Published Papers

General TCAD

The full text for most of these papers may be found at the IEEE website at www.ieee.org.

Z. Zurita, M. M. Shukri, M.M. Rusop,
"Study the effect of polysilicon doping on the junction depth in 65nm structure",
2010 Intl Conf on Electronic Devices, Systems and Applications (ICEDSA), 2010, pp. 418 - 422.

Aapo Varpula,
"Modeling of transient electrical characteristics for granular semiconductors", Journal of Applied Physics, Vol. 108, Issue: 3, 2010, pp. 034511 - 034511-13.

Daniel Montolio-Rodriguez, Patrick Linke, David Linke, Mirko Z. Stijepovic,
"Optimal conceptual design of processes with heterogeneous catalytic reactors",
Chemical Engineering Journal, Vol. 163, Issue 3, 1 October 2010, pp. 438-449.

Zheng Li, V. Eremin, J. Harkonen, P. Luukka, E. Tuominen, E. Tuovinen, E. Verbitskaya,
"Modeling, simulation and data fitting of the charge injected diodes (CID) for SLHC tracking applications",
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 617, Issues 1-3, 11 May 2010-21 May 2010, pp. 552-557.

Woo Young Choi,
"Applications of impact-ionization metal–oxide-semiconductor (I-MOS) devices to circuit design",
Current Applied Physics, Vol. 10, Issue 2, March 2010, pp. 444-451.

Chi-Woo Lee, Aryan Afzalian, Isabelle Ferain, Ran Yan, Nima Dehdashti Akhavan, Weize Xiong, Jean-Pierre Colinge,
"Influence of gate misalignment on the electrical characteristics of MuGFETS",
Solid-State Electronics, Vol. 54, Issue 3, March 2010, pp. 226-230.

Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Pedram Razavi, Jean-Pierre Colinge,
"Performance estimation of junctionless multigate transistors",
Solid-State Electronics, Vol. 54, Issue 2, February 2010, pp. 97-103.

Zhenqiang Ma, Guoxuan Qin,
"Fast Flexible Electronics Made from Nanomembranes Derived from High-Quality Wafers",
Semiconductor Nanomaterials for Flexible Technologies, 2010, pp. 67-104.

Zhigong Wang, Xiaosong Gu, Xiaoying Lü, Zhenglin Jiang, Wenyuan Li, Guangming Lü, Yufeng Wang, Xiaoyan Shen, Xintai Zhao, Huiling Wang, Zhenyu Zhang, Hongmei Shen, Yang Wu, Weixing Shen, Jingyang Zhang, Dong Chen, Xiaoyi Mao, Huaxiang Shen,
"Microelectronics-embedded channel bridging and signal regeneration of injured spinal cords",
Progress in Natural Science, Vol. 19, Issue 10, 10 October 2009, pp. 1261-1269.

Christopher R. Anderson,
"Efficient solution of the Schröedinger-Poisson equations in layered semiconductor devices",
Journal of Computational Physics, Vol. 228, Issue 13, 20 July 2009, pp. 4745-4756

Woo Young Choi,
"Applications of impact-ionization metal-oxide-semiconductor (I-MOS) devices to circuit design",
Current Applied Physics, In Press, Corrected Proof, Available online 3 July 2009

M. Narayanan, H. Al-Nashash,
"Introducing undergraduate students to simulation of semiconductor doping techniques",
Computers & Electrical Engineering, Vol. 35, Issue 4, July 2009, pp. 567-577.

B. Ayub, M. Rusop,
"Optimization of dry oxidation parameters for gate dielectric in PMOS transistor",
AIP Conference Proceedings, Vol. 1136, 2009, pp. 565-569

J. Lavery,
"Quantum Tunneling Model of a P-N Junction in Silvaco",
Naval Postgraduate School, Monterey, CA., Sep 2008, pp. 119

Sheehan, D.P.,
Energy, entropy and the environment (How to increase the first by decreasing the second to save the third.), J. Sci. Explor., {22} 459 (2008).

