Published Papers

III-V and Advanced Materials

The full text for most of these papers may be found at the IEEE website at www.ieee.org.

Juan M Lopez-Gonzalez1 and Michael Schröter2,3
"Study of emitter width effects on βF , ƒT and ƒmax of 200 GHz SiGe HBTs by DD, HD and EB device simulation"
2009 Semicond. Sci. Technol. 24 115005 (http://iopscience.iop.org/0268-1242/24/11/115005)
1 Micro and Nano Technologies Group, Department of Electronic Engineering, Universitat Politecnica de Catalunya, Campus Nord, Modul C4, Calle Jordi Girona 1, Barcelona 08034, Spain
2 Chair for Electron Devices and Integrated Circuits, Dresden University of Technology, Dresden 01062, Germany
3 Department of Electronics and Computer Engineering, University of California San Diego, La Jolla,
CA 92093-0407, USA

Samrat L. Sabat, Leandro dos Santos Coelho, Ajith Abraham,
"MESFET DC model parameter extraction using Quantum Particle Swarm Optimization",
Microelectronics Reliability, Vol. 49, Issue 6, June 2009, pp. 660-666

A. S. Zoolfakar, A. Ahmad,
"Holes mobility enhancement using strained silicon, SiGe technology",
5th International Colloquium on Signal Processing & Its Applications, CSPA 2009. 6-8 March 2009, pp. 346-349

Yuehang Xu, Yunchuan Guo, Yunqui Wu, Ruimin Xu, Bo Yan,
"Influence of the Al mole fraction on microwave noise performance of AlxGa1-xN/GaN HEMTs",
International Conference on Communications, Circuits and Systems, ICCCAS 2009. 23-25 July 2009, pp. 759-761

T. Bieniek, J. Steszewski, M. Sochacki, J. Szmidt,
"Electrical simulations of SiC Schottky diodes, Resurf JFET and Resurf MOSFET on silicon carbide substrate (SIC)"
Elektronika, Vol. 49, No. 7-8, 2008, pp. 11-15

W. A. Gibson,
"Comparison of Gallium Nitride High Electron Mobility Transistors Modeling in Two and Three Dimensions",
Naval Postgraduate School, Monterey, CA., Dec 2007, pp. 77

L.-E. Wernersson, M. Ärlelid, M. Egard, E. Lind,
"Gated tunnel diode in oscillator applications with high frequency tuning",
Solid-State Electronics, Vol. 53, Issue 3, March 2009, pp. 292-296.

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang,
"Microwave complementary doped-channel field-effect transistors",
Superlattices and Microstructures, Vol. 45, Issue 1, January 2009, pp. 33-38.

James G. Champlain, Richard Magno, Mario Ancona, Harvey S. Newman, J. Brad Boos,
"InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material",
Solid-State Electronics, Vol. 52, Issue 11, November 2008, pp. 1829-1832.

F. Amir, N.Farrington, T. Tauqeer, M. Missous,
"Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance",
2008 International Conference on Advanced Semiconductor Devices and Microsystems, pp. 51-4, 2008.

Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang
"Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures",
Solid-State Electronics, Vol. 52, Issue 7, Jul. 2008, pp. 1018-1023.

B. A. Polash, M. A. Huque, S. K. Islam, H. Huq,
"High temperature performance measurement and analysis of GaN HEMTs",
Proceedings of the SPIE - The International Society for Optical Engineering, Vol. 6894, 7 Feb. 2008, pp. 68941J-1-9.

K. N. M. Kharuddin, B. Y. Majlis,
"Electrical characteristics of Al/sub 0.22/Ga/sub 0.78/As/In/sub 0.22/Ga/sub 0.78/As PHEMT with gate length in nano regime"
IEEE International Conference on Semiconductor Electronics, 2004. ICSE 2004. 7-9 Dec. 2004 pp. 5.

Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta and R.S. Gupta,
"Two-dimensional subthreshold analysis of sub-micron GaN MESFET",
Microelectronics Journal, Vol. 38, Issues 4-5, April-May 2007, pp. 547-555.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta and R.S. Gupta, "Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation",
Microelectronics Journal, Vol. 38, Issues 10-11, October-November 2007, pp. 1013-1020.

Jung Gil Yang, Sunkyu Choi; Yongsik Jeong; Kyounghoon Yang,
"Theoretical and experimental study of the InP/InGaAs PIN diode for millimeter-wave MMIC applications",
2007 International Conference on Indium Phosphide and Related Materials, 2007, pp. 133-136.

Francesco G. Della Corte, Fortunato Pezzimenti and Roberta Nipoti,
"Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes",
Microelectronics Journal, Vol. 38, Issue 12, December 2007, pp. 1273-1279.

Xiaochuan Deng, Bo Zhang, Zhaoji Li and ZhuangLiang Chen,
"Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs",
Microelectronic Engineering, Vol. 85, Issue 2, February 2008, pp. 295-299.

M. Borgarino, J. G. Tartarin, J. Kuchenbecker, T. Parra, H. Lafontaine, T. Kovacic, R. Plana, J. Graffeuil
"On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors"
IEEE Microwave and Guided Wave Letters, Vol. 10, Issue 11, November 2000, pp. 466-468

W. R. McKinnon, R. Driad, C. Storey, A. Renaud, S. P. McAlister, T. Garanzotis, A. J. Springthorpe
"Emitter interface in InP-based HBTs with InAlAs/InP composite emitters"
IEICE Transactions on Electronics Vol. E84-C, Issue 10, October 2001, pp. 1373-1378

S. H. Olsen, A. G. O'Neill, S. Chattopadhyay, L. S. Driscoll, K. S. K. Kwa, D. J. Norris, A. G. Cullis, D. J. Paul
"Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs"
IEEE Transactions on Electron Devices, Vol. 51, Issue 8, August 2004, pp. 1245-1253

B. Lee, H. Yoon, K. S. Hyun, Y. H. Kwon, I. Yun
"Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers"
Microelectronics Journal, Vol. 35, Issue 8, August 2004, pp. 635-640

W. -B. Chen, Y. -K. Su, C. -L. Lin, H. -C. Wang, H.-C. Yu, S. -M. Chen, J. -Y. Su
"Simulation and fabrication of InGaP/Al0.98Ga0.02As/ GaAs oxide-confined collector-up heterojunction bipolar transistors"
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volu

S. H. Olsen, A. G. O'Neill, L. S. Driscoll, S. Chattopadhyay, K. S. K. Kwa, A. M. Waite, Y. T. Tang, A. G. R. Evans, J. Zhang
"Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs"
IEEE Transactions on Electron Devices, Vol. 51, Issue 7, July 2004, pp. 1156-1163

S. -Y. Cheng, C. -Y. Chen, J. -Y. Chen, H. -M. Chuang, C. -H. Yen, W. -C. Liu
"Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs graded layers"
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, I

S. -Y. Cheng
"Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1-xAs layer at emitter/base heterojunction"
Solid-State Electronics, Vol. 48, Issue 7, July 2004, pp. 1087-1094

V. Palankovski and S. Selberherr
"Rigorous modeling of high-speed semiconductor devices"
Microelectronics Reliability, Vol. 44, Issue 6, June 2004, pp. 889-897

M. Nawaz, J. M. Miranda, P. Sakalas, S. M. Wang, Q. X. Zhao, M. Willander, H. Zirath
"Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs"
Semiconductor Science and Technology, Vol. 15, Issue 7, July 2000, pp. 728-735

X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, C. R. Abernathy, S. J. Pearton, J. M. Van Hove, J. J. Klaassen, C. J. Polley, A. M Wowchack, P. P. Chow, D. J. King, S. N. Chu
"Common-base operation of GaN bipolar junction transistors"
Electrochemical and Solid-State Letters, Vol. 3, Issue 7, July 2000, pp. 333-334

