Published Papers

Compound Devices

The full text for most of these papers may be found at the IEEE website at www.ieee.org.

N. Seoane1, M. Aldegunde1, K. Kalna1 and A. J. Garcia-Loureiro2
"MC/DD study of Metal Grain Induced Currenct Variability in a Nanoscale InGaAs FinFET",

  1. Electronic Systems Design Centre, College of Engineering, Swansea University, Swansea SA2 8PP,
    United Kingdom
  2. CITIUS University of Santiago de Compostela, 15782 Santiago de Compostela, Spain

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014, pp.253-256

 

T. Ohashi1, K. Suda2, S. Ishihara2, N. Sawamoto2, S. Yamaguchi1, K. Matsuura1, K. Kakushima1, N. Sugii1, A. Nishiyama1, Y. Kataoka1, K. Natori1, K. Tsutsui1, H. Iwai1,A. Ogura2 and H. Wakabayashi1,
"Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs",

  1. Tokyo Institute of Technology 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
  2. Meiji University, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan

International Conference on Solid State Devices and Materials (SSDM) 2014, pp.1074-1075

Copyright 2014 The Japan Society of Applied Physics

 

Xiaoli Ji1, Baiqing Liu1, Hengjing Tang2,3, Xue Li2,3, Ming Shi2,3, Ying Zhou1, Yue Xua, Haimei Gong2,3 and Feng Yan1,
"The improvement of surface current of 2.6 μm InGaAs photodetectors by using ICPCVD technology",

  1. College of electronic science & engineering, Nanjing University, Nanjing 210093, China
  2. Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  3. State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

International Conference on Solid State Devices and Materials (SSDM) 2014, pp.170-171

Copyright 2014 The Japan Society of Applied Physics

 

Toshiyuki Oishi1, Kazuo Hayashi1, Hajime Sasaki1, Yutaro Yamaguchi1, Koon Hoo Teo2, Hiroshi Otsuka1, Koji Yamanaka1, Masatoshi Nakayama1 and Yasuyuki Miyamoto3,
"Simulation study of gate leakage current under three-terminal operation for AlGaN/GaN HEMTs",

  1. Mitsubishi Electric Corporation, Japan
  2. Mitsubishi Electric Research Laboratories (MERL), USA
  3. Department of Physical Electronics, Tokyo Institute of Technology, Japan

Kazuhiro Mochizuki and Natsuki Yokoyama,
"Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted in 4H-SiC (0001)",
IEEE Trans. on Electron Devices, Vol. 58, No.2, p.455, 2011.

R.P. Jackson, S.J.N. Mitchell, V. Fusco,
"Physical modeling of millimetre wave signal reflection from forward biased PIN diodes",
Solid-State Electronics, Vol. 54, Issue 2, February 2010, pp. 149-152.

Min-Chang Tu, Herng-Yih Ueng, Yu-Chi Wang,
"Performance of High-Reliability and High-Linearity InGaP/GaAs HBT PAs for Wireless Communication",
IEEE Transactions on Electron Devices, Vol. 57 , Issue: 1, 2010, pp. 188 - 194.

Yuehang Xu, Yunchuan Guo, Yunqiu Wu, Ruimin Xu, Bo Yan,
"Characterization of high-frequency noise performance of GaN double heterojunction HEMT",
2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010, pp. 1606 - 1609.

L.N. Ismail, M.A. Pawet, P. S. Mohamad Saad, A. S. Zoolfakar,
"Failure mechanism of silicon germanium (SiGe) technology on 90nm PMOS",
2010 Intl Conf on Electronic Devices, Systems and Applications (ICEDSA), 2010, pp. 352 - 356.

A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun,
"Characteristics degradation of the SiGe HBT under electromagnetic field stress",
Microelectronics Reliability, In Press, Corrected Proof, Available online 24 July 2010.

Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo,
"A model for the critical voltage for electrical degradation of GaN high electron mobility transistors",
Microelectronics Reliability, Vol. 50, Issue 6, June 2010, pp. 767-773.

M. Bawedin, M.J. Uren, F. Udrea,
"DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT",
Solid-State Electronics, Vol. 54, Issue 6, June 2010, pp. 616-620.

Ritesh Gupta, Servin Rathi, Mridula Gupta, R.S. Gupta,
"Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation",
Superlattices and Microstructures, Vol. 47, Issue 6, June 2010, pp. 779-794.