Sheehan, D.P. and D.H.E. Gross, Extensivity and the thermodynamic limit: Why size really does matter, Physica A {370} 461 (2006).

Sheehan, D.P. and T. Seideman,
Intrinsically biased electrocapacitive catalysis; J. Chem. Physics {122} 204713 (2005).

Sheehan, D.P., J.H. Wright, A.R. Putnam, and E.K. Perttu,
Intrinsically-biased resonant NEMS-MEMS oscillator and the second law of thermodynamics; Physica E {29} 87 (2005).

Sheehan, D.P., A.R. Putnam and J.H. Wright, A solid-state Maxwell demon; Found. Phys. {32} 15

Sheehan, D.P. (Editor),
The Second Law of Thermodynamics: Foundations and Status}, Special Issue of Foundations of Physics, (Vol. 37.12); Proceedings of AAAS Symposium, June 19-22, 2006, University of San Diego, CA (2007).57 (2002).

Li Xiaogang, Feng Zhicheng, Zhang Zhengyuan, Hu Mingyu,
"A charge allocating model for the breakdown voltage calculation and optimization of the lateral
RESURF devices",
Journal of Semiconductors, Vol. 30, No. 3, March 2009, pp. 034005-1.

René Pinnau, Jorge Mauricio Ruiz V,
"Convergent finite element discretizations of the density gradient equation for quantum semiconductors",
Journal of Computational and Applied Mathematics, Vol. 223, Issue 2, 15 January 2009, pp. 790-800.

Ratul Kumar Baruah, Santanu Mahapatra,
"Justifying threshold voltage definition for undoped body transistors through “crossover point” concept",
Physica B: Condensed Matter, Vol. 404, Issues 8-11, 1 May 2009, pp. 1029-1032.

Th. Canneaux, D. Mathiot, J.P. Ponpon, S. Roques, S. Schmitt, Ch. Dubois,
"Diffusion of phosphorus implanted in germanium",
Materials Science and Engineering: B, Vol. 154-155, 5 December 2008, pp. 68-71.

Enrico Furno, Francesco Bertazzi, Michele Goano, Giovanni Ghione, Enrico Bellotti,
"Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation",
Solid-State Electronics, Vol. 52, Issue 11, November 2008, pp. 1796-1801.

S. S. Mondal,
"Formation of the Si-Schottky junctions by simple electrochemical process and verification of their characteristics by TCAD",
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on 21-24 Nov. 2008 pp. 731 - 733.

M. Narayanan, H. Al-Nashash,
"Introducing undergraduate students to simulation of semiconductor doping techniques",
Computers & Electrical Engineering, In Press, Corrected Proof, Available online 1 October 2008.

R. E. Pearson, K. D. Hirschman, R. Manley,
"Process Model Verification for Dopant Segregation and Oxidation Enhanced Diffusion",
University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial 13-16 July 2008 pp. 148 - 152.

M. G. Ancona, A. Svizhenko,
"Physics of tunneling from a macroscopic perspective",
2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), pp. 361-4, 2008.

K. Mochizuki, T. Someya, T Takahama, H. Onose, and N. Yokoyama
"Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through SiO2 Layers into 4H-SiC",
IEEE Trans. on Electron Devices, Vol. 55, No.8, Aug. 2008, pp. 1997-2003.

J. Vobecky, P. Hazdra
"Dynamic avalanche in diodes with local lifetime control by means of palladium",
Microelectronics Journal, Vol. 39, Issue 6, Jun. 2008, pg 878-883.

Kathy Boucart, Adrian Mihai Ionescu
"A new definition of threshold voltage in Tunnel FETs",
Solid-State Electronics, In Press, Corrected Proof, Available online 9 May 2008.

