Contents

• Overview
• Structure creation
  • Structure creation overview
  • Tools
  • Processing
  • Editing
  • Meshing
• Device simulation
  • Device simulation overview
  • Boundary conditions
  • Physics
  • Numerics
  • Lifetime tailoring
  • Mixed Mode
• Examples
  • Examples overview
  • Insulated gate bipolar transistor
    • Simulation of an insulated gate bipolar transistor
    • Simulated Ic vs Vce characteristics of the IGBT
    • Simulation of latchup of a IGBT effect of a 10us pulse on the gate
    • Two-dimensional distribution of lattice temperature
    • Gate controlled thyristor
      • Simulation of a gate controlled thyristor structure
      • Effect of gate voltage on the thyristor latch voltage
    • Vertical double-diffused MOS transistor
      • Simulation of a vertical double-diffused MOS transistor
      • Gate characteristics of the vertical DMOS transistor
      • Variation of capacitance with drain voltage of vertical DMOS
      • Transient ramp applied to gate contact
      • Variation of collector current during transient
      • Variation of maximum lattice temperature during transient
  • Conclusions

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