Y. C. Choi, H.- Y. Cha, L. F. Eastman, M. G. Spencer
"A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: Source inserted double-gate structure with a supplementary highly doped region"
IEEE Transactions on Electron Devices, Vol. 52, Issue 9, September 2005, pp. 1940-1948

R. Sampathkumaran, K. P. Roenker
"Effects of self-heating on the microwave performance of SiGe HBTs"
Solid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1292-1296

S. K. Aggarwal, R. Gupta, S. Haldar, M. Gupta, R. S. Gupta
"A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region"
Solid-State Electronics, Vol. 49, Issue 7, July 2005, pp. 1206-1212

S. Michael
"A novel approach for the modeling of advanced photovoltaic devices using the SILVACO/ATLAS virtual wafer fabrication tools"
Solar Energy Materials and Solar Cells, Vol. 87, Issues 1-4, May 2005, pp. 771-784

S. Michael and A. Bates
"The design and optimization of advanced multijunction solar cells using the Silvaco ATLAS software package"
Solar Energy Materials and Solar Cells, Vol. 87, Issues 1-4, May 2005, pp. 785-794

N. Tanuma, S. Yokokura, T. Matsui, M. Tacano
"Capacitance analysis of Al0.25Ga0.75N/GaN heterostructure barrier varactor diodes"
Physica Status Solidi C: Conferences, Vol. 2, Issue 7, 2005, pp. 2692-2695

A. Rennane, L. Bary, J. L. Roux, J. Kuchenbecker, J. Graffeuil and R. Plana,
"Reliability properties of SiGe HBTs",
Applied Surface Science, Vol. 224, Mar. 2004, pp. 341-346

V. Palankovski and S. Selberherr,
"The state-of-the-art in simulation for optimization of SiGe-HBTs",
Applied Surface Science, Vol. 224, Mar. 2004, pp. 312-319

T. Kudoh and T. Asano
"Si/SiGe heterojunction collector for low loss operation of Trench IGBT"
Applied Surface Science, Vol. 224, Mar. 2004, pp. 399-404

S. Srivastava and K. P. Roenker
"Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode"
Solid-State Electronics, Vol. 48, Mar. 2004, pp. 461-470

Y. J. Song, S. H. Kim, S. H. Lee, H. C. Bae, J. Y. Kang, K. H. Shim, J. -H. Kim, and J. I. Song
"DC and RF characteristics of RPCVD grown modulation doped Si0.8Ge0.2 pMOSFETs"
Solid-State Electronics, Vol. 48, Feb. 2004, pp. 315-320

L. Bednarz, Rashmi, B. Hackens, G. Farhi, V. Bayot, I. Huynen
"Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature"
Solid State Communications, Vol. 134, Issue 3, April 2005, pp. 217-222

K. L. Tsakmakidis, L. Gomez-Rojas, I. D. Robertson, O. Hess, P. A. Houston, B. Weiss
"FDTD modelling of velocity mismatch in travelling-wave heterojunction phototransistor"
Electronics Letters, Vol. 40, Issue 7, April 2004, pp. 452-454

S. Maikap, B. Senapati, C. K. Maiti
"Technology CAD of SiGe-heterojunction field effect transistors"
Defence Science Journal, Vol. 51, Issue 2, April 2001, pp. 195-199

K. Poochinda, T. C. Chen, T. G. Stoebe and N. L. Ricker
"Simulation of GaN and InGaN p-i-n and n-i-n photo-devices"
Journal of Crystal Growth, Vol. 261, Jan. 2004, pp. 336-340

Mauro Encisco, Frederick Aniel, Laurent Gigerre, Thomas Hackbarth, Hans Herzog, Ulf K
"Self-heating effects on strained Si/SiGe n-HFETs"
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1

Lei Ai and Ming-C. Cheng
"Optimization of the Cutoff Frequency for Si 1-x Ge xHBTs"
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1