Rishu Chaujar, Ravneet Kaur, Manoj Saxena, Mridula Gupta, R.S. Gupta
"Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET for ULSI",
Microelectronic Engineering, Vol. 85, Issue 3, Mar. 2008, pp. 566-576.

Xue-Jun Zheng, Jun-Jie Zhang, Yi-Chun Zhou, Ming-Hua Tang, Bo Yang, Yi-Qiang Chen,
"Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco/Atlas",
Transactions of the Nonferrous Metals Society of China. Vol. 17, No. Special 1, pp. s752-s755. Dec. 2007.

Vasily Suvorov, Andreas Hossinger, Zoran Djuric, Neboysha Ljepojevic,
"A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation",
Journal of Computational Electronics, Vol. 5, No. 4, December, 2006, Proceedings of the International Workshop on Computational Electronics (IWCE-11) Part I, pp. 291-295.

D. Kimpton, M. Baida, V. Zhuk, M. Temkin, I. Chakarov,
"Multiple Type Grid Approach for 3D Process Simulation",
2006 International Conference on Simulation of Semiconductor Processes and Devices, Sept. 2006 pp. 369 - 372.

I. Karmakov, A. Konova, I. Chakarov,
"Spectroscopic Ellipsometry as a Tool for Damage Profiling in Very Shallow Implanted Silicon", Plasma Processes and Polymers, Vol. 3, No. 2, pp. 214-218. 17 Feb. 2006

M. El Khaldi, F. Podevin, A. Vilcot,
"Microstrip parallel-line coupler to perform broadband optically controlled phase-shifting",
Microwave and Optical Technology Letters, Vol. 47, Issue 6, 20 Dec. 2005, pp. 570-573.

Vasily G. Suvorov
"Numerical analysis of liquid metal flow in the presence of an electric field: application to liquid metal ion source",
Surface and Interface Analysis, Vol. 36, Issue 5-6, May - Jun. 2004, pp. 421-425.

S. Michael, L.T.B. Canfield,
"The design and optimization of advanced thermophotovoltaic devices for deep space applications using a new modeling approach",
AIP Conference Proceedings, Vol. 890, No. 1, 2007, pp.s 213-226.

N. Zerounian, M. Enciso-Aguilar, T. Hackbarth, H.-J. Herzog and F. Aniel,
"Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET",
Solid-State Electronics, Vol. 51, Issue 3, March 2007, pp. 449-459.

Harsupreet Kaur, Sneha Kabra, Subhasis Haldar and R.S. Gupta,
"An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET",
Microelectronics Journal, Vol. 38, Issue 3, March 2007, pp. 352-359.

R. Kinder, F. Schwierz, P. Beňo and J. Geßner
"Simulation of boron diffusion in Si and strained SiGe layers",
Microelectronics Journal, Vol. 38, Issues 4-5, April-May 2007, pp. 576-582.

G. M. Buiatti, F. Cappelluti, G. Ghione,
"Physics-based PiN diode SPICE model for power-circuit simulation",
IEEE Transactions on Industry Applications, Vol. 43, No. 4, July-August 2007, pp. 911-919.

S. -W. Kwak, K. H. Kim, I. Kim, G. Cho
"Development of X-Ray Scanner Using 450-kVp X-Ray"
IEEE Transactions on Nuclear Science, Vol. 50, Issue 6 II, December 2003, pp. 2414-2419.

C. Kim, M. Li, M. Rodesch, A. Lowe, K. Richmond, F. Cerrina
"Biological lithography: Improvements in DMA synthesis methods"
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, I

C. Kim, M. Li, A. Lowe, N. Venkataramaiah, K. Richmond, J. Kaysen, F. Cerrina
"DNA microarrays: An imaging study"
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, I

B. Ilic, D. Czaplewski, M. Zalalutdinov, B. Schmidt, H. G. Craighead
"Fabrication of flexible polymer tubes for micro and nanofluidic applications"
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, I

A. K. Sharma, S. H. Zaidi, S. Lucero, S. R. J. Brueck, N. E. Islam
"Mobility and transverse electric field effects in channel conduction of wrap-around-gate nanowire MOSFETs"
IEE Proceedings: Circuits, Devices and Systems, Vol. 151, Issue 5, October 2004, pp. 422-430.