Zheng Li, V. Eremin, J. Harkonen, P. Luukka, E. Tuominen, E. Tuovinen, E. Verbitskaya,
"Modeling, simulation and data fitting of the charge injected diodes (CID) for SLHC tracking applications",
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 617, Issues 1-3, 11 May 2010-21 May 2010, pp. 552-557.

Woo Young Choi,
"Applications of impact-ionization metal–oxide-semiconductor (I-MOS) devices to circuit design",
Current Applied Physics, Vol. 10, Issue 2, March 2010, pp. 444-451.

Chi-Woo Lee, Aryan Afzalian, Isabelle Ferain, Ran Yan, Nima Dehdashti Akhavan, Weize Xiong, Jean-Pierre Colinge,
"Influence of gate misalignment on the electrical characteristics of MuGFETS",
Solid-State Electronics, Vol. 54, Issue 3, March 2010, pp. 226-230.

Servin Rathi, Jyotika Jogi, Mridula Gupta, R.S. Gupta,
"Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs–InGaAs symmetric double-gate HEMT",
Microelectronics Reliability, Vol. 49, Issue 12, December 2009, pp. 1508-1514.

M.C. Tu, Y.C. Wang, H.Y. Ueng,
"Linearity optimizing on HBT power amplifier design",
Microelectronics Journal, In Press, Corrected Proof, Available online 20 September 2009.

S. Mil'shtein, A. Churi, C. Gil,
"Is HEMT operating in 2D mode?",
Microelectronics Journal, Vol. 40, Issue 3, March 2009, pp. 554-557.

Ritesh Gupta, Servin Rathi, Ravneet Kaur, Mridula Gupta, R.S. Gupta,
"T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers",
Superlattices and Microstructures, Vol. 45, Issue 3, March 2009, pp. 105-116.

L. Korte, A. Laades, K. Lauer, R. Stangl, D. Schaffarzik, M. Schmidt,
"Surface photovoltage investigation of recombination at the a-Si/c-Si heterojunction",
Thin Solid Films, In Press, Corrected Proof, Available online 21 February 2009.

Juan M Lopez-Gonzalez, Michael Schröter,
"Study of emitter width effects on βF , ƒT and ƒmax of 200 GHz SiGe HBTs by DD, HD and EB device simulation"
2009 Semicond. Sci. Technol. 24 115005.

Samrat L. Sabat, Leandro dos Santos Coelho, Ajith Abraham,
"MESFET DC model parameter extraction using Quantum Particle Swarm Optimization",
Microelectronics Reliability, Vol. 49, Issue 6, June 2009, pp. 660-666.

A. S. Zoolfakar, A. Ahmad,
"Holes mobility enhancement using strained silicon, SiGe technology",
5th International Colloquium on Signal Processing & Its Applications, CSPA 2009. 6-8 March 2009, pp. 346-349.

Yuehang Xu, Yunchuan Guo, Yunqui Wu, Ruimin Xu, Bo Yan,
"Influence of the Al mole fraction on microwave noise performance of AlxGa1-xN/GaN HEMTs",
International Conference on Communications, Circuits and Systems, ICCCAS 2009. 23-25 July 2009, pp. 759-761.

L.-E. Wernersson, M. Ärlelid, M. Egard, E. Lind,
"Gated tunnel diode in oscillator applications with high frequency tuning",
Solid-State Electronics, Vol. 53, Issue 3, March 2009, pp. 292-296.

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang,
"Microwave complementary doped-channel field-effect transistors",
Superlattices and Microstructures, Vol. 45, Issue 1, January 2009, pp. 33-38.

L. Korte, A. Laades, K. Lauer, R. Stangl, D. Schaffarzik, M. Schmidt,
"Surface photovoltage investigation of recombination at the a-Si/c-Si heterojunction",
Thin Solid Films, Vol. 517, Issue 23, 1 October 2009, pp. 6396-6400

Abdelkader Aliane, F. De Moro, C. Pigot, P. Agnese, X. de la Broise, A. Gasse, X.-F. Navick, M. Karolak, H. Ribot, J. -L. Sauvageot, V. Szeflinski, Y. Gobil, D. Renaud, P. Rivallin, H. Geoffray,
"X-ray micro-calorimeter based on Si thermistors for X-ray astronomy: Design and first measurements",
Journal of Low Temperature Physics, Proceedings of the 12th International Workshop on Low Temperature Dectectors (LTD12), Vol. 151, No. 1-2 PART 1, April, 2008, Pages 381-386.