P. A. Balaraman and K. P. Roenker
"Simulation Study of InP/GaAsSb Double Heterojunction Bipolar Transistors"
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1

R. Magno, J. B. Boos, P. M. Campbell, B.R. Bennet, E. R. Glasser, M. G. Ancona, B. P. Tinkham, D. Park, N. A. Papanicolaou, K. Ikossi, and B. V. Shanabrook
"InAIAsSb/InGaSb Double Heterojunction Bipolar Transistor"
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1

F. G. Della Corte, F. Pezzimenti
"Design Considerations for a-Si:H/SiGe/Si Heterojunction Bipolar Transistors"
IEEE Transactions on Electron Devices Publication Date: Oct. 2003 On page(s): 2180- 2182 Vol.: 50,

F. G. Della Corte, F. Pezzimenti
"Design of a-Si:H/GaAs heterojunction bipolar transistors with improved DC and AC characteristics"
Circuits, Devices and Systems, IEE Proceedings Publication Date: Aug. 2003 On page(s): 350- 360

S. Mil'shteina, P. Erslandb, S. Somisettya, C. Gil
"p-HEMT with tailored field"
Microelectronics Journal, Vol. 34, May 2003, pp. 359-361

L. Bednarz, Rashmi and I. Huynen
"Optimising intrinsic performance of InAlAs/InGaAs Y-branch junction for nonlinear RF operation"
Electronics Letters, Vol. 41, Issue 5, 3 March 2005, pp. 282-283

F. Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th. Hackbarth, H. J. Herzog, U. K. and B. Raynor
"High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET"
Solid-State Electronics, Vol. 47, Issue 2, Feb. 2003, pp. 283-289.

M. B. A. Jalil, Y. Jiang, G. K. L. Goh
"Modeling of a ferromagnetic two-dimensional electron gas device"
IEEE Transactions on Magnetics, Vol. 41, Issue 3, March 2005, pp. 1118-1125

S. -Y. Cheng, C. Y. Chen, J. Y. Chen, W. C. Liu, W.-L. Chang, M. -H. Chiang
"Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers"
Superlattices and Microstructures, Vol. 37, Issue 3, March 2005, pp. 171-183

S. W. Tan, M. K. Hsu, A. H. Lin, M. Y. Chu, W. T. Chen, W. S. Lour
"Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate"
Semiconductor Science and Technology, Vol. 19, Issue 3, March 2004, pp. 384-388

P. Rosales-Quintero, A. Torres-Jacome, R. Murphy-Arteaga, M. Landa-Vázquez
"Electrical characterization of n-type a-SiGe:H/p-type crystalline-silicon heterojunctions"
Semiconductor Science and Technology, Vol. 19, Issue 3, March 2004, pp. 366-372

S. -Y. Cheng, J. -Y. Chen, C. -Y. Chen, H. -M. Chuang, C. -H. Yen, K. -M. Lee, W. -C. Liu
"Comprehensive study of InGaP/AlxGa1-xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1-xAs graded layers"
Semiconductor Science and Technology, Vol. 19, Issue 3, March 2004, pp. 351-358

S. Verghese, K. A. McIntosh, R. J. Molnar, L. J. Mahoney, R. L. Aggarwal, M. W. Geis, K. M. Molvar, E. K. Duerr, I. Melngailis
"GaN avalanche photodiodes operating in linear-gain mode and Geiger mode"
IEEE Transactions on Electron Devices, Vol. 48, Issue 3, March 2001, pp. 502-511

M. Tarplee, V. Madangarli and T. S. Sudarshan
"Comparison of Figures-of-Merit of N and P SiC Schottky Diodes with Ni Schottky Contacts at High Temperatures"
Jpn. J. Appl. Phys., Vol. 41, December 2002, pp. 7322-7326