S. Sedlmaier, K. K. Bhuwalka, A. Ludsteck, M. Schmidt, J. Schulze, W. Hansch, I. Eisele
"Gate-controlled resonant interband tunneling in silicon"
Applied Physics Letters, Vol. 85, Issue 10, 6 September 2004, pp. 1707-1709.

Y. D. Hong, Y. T. Yeow, W. -K. Chim, K. -M Wong, J. J. Kopanski
"Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement"
IEEE Transactions on Electron Devices, Vol. 51, Issue 9, September 2004, pp. 1496-1503.

A. Chatterjee, B. Bhuva, R. Schrimpf
"High-speed light modulation in avalanche breakdown mode for Si diodes"
IEEE Electron Device Letters, Vol. 25, Issue 9, September 2004, pp. 628-630.

B. A. Biegel
"Accuracy counts in modeling TCAD's future: Device and process simulation find intelligence on the World Wide Web"
IEEE Potentials, Vol. 19, Issue 3, August 2000, pp. 19-22.

S. Uppal, A. F. W. Willoughby, J. M. Bonar, J. Zhang
"Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si0.9Ge0.1"
Applied Physics Letters, Vol. 85, Issue 4, 26 July 2004, pp. 552-554.

I. Chakarov and M. Temkin
"Modeling of Ion Implanatation in SiC Crystals",
Nucllear Intstruments Methods Physics Research B, Beam Interactactions Materials Atoms, Vol. 242, No.1/2, Jan. 2006, pp. 690-692.

F. Cappelluti, F. Bonani, M. Furno, G. Ghione, R. Carta, L. Bellemo, C. Bocchiola, L. Merlin
"Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes"
Microelectronics Journal, Vol. 37, Issue 3, March 2006, pp. 190-196.

V. G. Suvorov (Silvaco Technol. Centre, Silvaco Data Syst. Ltd., St. Ives, UK)
"Numerical analysis of liquid metal flow in the presence of an electric field: application to liquid metal ion source"
Surface and Interface Analysis, Vol. 36, No. 5-6, May-June 2004, pp. 421-425.

S. Takagi, K. Iyanagi, S. Onoue, T. Shinmura, M. Fujino
"Topography simulation of reactive ion etching combined with plasma simulation, sheath model, and surface reaction model"
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volu

F. Boucard, F. Roger, I. Chakarov, V. Zhuk, M. Temkin, X. Montagner, E. Guichard, D. Mathiot
"A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing"
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 124-125

S. Daliento, L. Mele, P. Spirito, B. N. Limata
"All electrical resistivity profiling technique for ion implanted semiconductor materials"
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 124-125

J. Urresti, S. Hidalgo, D. Flores, J. Roig, J. Rebollo, I. Mazarredo
"A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices"
Solid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1309-1313.

R. J. Pieper, M. Sherif
"Comprehensive analytical approach to predicting freeze-out and exhaustion for uniform single-impurity semiconductors in equilibrium"
IEEE Transactions on Education, Vol. 48, Issue 3, August 2005, pp. 413-421.

L.-H. Chong, K. Mallik, C. H. De Groot
"The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device"
Microelectronic Engineering, Vol. 81, Issue 2-4, August 2005, pp. 171-180.

M. Balucani, V. N. Dobrovolsky, A. V. Osipov, A. Ferrari
"Model of the drain current saturation in long-gate JFETs and MESFETs"
Solid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1251-1254.

S. Ruffell, P. J. Simpson, I. V. Mitchell
"Electrical characterization of 5 keV phosphorous implants in silicon"
Journal of Applied Physics, Vol. 98, Issue 1, 1 July 2005, pp. 1-5.

