Blaze workshop

Contents:

Requirements for III-V device simulation:
  • Blaze as part of a complete simulation toolset
  • The 10 essential components of III-V device simulation
  • Material parameters and models
Blaze applications
  • Introduction
  • Blaze features
Simulation of III-V device with Blaze
  • Overview
  • Information flow
  • Applications
  • Heterostructure specification
  • Device specification using DevEdit
  • DevEdit meshing features
  • III-V material specification
  • Saving designed structures
  • Material specification
  • ATLAS/Blaze references
  • Material and model specification
  • Schottky contact specification
  • Material specification
  • Model specification
  • Advanced models
  • Solution techniques
Case study - HBT
  • Case Study - HBT
  • HBT created in DevEdit
  • HBT cutline from emitter to collector
  • HBT gummel plot
  • HBT cut-off frequency
  • HBT 4 quadrant smith chart
Case study - PHEMT
  • Case study - PHEMT
  • Structure and doping profile
  • Band structure through gate
  • Energy balance shows accurate gate current
  • HFET subthreshold characteristic
  • HFET transconductance
  • S-parameter Smith chart
  • HFET S-Parameters to 40Ghz
  • Experimental and simulated gate current of a 0.7 micron HEMT
  • Experimental and simulated drain current of a 0.7 micron HEMT
  • Case study examples
  • MESFET created in Flash
  • Accurate doping profiles produced by Flash
  • Energy balance produces a more accurate calculation
  • Traps are important for accurate transient simulation
  • Threshold voltage
  • Smith chart
  • Polar plot
  • Case study examples
  • PHEMT structure created with internal syntax
  • Energy balance shows correct drain current downturn
  • Energy balance gives accurate transconductance
Conclusion to III-V device study
  • 10 essential components of III-V device simulation
  • Blaze is a fully integrated part of the Silvaco tool set

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