A. Breed, K. P. Roenker and D. Todorova
"Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p-n junction displacement"
Solid-State Electronics, Voulme 46, Issue 12, Dec. 2002, pp. 2199-2208

D. Todorova, N. Mathur, K. P. Roenker
"Simulation and design of SiGe HBTs for power amplification at 10 GHz"
Solid-State Electronics, Vol. 46, October 2002, pp. 1485-1493

B. G. Malm and M. Mtling
"Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs"
Solid- State Electronics, Vol. 46, Issue 10, Oct. 2002, pp. 1567-1571

Bongyong Lee and Ilgu Yun
"Effect of different etching processes on edge breakdown suppression for planar InP/InGaAs avalanche photodiodes"
Microelectronics Journal, Vol. 33, Issue 8, Aug. 2002, pp. 645-649

Holmes, KL
"Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor"
Naval Postgraduate School, Monterey, CA. Jun 2002. 79p. NTIS ADA404952

F. G. Della Corte and F. Pezzimenti
"Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency"
Journal of Non-Crystalline Solids, Vol.s 299-302, Part 2, April 2002, pp. 1365-1369

J. S. Hamel, et al.
"Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs"
IEEE Trans. Electron Devices, vol.49, No.3, Mar. 2002, pp. 449 - 456

A. Cordat, S. Lardenois, V. Le Thanh and A. Koster
"SiGe/Si multiquantum well structure for light modulation"
Materials Science and Engineering B, Vol. 89, Issues 1-3, 14 February 2002, pp. 66-69.

Yasushi ITOH and Kazuhiko HONJO
"Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communications Systems"
IEICE Trans. Electron., Vol E86-C, No. 2, February 2002, pp. 108-119.

Yee-Chia Yeo, et al.
"Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel"
IEEE Trans. Electron Devices, vol.49, No.2, Feb. 2002, pp. 279-286.

S. Montanari, A. Forster, M. I. Lepsa, H. Lath
"High frequency investigation of graded gap injectors for GaAs Gunn diodes"
Solid-State Electronics, Vol. 49, Issue 2, February 2005, pp. 245-250.

S. K. Mandal, S. Das, C. K. Maiti
"Source engineering in short channel double gate vertical SiGe-MOSFETs"
Materials Science in Semiconductor Processing, Vol. 8, Issue 1-3 SPEC. ISS., February 2005,

S. -Y. Cheng, C. DY. Chen, F. U. Ssu-I, P. -H. Lai, Y. -Y. Tsai, W. -C. Liu
"DC characterization of InP/InGaAs tunneling emitter bipolar transistor"
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

M. J. Kumar, D. V. Rao
"Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications"
IEE Proceedings: Circuits, Devices and Systems, Vol. 151, Issue 1, February 2004, pp. 63-67

Cheng, T., Greer, J. C.
"Side gating in silicon germanium hetero-dimensional field effect transistors"
Microelectronic Engineering, Vol. 71, Issue 2, February 2004, pp. 197-208

Deepak, P. A. Blakey, K. Johnson
"TCAD simulation of ion implantation test for controlling quality of GaAs substrates used for fabricating implanted devices"
Journal of Electronic Materials, Vol. 30, Issue 2, February 2001, pp. 70-77

C. H. Yi, Robert A. Metzger and April S. Brown
"The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors"
Journal of Electronic Materials, Vol. 31, No. 8, 2002, pp. 841-847

S. Lee, N. J. Song, J. Burm, C. An
"4H-SiC MESFET large-signal modeling using modified Materka model"
Materials Science Forum, Vol. 389-393, No. 2, 2002, pp. 1399-1402.

B. Gunnar Malm, et al.
"Ge-profile design for improved linearity of SiGe Double HBTs"
IEEE Electron Device Letters, vol.23, No.1, Jan. 2002, pp. 19 - 21

Giovanna Sozzi and Roberto Menozzi
"High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study"
Microelectronics Reliability, Vol. 42, Issue 1, January 2002, pp. 53-59

Jochen Eberhardt and Erich Kasper
"Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times"
Solid-State Electronics, Vol. 45, Issue 12, December 2001, pp. 2097-2100

S. KARMALKAR and Umesh Mishra
"Very high voltage AlGaN / GaN HEMTs using a field-plate deposited on a stepped insulator"
Solid-State Electron., vol. 45, pp.1645-1652, September 2001.