R. Duane, M. F. Beug, A. Mathewson
"Novel capacitance coupling coefficient measurement methodology for floating gate nonvolatile memory devices"
IEEE Electron Device Letters, Vol. 26, Issue 7, July 2005, pp. 507-509.

L. Perniola, S. Bernardini, G. Iannaccone, P. Masson, B. De Salvo, G. Ghibaudo, C. Gerardi
"Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories"
IEEE Transactions on Nanotechnology, Vol. 4, Issue 3, May 2005, pp. 360-368.

K. K. Bhuwalka, J. Schulze, I. Eisele
"Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering"
IEEE Transactions on Electron Devices Vol. 52, Issue 5, May 2005, pp. 909-917.

Z. Djuric, (Silvaco Data Systems, Silvaco Technology Centre)
"Three-dimensional simulation of liquid metal spray deposition onto arbitrary surfaces"
Modelling and Simulation in Materials Science and Engineering, v 12, n 3, May, 2004, pp. 529-544.

S. Karmalkar, P. V. Mohan, B. P. Kumar
"A unified compact model of electrical and thermal 3-D spreading resistance between eccentric rectangular and circular contacts"
IEEE Electron Device Letters, Vol. 26, Issue 12, December 2005, pp. 909-912.

C. Xu, R. Gharpurey, T. S. Fiez, K. Mayaram
"A green function-based parasitic extraction method for inhomogeneous substrate layers"
Proceedings - Design Automation Conference, 2005, pp. 141-146.

S. Daliento, L. Mele, P. Spirito, L. Gialanella, M. Romano, B. N. Limata, R. Carta, L. Bellemo
"An experimental analysis of localized lifetime and resistivity control by Helium implant in Si"
Proceedings of the International Symposium on Power Semiconductor Devices and Ics, 2005, pp. 259-2

F. Balon, J. M. Shannon
"Modeling of source-gated transistors in amorphous silicon"
Journal of the Electrochemical Society, Vol. 152, Issue 8, 2005.

M. S. A. Karunaratne, A. F. W. Willoughby, J. M. Bonar, J. Zhang, P. Ashburn
"Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon"
Journal of Applied Physics, Vol. 97, Issue 11, 2005, pp. 1-7.

C. Piemonte, M. Boscardin, G. F. Dalla Betta, S. Ronchin, N. Zorzi
"Development of 3D detectors featuring columnar electrodes of the same doping type"
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detect

T. Bourouina, T. Masuzawa, H. Fujita
"The MEMSNAS process: Microloading effect for micromachining 3-D structures of nearly all shapes"
Journal of Microelectromechanical Systems, Vol. 13, Issue 2, April 2004, pp. 190-199.

D. Lederer, J. -P. Raskin
"Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers"
Solid-State Electronics, Vol. 47, November 2003, pp. 1927-1936.

Kei Hanai and Yoshinori Matsumoto,
"A Study of Gray Scale Lithography with Micro Chrome Pattern",
IEEJ Transactins on Sensors and Micromachines, Vol. 123, pp. 410-415, October, 2003 [in Japanese

Wang Jimin, Li Yu, Li Ruiwei
"An improved silicon-oxidation-kinetics and accurate analytic model of oxidation"
Solid-State Electronics, Vol. 47, October 2003, pp. 1699-1705.

J. Urresti, S. Hidalgo, D. Flores, J. Roig, J. Rebollo, I. Mazarredo,
"Optimisation of very low voltage TVS protection devices"
Microelectronics Journal, Vol. 34, September 2003, pp. 809-813.

S. K. Han, Y. I. Choi and S. K. Chung
"An analytic model for breakdown voltage of gated diodes"
Microelectronics Journal, Vol. 34, May-Aug. 2003, pp. 525-527.