J. Vobecky, P. Hazdra,
"Dynamic avalanche in diodes with local lifetime control by means of palladium",
Microelectronics Journal, Vol. 39, Issue 6, Jun. 2008, pg 878-883.

Enrico Furno, Francesco Bertazzi, Michele Goano, Giovanni Ghione, Enrico Bellotti,
"Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation",
Solid-State Electronics, Vol. 52, Issue 11, November 2008, pp. 1796-1801.

B. B. Khina,
"An extended "five-stream" model for diffusion of donor and acceptor dopants in Si during the production of ultrashallow π-v junctions",
Proceedings of the SPIE - The International Society for Optical Engineering, Vol. 7377, 2008, pp. 737713-73778.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R.S. Gupta,
"Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency",
Microelectronics Journal, Vol. 39, Issue 12, December 2008, pp. 1416-1424.

N. Gaurav, S. Bhatnagar, R. Raj, S.De, S. Niranjana, B. S. Satyanarayana,
"Nanocluster carbon thin film as a semiconducting layer and feasibility for device application",
Computing, Communication and Networking, 2008. ICCCn 2008. International Conference on 18-20 Dec. 2008 pp. 1 - 5.

M. Mohiuddin, S. Arshad, A. Bouloukou, M. Missous,
"2-D Physical Modelling of δ-doped GaAs/AlGaAs HEMT",
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on 12-16 Oct. 2008 pp. 207 - 210.

Tarun Vir Singh, M. Jagadesh Kumar,
"Effect of the Ge mole fraction on the formation of a conduction path in cylindrical strained-silicon-on-SiGe MOSFETs",
Superlattices and Microstructures, Vol. 44, Issue 1, Jul. 2008, pp. 79-85.

Fortunato Pezzimenti, Francesco G. Della Corte, Roberta Nipoti,
"Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour"
Microelectronics Journal, In Press, Corrected Proof, Available online 21 March 2008.

James G. Champlain, Richard Magno, Mario Ancona, Harvey S. Newman, J. Brad Boos,
"InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material",
Solid-State Electronics, Vol. 52, Issue 11, November 2008, pp. 1829-1832.

F. Amir, N.Farrington, T. Tauqeer, M. Missous,
"Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance",
2008 International Conference on Advanced Semiconductor Devices and Microsystems, pp. 51-54, 2008.

Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang,
"Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures",
Solid-State Electronics, Vol. 52, Issue 7, Jul. 2008, pp. 1018-1023.

Xiaochuan Deng, Bo Zhang, Zhaoji Li and ZhuangLiang Chen,
"Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs",
Microelectronic Engineering, Vol. 85, Issue 2, February 2008, pp. 295-299.

B. A. Polash, M. A. Huque, S. K. Islam, H. Huq,
"High temperature performance measurement and analysis of GaN HEMTs",
Proceedings of the SPIE - The International Society for Optical Engineering, Vol. 6894, 7 Feb. 2008, pp. 68941J-1-9.

T. Bieniek, J. Steszewski, M. Sochacki, J. Szmidt,
"Electrical simulations of SiC Schottky diodes, Resurf JFET and Resurf MOSFET on silicon carbide substrate (SIC)"
Elektronika, Vol. 49, No. 7-8, 2008, pp. 11-15.

M. Tayel, A. Alexandria Elgendy,
"An Analytical DC model with self-heating effect for microwave AlGaN/GaN high electron mobility transistores",
Engineering Journal. 2007, Vol. 45, No. 6, pp.. 675-680.

In-Ho Kang, Wook Bahng, Sang-Cheol Kim, Sung-Jae Joo, Nam-Kyun Kim,
"Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET having Various Delta-Doping Concentrations",
Materials Science Forum. 2007, Vol. 556-557, pp. 823-826.

N. Zerounian, M. Enciso-Aguilar, T. Hackbarth, H.-J. Herzog and F. Aniel,
"Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET",
Solid-State Electronics, Vol. 51, Issue 3, March 2007, pp. 449-459.

Xue-Jun Zheng, Jun-Jie Zhang, Yi-Chun Zhou, Ming-Hua Tang, Bo Yang, Yi-Qiang Chen,
"Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco/Atlas",
Transactions of the Nonferrous Metals Society of China. Vol. 17, No. Special 1, pp. s752-s755. Dec. 2007.