D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, and C. Canali
"Electric-field-related reliability of algaas/gaas power hfets: Bias dependence and correlation with breakdown"
IEEE Transactions On Electron Devices, 48(9):1929-1937, September 2001

S. KARMALKAR, J. Deng, M. S. Shur and R. Gaska
"RESURF AlGaN / GaN HEMT for very high voltage power switching"
IEEE Electron Device Lett., vol. 22, pp. 373-375, August 2001

S. KARMALKAR and Umesh Mishra
"Enhancement of Breakdown Voltage in AlGaN / GaN High Electron Mobility Transistors Using A Field Plate"
IEEE Trans. Electron Devices, vol. 48, pp.1515-1521, August 2001.

Y. Tan, J. J. Liou, Joerg Gessner and F. Schwierz
"Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation"
Solid-State Electronics, Vol. 45, Issue 5, May 2001, pp. 727-734

G. Torrese, I. Huynen and A. Vander Vorst,
"Design criteria for increasing the bandwidth - Efficiency product of GaAs p-i-n photodetectors"
Microwave and Optical Technology Letters, Vol. 29, May 2001, pp. 150-155.

C. Maneux, N. Labat, N. Malbert, A. Touboul, Y. Danto, J. -M. Dumas, M. Riet and J. L. Benchimol
"Experimental procedure for the evaluation of GaAs-based HBT's reliability"
Microelectronics Journal, Vol. 32, Issue 4, 1 April 2001, pp. 357-371

J. Ludwig, J. Andersson, D. Bryman, J. Cresswell, M. Constable, R. Irsigler, R. Goeppert, M. Hornung, S. Passmore, M. Rogalla, K. Runge, C. Schwarz
"Development of GaAs-CCDs for X-ray detection"
Nuclear Instruments and Methods in Physics Research A, Vol. 460, March 2001, pp. 72-75.

Eimers, KP
"2-D Modeling of GaN HEMTS Incorporating the Piezoelectric Effect"
Naval Postgraduate School, Monterey, CA. Mar 2001. 72 pp. NTIS ADA389892

P. Bhatnagar, A. B. Horsfall, N. G. Wright, et al
"Effective edge termination design in SiCVJFET"
Materials Science Forum, Vol. 483, 2005, pp. 877-880

J. Steszewski and A. Jakubowski
"Modeling I-V characteristics of 4H-SiC and 6H-SiC MOSFETs"
Elektronika, Vol. 46, No. 2-3, 2005, pp. 25-6 (Language: in Polish)

K. L. Tsakmakidis, L. Gomez-Rojas, I. D. Robertson, O. Hess, P. A. Houston, B. Weiss
"FDTD modelling of an InP traveling-wave HPT"
Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5451, 2004, pp. 4

A. Bates and S. Michael
"The design and optimization of an advanced four junction solar cell"
A Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit

A. L. Crespin and S. Michael
"Modeling the effects of electron radiation in solar cells"
A Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit

T. Naeve, M. Hohenbild, P. Seegebrecht
"A quasi-2-dimensional photodiode model for high-speed short-wavelength applications"
The 12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applicat

P. J. Niu, H. W. Liu ,W. L. Guo, X. Y. Li
"Characteristics analysis of AlGaAs/GaAs resonant tunneling diode by device simulation"
Micronanoelectronic Technology, Vol. 41, No. 10, 2004, pp. 15-28 (in Chinese)

F. Aniel, M. Enciso-Aguilar, M. Rodriguez, N. Zerounian, P. Crozat, T. Hackbarth, J. H. Herzog
"Noise in Si/SiGe and Ge/SiGe MODFET"
Proceedings of SPIE - The International Society for Optical Engineering, v 5470, Noise in Devices a