K. D. Hirschman, J. Hebding, R. Saxer and K. Tabakman
"Semiconductor Process and Device Modeling: a graduate course/undergraduate elective in microelectronic engineering at RIT Proceedings of the 15th Biennial University/Government/Industry Microelectronics Symposium 2003, 30 Jun. - 2 Jul. 2003, pp. 138-14

T. Vamsi Krishna, J. R. Jessing, D. D. Russell, J. Scaggs, L. R. Warner and J. A. Hartman
"Modeling and design of polythiophene gate electrode ChemFETs for environmental pollutant sensing"
Proceedings of the 15th Biennial University/Government/Industry Microelectronics Symposium 2003, 30

M. Lemme, et al.
"Influence of channel width on n- and p-type nano-wire-MOSFETs on silicon on insulator substrate"
Microelectronic Engineering, Vol. 67-68, June 2003, pp. 810-817.

R. B. Beck
"Formation of ultrathin silicon oxides-modeling and technological constraints"
Materials Science in Semiconductor Processing, Vol. 6, February-June 2003, pp. 49-57.

J. -D. Arnould, R. Gary, A. Vilcot
"3D photo-induced load modeling for optically controlled microwave microstrip line"
Microwave and Optical Technology Letters, Vol. 40, Issue 5, 5 March 2004, pp. 356-359.

I. Karmakov, I. Chakarov, A. Konova
"Depth profile characterization of low-energy B+ and Ge+-ion-implanted Si"
Applied Surface Science, Vol. 211, April 2003, pp. 270-279

V.A. Ignatova, I. R. Chakarov, I. V. Katardjiev
"Non-thermodynamic approach to including bombardment-induced post-cascade redistribution of point defects in dynamic Monte Carlo code"
Nuclear Instruments and Methods in Physics Research B, Vol. 202, April 2003, pp. 24-30.

B. Jaroszewicz, T. Budzynski, A. Panas, A. Kociubinski, W. Sysz, W. Jung, R. Jakiela, A. Barcz, J. Marczewski, P. Grabiec
"High-quality p-n junction fabrication by ion implantation using the LPCVD amorphous silicon films"
Vacuum, Vol. 70, March 2003, pp. 81-85.

M. M. Gongora-Nieto, P. D. Pedrow , B. G. Swanson, G. V. Barbosa-Canovas
"Impact of air bubbles in a dielectric liquid when subjected to high field strengths"
Innovative Food Science and Emerging Technologies, Vol. 4, March 2003, pp. 57-67.

S. Sedlmaier et al.
"Vertical Tunnel FET Grown by Silicon MBE"
ICSI3 SiGe Conference, Santa Fe, New Mexico, March 2003.

M. Swartz
"CMS pixel simulations"
Nuclear Instruments and Methods in Physics Research A, Vol. 511, Sept. 2003, pp. 88 - 91

N. D. J
"Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy"
Phys. Rev. B 67, 165307 (2003)

Wai-Kay Yip, Min Shen, Ming-C. Cheng, Robert Fithen and Goodarz Ahmadi
"Hydrodynamic modeling of short-channel devices using an upwind flux vector splitting scheme"
Computer Methods in Applied Mechanics and Engineering, Vol. 191, Issue 47-48, Nov. 2002, pp. 5427-5445

Q. T. Zhao, P. Kluth, S. Winnerl, S. Lenk, S. Mantl
"Self-assembly patterning of epitaxial CoSi2 nano-structures"
Microelectronic Engineering, Vol. 64, October 2002, pp. 443-447.

Sheehan DP, Putnam AR, Wright JH
"A solid-state Maxwell demon"
Foundations of Physics, 32 (10): 1557-1595 OCT 2002

A. Hattab, V. Aubry-Fortuna, F. Meyer, V. Yam, V. L. Thanh, D. Bouchier and C. Clerc
"Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots"
Microelectronic Engineering, Vol. 64, Issues 1-4, October 2002, pp. 435-441.