B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand and L. Clavelier,
"Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study"
Semiconductor Science and Technology 22 (3), art. No. 011, pp. 237-244, 30 January 2007.

P. Mistry, I. Gomez-Morilla, R.C. Smith, D. Thomson, G.W. Grime, R.P. Webb, R. Gwilliam, C. Jeynes, A. Cansell, M. Merchant and K.J. Kirkby,
"Maskless proton beam writing in gallium arsenide",
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 260, Issue 1, July 2007, pp. 437-441.

In-Ho Kang, Wook Bahng, Sang-Cheol Kim, Sung-Jae Joo, Nam-Kyun Kim,
"Numerical investigation of the DC and RF performances for a 4H-SiC double delta-doped channel MESFET having various delta-doping concentrations",
Materials Science Forum, Vol. 556-557, 2007, pp. 823-826.

B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand and L. Clavelier,
"Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study"
Semiconductor Science and Technology 22 (3), art. No. 011, pp. 237-244, 30 January 2007.

Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng and Chien-Ming Li,
"Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure",
Microelectronics Journal, Vol. 38, Issues 6-7, June-July 2007, pp. 750-753.

W. A. Gibson,
"Comparison of Gallium Nitride High Electron Mobility Transistors Modeling in Two and Three Dimensions",
Naval Postgraduate School, Monterey, CA., Dec 2007, pp. 77.

Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta and R.S. Gupta,
"Two-dimensional subthreshold analysis of sub-micron GaN MESFET",
Microelectronics Journal, Vol. 38, Issues 4-5, April-May 2007, pp. 547-555.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta and R.S. Gupta,
"Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation",
Microelectronics Journal, Vol. 38, Issues 10-11, October-November 2007, pp. 1013-1020.

José María Tirado, José Luis Sánchez-Rojas, and José Ignacio Izpura
"Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices",

Jung Gil Yang, Sunkyu Choi, Yongsik Jeong, Kyounghoon Yang,
"Theoretical and experimental study of the InP/InGaAs PIN diode for millimeter-wave MMIC applications",
2007 International Conference on Indium Phosphide and Related Materials, 2007, pp. 133-136.

Francesco G. Della Corte, Fortunato Pezzimenti and Roberta Nipoti,
"Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes",
Microelectronics Journal, Vol. 38, Issue 12, December 2007, pp. 1273-1279.

M. De Laurentis, F. M. De Paola, V. d'Alessandro, A. Irace, and G. Breglio,
"InP/InGaAsP electrically controlled Bragg modulator for over 40-Gbit/s modulation speed"
Jul. 6, 2006 Proceedings of SPIE - The International Society for Optical Engineering 6350, art. No. 63500E.

Shadi A. Dayeh, David P. R. Aplin, Xiaotian Zhou, Paul K. L. Yu, Prof., Edward T. Yu, Prof., Deli Wang, Prof.,
"High Electron Mobility InAs Nanowire Field-Effect Transistors"
Small Vol. 3, Issue 2, pp. 326 - 332 Published 5 Dec 2006

I. Chakarov and M. Temkin,
"Modeling of Ion Implanatation in SiC Crystals",
Nucllear Intstruments Methods Physics Research B, Beam Interactactions Materials Atoms, Vol. 242, No.1/2, Jan. 2006, pp. 690-692.

S. S. Mane, S. Hameeda, A. R. Sahaa and C. K. Maiti,
"Modeling of low temperature SiGe oxidation"
Materials Science in Semiconductor Processing Vol. 9, Issues 4-5, August-October 2006, pp. 668-672.

F. Cappelluti, F. Bonani, M. Furno, G. Ghione, R. Carta, L. Bellemo, C. Bocchiola, L. Merlin,
"Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes"
Microelectronics Journal, Vol. 37, Issue 3, March 2006, pp. 190-196.

T. Munir, A. A. Aziz, M. J. Abdullah,
"Epilayer Thickness and Doping Density Variation Effects on Current-Voltage (I-V) Characteristics of n-GaN Schottky Diode",
IEEE International Conference on Semiconductor Electronics, 2006. ICSE
'06. Oct. 29 2006 - Dec. 1 2006, pp. 892 - 895.

