ionization current  1/V 
0 
AGIDL  DIDL constant  W1  0 
BGIDL  GIDL exponential coefficient  V/m  0 
NGIDL  GIDL Vds enhancement coefficent  V  1.2 
NTUN  reverse tunneling nonideality factor    10.0 
NDIODE  Diode nonideality factor    1.0 
NRECF0  Recombination nonideality factor at forward bias    2.0 
NRECR0  Recombination nonideality factor at reversed bias    10.0 
ISBJT  BJT injection saturation current  A/m^{2}  1e6 
ISDIF  Body to source/drain injection saturation current  A/m^{2}  0 
ISREC  Recombination in depletion saturation current  A/m^{2}  1e5 
ISTUN  Reverse tunneling saturation current  A/m^{2}  0 
LN  Electron/hole diffusion length  m  2e6 
VREC0  Voltage dependent parameter for recombination current  V  0 
VTUN0  Voltage dependent parameter for tunneling current  V  0 
NBJT  Power coefficient of channel length dependency for bipolar current    1 
LBJT0  Reference channel length for bipolar current  m  0.2 e6 
VABJT  Early voltage for bipolar current  V  10 
AELY  Channel length dependency of early voltage bipolar current  V/m  0 
AHLI  High level injection parameter for bipolar current    0 
RBODY  Intrinsic body contact sheet resistance  W/m^{2}  0 
RBSH  Extrinsic body contact sheet resistance W/m2 0  W/m^{2}  0 
TT  Diffusion capacitance transit time coefficient  s  1e12 
NDIF  Power coefficient of channel length dependency for diffusion capacitance    1 
LDIF0  Channel length dependency coefficient of diffusion capacitance    1 
VSDFB  Source/drain bottom diffusion capacitance flatband voltage  V  calculated 
VSDTH  Source/drain bottom diffusion capacitance threshold voltage  V  calculated 
CSDMIN  Source/drain bottom diffusion minimum capacitance    calculated 
ASD  Source/drain bottom diffusion minimum parameter    0.3 
CSDESW  Source/drain sidewall fringing capacitance per unit length  F/m  0 
DLCB  Length offset fitting parameter for body charge  m  0.0 
DLBG  Length offset fitting parameter for backgate charge  m  0.0 
DELVT  Threshold voltage adjust for CV  V  0.0 
FBODY  Scaling factor for body charge    1.0 
ACDE  Exponetial coefficient for charge thickness in CAPMOD=3 for accumulation and depletion regions  m/V  1.0 
MOIN  Coefficient for the gatebias dependent surface potential  V^{0.5}  15.0 
TCJSWG  Temperature coefficient of CJSWG 1/K 0  1/K  0 
TPBSWG  Temperature coefficient of PBSWG  V/K  0 
CTH0  Normalized thermal capacity  m.°C / (W*sec)  0 
RTH0  Normalized thermal resistance  m.°C/W  0 
NTRECF  Temperature coefficient for NRECF    0 
NTRECR  Temperature coefficient for NRECR    0 
XBJT  Power dependence of jbjt on temperature    1 
XDIF  Power dependence of jdif on temperature    XBJT 
XREC  Power dependence of jrec on temperature    1 
XTUN  Power dependence of jtun on temperature    0 
Silvaco Improvements
Options
The options VZERO and EXPERT are supported in the SmartSpice
BSIM3SOI PD v2.1 model.
The option VZERO=2 allows faster runtime when large circuits are
used.
The EXPERT option can be specified to detect possible problems in
models, before and during simulation, such as:
Parameter  Description  Units  Default 
VERSION  Version selector    2.1 
SMART  Improvement selector    1 
LMIN  Limit for binning  m  0.0 
LMAX  Limit for binning  m  1.0 
WMIN  Limit for binning  m  0.0 
WMAX  Limit for binning  m  1.0 
AT  GAMMA1  GAMMA2  VBM  VBX  XT  KT1 
KT1L  KT2  UA1  UB1  UC1  UTE  RTH0 
PRT  CGDL  CGSL  CKAPPA  CF  CLC  CLE 
XJ  RBODY  CSDMIN  CTH0  ASD  CSDESW  CJSWG 
PBSWG  MJSWG  TT  XBJT  XDIF  XREC  XTUN 
LN  NDIF  LDIF0  TCJSWG  TPBSWG  NTRECF  NTRECR 
The SMART model parameter allows to switch on Silvaco improvements
which are not compatible with original Berkeley model. The SMART
model parameter has been created as follows :