Contents:

• Outline
• Standard diffusion models
• FERMI diffusion model
• ATHENA overlay: Low temperature boron transient enhanced diffusion
• Current diffusion models
• Effect of implant damage
• Advanced diffusion models: Overview
• Stanford high concentration model
• <311> RTA model
• <311> cluster injection
• Dislocation loop sinks
• Implant damage
• Distribution of phosphorous and defect after ion implantation
• Applications and calibration of the <311> cluster model
• RTA diffusion of boron and phosphorous
• Movie of interstitial generation, recombination and redistribution
• RTA simulation matched to experimental datain [3]
• Simulation from Figure 1 with lower TAU.311.0
• Conclusion

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