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| Blaze workshop |
Contents:
Requirements for III-V device simulation:
- Blaze as part of a complete simulation toolset
- The 10 essential components of III-V device simulation
- Material parameters and models
Blaze applications
- Introduction
- Blaze features
Simulation of III-V device with Blaze
- Overview
- Information flow
- Applications
- Heterostructure specification
- Device specification using DevEdit
- DevEdit meshing features
- III-V material specification
- Saving designed structures
- Material specification
- ATLAS/Blaze references
- Material and model specification
- Schottky contact specification
- Material specification
- Model specification
- Advanced models
- Solution techniques
Case study - HBT
- Case Study - HBT
- HBT created in DevEdit
- HBT cutline from emitter to collector
- HBT gummel plot
- HBT cut-off frequency
- HBT 4 quadrant smith chart
Case study - PHEMT
- Case study - PHEMT
- Structure and doping profile
- Band structure through gate
- Energy balance shows accurate gate current
- HFET subthreshold characteristic
- HFET transconductance
- S-parameter Smith chart
- HFET S-Parameters to 40Ghz
- Experimental and simulated gate current of a 0.7 micron HEMT
- Experimental and simulated drain current of a 0.7 micron HEMT
- Case study examples
- MESFET created in Flash
- Accurate doping profiles produced by Flash
- Energy balance produces a more accurate calculation
- Traps are important for accurate transient simulation
- Threshold voltage
- Smith chart
- Polar plot
- Case study examples
- PHEMT structure created with internal syntax
- Energy balance shows correct drain current downturn
- Energy balance gives accurate transconductance
Conclusion to III-V device study
- 10 essential components of III-V device simulation
- Blaze is a fully integrated part of the Silvaco tool set
Download full presentation (4.3Mb pdf
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