Contents

• Outline
• Some interesting dates in history of Ion Implantation Modeling
• Ion channeling
• Ion implantation:
  • 1970 sample, 120 keV P into Si, 7o to <111> direction
  • 1975 sample, 100 keV B into Si02
  • 1987 sample, 50 keV P into (100) Si
• Classification of simulation models
• Different orientation of silicon crystal structure
• Time scale
• Hierarchy of ion implantation/radiation damage models
• Basic concepts of implantation (II)
• Scattering dynamic in a collision event
• Nuclear & electronic stopping of boron in amorphous silicon
• Electronic energy loss
• Z₁ Oscillations of electronic stopping
  • Example
• Velocity dependence seperation of local & non-local e-stopping in Silvaco's BCA implant program
• 80 keV boron -> c-Si, Native Oxide
• 15 keV boron -> c-Si, Native Oxide
• Low-energy model (see the 'round robin' comparisons)
• Nature of the physical problem
• Damage accumulation model
• Low energy corrections to Silvaco's ion implantation program
• Statistical sampling
• SIMS vs implant modeling (after Michael Duane)
• Low energy model:
  • 1 keV As into (100) Si, tilt=0