D. P. Sheehan, A. R. Putnam and J. H. Wright
"A solid-state Maxwell demon"
Foundations of Physics, Vol. 32, Oct. 2002, pp. 1557 - 1595.

Reeves, DE
"Comparison of Analytic and Numerical Models With Commercially Available Simulation Tools for the Prediction of Semiconductor Freeze-Out and Exhaustion"
Naval Postgraduate School, Monterey, CA. Sep 2002. 84p, NTIS ADA407191

V. Ignatova and I. Chakarov
"Modeling of bombardment-induced diffusion and segregation during the self-sputtering of Ga+ ions at SiO2/Si interfaces"
Surface and Coatings Technology, Vol.s 158-159, Sep. 2002, pp. 281-287.

N. Peng, C. Jeynes, R. Webb, I. Chakarov and M. Blamire
"Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation"
Physica C: Superconductivity, Vol.s 372-376, Part 1, Aug. 2002, pp. 55-58.

P. Papadopoulou, N. Georgoulas and A. Thanailakis
"An extensive study of the photocurrent amplification mechanism of silicon bulk-barrier diodes based on simulation and experimental results"
Thin Solid Films, Vol. 415, Issues 1-2, 1 Aug. 2002, pp. 276-284.

P. Masson, J. -L. Autran and D. Munteanu
"DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects"
Solid-State Electronics, Vol. 46, Issue 7, July 2002, pp. 1051-1059.

A. Rashevsky, V. Bonvicini, P. Burger, S. Piano, C. Piemonte and A. Vacchi
"Large area silicon drift detector for the ALICE experiment"
Nuclear Instruments and Methods in Physics Research Section A, Vol. 485, Issues 1-2, 1 June 2002,

X. F. Gao, J. J. Liou, A. Ortiz-Conde, J. Bernier and G. Croft
"A physics-based model for the substrate resistance of MOSFETs"
Solid-State Electronics, Vol. 46, Issue 6, June 2002, pp. 853-857.

O. I. Velichko, V. A. Dobrushkin, A. N. Muchynski, V. A. Tsurko and V. A. Zhuk
"Simulation of Coupled Diffusion of Impurity Atoms and Point Defects under Nonequilibrium Conditions in Local Domain"
Journal of Computational Physics Vol. 178, Issue 1, 1 May 2002, pp. 196-209.

N. Takaura, R. Nagai, H. Asakura and et al.
"Analysis of boron penetration and gate depletion using dual-gate PMOSFETs for high performance G-bit DRAM design"
IEICE Trans. Electronics, Vol. E85C, May 2002, pp. 1138 - 1145.

H. Väinölä, J. Storgårds, M. Yli-Koski and J. Sinkkonen
"Light induced change on the built-in potential of p/p+ structures and its effect on carrier lifetime measurements"
Materials Science and Engineering B, Vol. 91-92, 30 Apr. 2002, pp. 421-424.

C. Cerrina, A. Nejim, Y. Wang and P. L. F. Hemment
"Carrier transport properties of ion beam synthesised Si1-xGex alloy heavily doped with arsenic"
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 188, Issues 1-4, April 2002, pp. 170-173

N. Peng, C. Jeynes, R. Webb, I. Chakarov, D. J. Kang, D. Moore and M. Blamire
"Monte Carlo simulations of energetic proton beam irradiation damage defect productions in YBCO thin films with Au masks"
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 188, Issues 1-4, April 2002, pp. 189-195

Michalopoulos, P
"Novel Approach for the Development and Optimization of State-of-the- Art Photovoltaic Devices Using Silvaco"
Naval Postgraduate School, Monterey, CA. Mar 2002. 187p. NTIS ADA407676

B. Gustafson, D. Csontos, M. Suhara, L. -E. Wernerssona, W. Seifert, H. Xu and L. Samuelson
"Coupling between lateral modes in a vertical resonant tunneling structure"
Physica E: Low-dimensional Systems and Nanostructures, Vol. 13, Issues 2-4, Mar. 2002, pp. 950-953

D. J. Paul, A. Ahmed, A. C. Churchill, D. J. Robbins and W. Y. Leong
"Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation"
Materials Science and Engineering B, Vol. 89, Issues 1-3, 14 February 2002, pp. 111-115

V. Ignatova, I. Chakarov, A. Torrisi and A. Licciardello
"Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study"
Applied Surface Science, Vol. 187, Issues 1-2, 14 Feb. 2002, pp. 145-153.