M. Philip, A. O'Neill,
"Calibration of 4H-SiC TCAD Models and Material Parameters"
2006 Conference on Optoelectronic and Microelectronic Materials and
Devices, 6-8 Dec. 2006, pp. 137 - 140.

A. R. Saha, C. K. Maiti,
"Technology CAD for germanium CMOS circuit"
18 September 2006 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 135 (3), pp. 261-266.

T. Munir, A. Abdullah, M. J. Abdulaziz, N. M. Ahmed,
"Concentration efects on n-GaN schottky diode current-voltage (i-v) characteristics",
Materials Science Forum. Vol. 517, pp. 159-164. 2006.

L. O. San Vicente, J. M. Lopez-Gonzalez, A. Garcia-Loureiro,
"Numerical simulation of new InP/GaAsSb-DHBTs using ATLAS",
Spanish Conference on Electron Devices, 2005 2-4 Feb. 2005, pp. 187 - 189.

L.-H. Chong, K. Mallik, C. H. De Groot,
"The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device"
Microelectronic Engineering, Vol. 81, Issue 2-4, August 2005, pp. 171-180.

M. Balucani, V. N. Dobrovolsky, A. V. Osipov, A. Ferrari,
"Model of the drain current saturation in long-gate JFETs and MESFETs"
Solid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1251-1254.

J. Urresti, S. Hidalgo, D. Flores, J. Roig, J. Rebollo, I. Mazarredo,
"A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices"
Solid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1309-1313.

R. Ragi, M. A. Romero, B. Nabet,
"Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices"
IEEE Transactions on Electron Devices, Vol. 52, Issue 2, February 2005, pp. 170-175.

P. Bhatnagar, A. B. Horsfall, N. G. Wright, et al.,
"Effective edge termination design in SiCVJFET"
Materials Science Forum, Vol. 483, 2005, pp. 877-880.

J. Steszewski and A. Jakubowski,
"Modeling I-V characteristics of 4H-SiC and 6H-SiC MOSFETs"
Elektronika, Vol. 46, No. 2-3, 2005, pp. 25-6 (Language: in Polish).

M. B. A. Jalil, Y. Jiang, G. K. L. Goh,
"Modeling of a ferromagnetic two-dimensional electron gas device"
IEEE Transactions on Magnetics, Vol. 41, Issue 3, March 2005, pp. 1118-1125.

S. -Y. Cheng, C. Y. Chen, J. Y. Chen, W. C. Liu, W.-L. Chang, M. -H. Chiang,
"Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers"
Superlattices and Microstructures, Vol. 37, Issue 3, March 2005, pp. 171-183.

S. Montanari, A. Forster, M. I. Lepsa, H. Lath,
"High frequency investigation of graded gap injectors for GaAs Gunn diodes"
Solid-State Electronics, Vol. 49, Issue 2, February 2005, pp. 245-250.

S. K. Mandal, S. Das, C. K. Maiti,
"Source engineering in short channel double gate vertical SiGe-MOSFETs"
Materials Science in Semiconductor Processing, Vol. 8, Issue 1-3, pp. 353--357, SPEC. ISS., February 2005.

Y. C. Choi, H.- Y. Cha, L. F. Eastman, M. G. Spencer,
"A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: Source inserted double-gate structure with a supplementary highly doped region"
IEEE Transactions on Electron Devices, Vol. 52, Issue 9, September 2005, pp. 1940-1948.

R. Sampathkumaran, K. P. Roenker,
"Effects of self-heating on the microwave performance of SiGe HBTs"
Solid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1292-1296.

S. K. Aggarwal, R. Gupta, S. Haldar, M. Gupta, R. S. Gupta,
"A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region"
Solid-State Electronics, Vol. 49, Issue 7, July 2005, pp. 1206-1212.

L. Bednarz, Rashmi and I. Huynen,
"Optimising intrinsic performance of InAlAs/InGaAs Y-branch junction for nonlinear RF operation"
Electronics Letters, Vol. 41, Issue 5, 3 March 2005, pp. 282-283.

S. Michael,
"A novel approach for the modeling of advanced photovoltaic devices using the SILVACO/ATLAS virtual wafer fabrication tools"
Solar Energy Materials and Solar Cells, Vol. 87, Issues 1-4, May 2005, pp. 771-784.