F. M. De Paola, V. D'Alessandro, A. Irace, J. H. Den Besten, M. K. Smit
"Numerical simulations for the analysis of the dynamical behaviour of an ultra-fast InP/InGaAsP optoelectronic modulator"
Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5451, 2004, pp. 5

G. H. Song, H. W. Kim, W. Bahng, S. C. Kim, N. K. Kim
"4H-SiC P-N diode using internal ring(IR) termination technique"
Materials Science Forum, Vol. 457-460, Issue II, 2004, pp. 1041-1044

S. K. Mandal, G. K. Marskole, K. S. Chari, C. K. Maiti
"Transit time components of a SiGe-HBT at low temperature"
Proceedings of the International Conference on Microelectronics, Vol. 24 I, 2004, pp. 315-318.

H. W. Kim, W. Bahng, G. H. Song, S. C. Kim, N. K. Kim, E. D. Kim
"Edge termination technique for SiC power devices"
Materials Science Forum, Vol. 457-460, Issue II, 2004, pp. 1241-1244

S. -Y. Cheng, C. -Y. Chen, J. -Y. Chen, H. -M. Chuang, W. -C. Liu, W. -L. Chang, H. -J. Pan, P. -C. Chen
"Comprehensive analysis of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with different thickness of setback layers"
Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5276, 2004, pp. 3

R. Magno, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, M. G. Ancona, B. P. Tinkham, D. Park, N. A. Papanicolaou, K. Ikossi, B. V. Shanabrook, S. E. Mohney
"InAlAsSb/InGaSb double heterojunction bipolar transistor"
2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741), 2003, pp. 202

M. J. Kumar and C. L. Reddy
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C. A. Barrios, C. I. Thomas, M. Spencer, M. Lipson
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K. P. Roenker, R. Flenniken, P. B. Kosel, P. B.
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F. Pezzimenti and F. G. Della Corte
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Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5117, 2003, pp. 5

P. Michalopoulos and S. Michael
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Midwest Symposium on Circuits and Systems, Vol. 2, 2002

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T. H. Prettyman, F. P. Ameduri, A. Burger, J. C. Gregory, M. A. Hoffbauer, P. R. Majerus, D. B. Reisenfeld, S. A. Soldner, C. Szeles
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F. G. Della Corte, T. Polichetti, A. Rubino, and G. Cocorullo
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Sunghoon Kim, Kyunghae Kim, Junsin Yi, Hoongjoo Lee, and Byungryul Ryum
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Proceeding of the 2nd International Conference on Microwave and Millimeter Wave Technology, 2000

F. G. Della Corte, T. Polichetti, A. Rubino, and G. Cocorullo
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Jae Kyoung Mun, Jong Won Lim, Jae Jin Lee and Jeon Wook Yang
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A. Rusani, J. Kuchenbecker, M. Norgarino, R. Plana, J. Graffeuil, and M. Vanzi
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S. D. Lee, J. G. Heo, S. H. Yang, and J. K. Rhee
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C.W. Hatfield, G.L. Bilbro, S.T. Allen, and J.W. Palmour
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IEEE Transactions On Electron Devices, 45(9):2072-2074, September 1998

N. E. Islam, E. Schamiloglu, C. B. Fleddermann, R. P. Joshi and L. Zheng
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Proceedings of the 1998 IEEE International Conference on Plasma Science, Jun 1-4 1998, Raleigh, NC

M. Y. A. Yousif, O. Nur, O. Chretien, Y. Fu and M. Willander
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Lars-Erik Wernersson, Andrej Litwin, Lars Samuelson and Hongqi Xu
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T. Holden, W. D. Sun, F. H. Pollak, J. L. Freeouf, D. McInturff, and J. M. Woodall
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V. Kaper, F. Gao, and P. Ersland
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