G. M. Kim, A. Kovalgin, J. Holleman and et al.
"Replication molds having nanometer-scale shape control fabricated by means of oxidation and etching"
Journal of Nanoscience and Nanotechnology, Vol. 2, Feb. 2002, pp. 55-59.

R. Ragi, M. A. Romero, B. Nabet
"Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices"
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Z. Li
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U. Efron, I. David, V. Sinelnikov, B. Apter
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R. B. Beck
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T. H. Prettyman, K. D. Ianakiev, S. A. Soldner and Cs. Szeles
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E. V. Monakhov, J. Wong-Leung, A. Yu. Kuznetsov, C. Jagadish, and B. G. Svensson
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M. Falah, D. Linton and J. Williamson
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D. Passeri, P. Ciampolini, G. M. Bilei and L. Berta
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V. Manuylov
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H. Vainola, J. Storgards, M. Yli-Koski, and J. Sinkkonen
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Material Science and Engineering, B91-92, 2002, pp. 421-424.

H. Vainola, J. Storgards, M. Yli-Koski, and J. Sinkkonen
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Material Science and Engineering, B91-92, 2002, pp. 421-424.

H. Vainola, J. Storgards, M. Yli-Koski, and J. Sinkkonen
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P. Ciampolini, D. Passeri, G. M. Bilei and P. Placidi
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R. D. Forrest, G. Y. Chen and S. R. P. Silva
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W. Barth, T. Debski, N. Abedinov, Tz. Ivanov, H. Heerlein, B. Volland, T. Gotszalk, I. W. Rangelow, K. Torkar, K. Fritzenwallner et al.
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M. Stadele, R. J. Luyken, M. Roosz, M. Specht, W. Rasner, L. Dreeskornfeld, J. Hartwich, F. Hofmann, J. Kretz, E. Landgraf, L. Risch
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I. Pesic, A. Mutlu, N. Gunther, M. Rahman, J. Schulze, W. Hansch, I. Eisele
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S. Musumeci, R. Pagano, A. Raciti, F. Frisina, M. Melito, M. Saggio
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A. Y. Kovalgin, J. Holleman, G. Iordache, T. Jenneboer, F. Falke, V. Zieren, M. Goossens
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A. Y. Kovalgin, J. Holleman, G. Iordache
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M. S. A. Karunaratne, J. M. Bonar, J. Zhang, A. F. W. Willoughby
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L. Perniola, S. Bernardini, G. Iannaccone, B. De Salvo, G. Ghibaudo, P. Masson, C. Gerardi
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Y. David and U. Efron
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IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings, 2004 23rd IEEE Conv

N. P. Hong, J. -W Hong
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C. H. P. Poa and S. R. P. Silva
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C. Renard (SILVACO Data Systems), P. Scheiblin, F. De Crecy, A. Ferron, E. Guichard, P. Holliger, C. Laviron
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Y. D. Hong and Y. T. Yeow
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D. Girginoudi, N. Georgoulas, A. Thanailakis, E. K. Polychroniadis
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K. R. McIntosh, M. J. Cudzinovic, D. D. Smith, W. P. Mulligan, R. M. Swanson
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N. L. Rupesinghe, M. Chhowalla, K. B. K. Teo, G. A. J. Amaratunga
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Lombardi, Manzini, Saporito, Vanzi
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Li, Temkin, Crandle
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Leon, Crandle
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H. Jakobsen and D. Lapadatu
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