S. -Y. Cheng, C. DY. Chen, F. U. Ssu-I, P. -H. Lai, Y. -Y. Tsai, W. -C. Liu,
"DC characterization of InP/InGaAs tunneling emitter bipolar transistor"
Japanese Journal of Applied Physics, 2005, Vol. 44, pp. 824-827.

S. Michael and A. Bates,
"The design and optimization of advanced multijunction solar cells using the Silvaco ATLAS software package"
Solar Energy Materials and Solar Cells, Vol. 87, Issues 1-4, May 2005, pp. 785-794.

L. Bednarz, Rashmi, B. Hackens, G. Farhi, V. Bayot, I. Huynen,
"Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature"
Solid State Communications, Vol. 134, Issue 3, April 2005, pp. 217-222.

N. Tanuma, S. Yokokura, T. Matsui, M. Tacano,
"Capacitance analysis of Al0.25Ga0.75N/GaN heterostructure barrier varactor diodes"
Physica Status Solidi C: Conferences, Vol. 2, Issue 7, 2005, pp. 2692-2695.

C. Piemonte, M. Boscardin, G. F. Dalla Betta, S. Ronchin, N. Zorzi,
"Development of 3D detectors featuring columnar electrodes of the same doping type"
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, Vol. Issues 1-2, 541, pp. 441-448.

A. Bates and S. Michael,
"The design and optimization of an advanced four junction solar cell"
A Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit, 2005, Vol. 87, pp. 785-794.

A. L. Crespin and S. Michael,
"Modeling the effects of electron radiation in solar cells"
A Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit, 2005, pp. 782-785.

T. Naeve, M. Hohenbild, P. Seegebrecht,
"A quasi-2-dimensional photodiode model for high-speed short-wavelength applications"
The 12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004, pp. 66-70.

S. H. Olsen, A. G. O'Neill, S. Chattopadhyay, L. S. Driscoll, K. S. K. Kwa, D. J. Norris, A. G. Cullis, D. J. Paul,
"Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs"
IEEE Transactions on Electron Devices, Vol. 51, Issue 8, August 2004, pp. 1245-1253.

B. Lee, H. Yoon, K. S. Hyun, Y. H. Kwon, I. Yun,
"Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers"
Microelectronics Journal, Vol. 35, Issue 8, August 2004, pp. 635-640.

S. -Y. Cheng, C. -Y. Chen, J. -Y. Chen, H. -M. Chuang, C. -H. Yen, W. -C. Liu,
"Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs graded layers"
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2004, Vol. 22, Issue 4, pp. 1699-1704.

S. H. Olsen, A. G. O'Neill, L. S. Driscoll, S. Chattopadhyay, K. S. K. Kwa, A. M. Waite, Y. T. Tang, A. G. R. Evans, J. Zhang,
"Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs"
IEEE Transactions on Electron Devices, Vol. 51, Issue 7, July 2004, pp. 1156-1163.

W. -B. Chen, Y. -K. Su, C. -L. Lin, H. -C. Wang, H.-C. Yu, S. -M. Chen, J. -Y. Su,
"Simulation and fabrication of InGaP/Al0.98Ga0.02As/ GaAs oxide-confined collector-up heterojunction bipolar transistors"
Japanese Journal of Applied Physics, 2004, Vol. 43, Issue 8A, pp. 5174.

S. -Y. Cheng,
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Hamel J.S. Tang Y.T.,
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M. Murtagh, J. T. Beechinor, N. Cordero, P. V. Kelly, G. M. Crean and S. W. Bland,
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S.K. Jones, S.P. Marsh and W.A. Phillips,
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M. Tarplee, V. Madangarli, Q. Zhang, P. R. Palmer and T. S. Sudarshan,
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S. D. Lee, J. G. Heo, S. H. Yang, and J. K. Rhee,
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N. G. Wright, C. M. Johnson, A. G. O'Neill,
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Gabriela E. Bunea, S.T. Dunham and T.D. Moustahas,
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A. Rusani, J. Kuchenbecker, M. Norgarino, R. Plana, J. Graffeuil, and M. Vanzi,
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Lars-Erik Wernersson, Andrej Litwin, Lars Samuelson and Hongqi Xu,
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T. Holden, W. D. Sun, F. H. Pollak, J. L. Freeouf, D. McInturff, and J. M. Woodall,
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C. K. Maiti and G. A. Armstrong,
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Andrew J Panks, Christopher M Snowden and Michael J Howes,
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Voinigescu, Rabkin, Salama, Blakey,
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