Contents:

Requirements for III-V Device Simulation

• Blaze as part of a complete simulation toolset
• Blaze as part of the ATLAS framework
• The ten essential components of III-V device simulation

Simulation of III-V device with Blaze

• Blaze applications
• Material parameters and models
• Blaze simulation overview
• Structure creation
• Structure creation using DevEdit
• Material specification for typical devices
• Model specification
• Solution techniques
• Conclusions

Simulation of III-V Device with Blaze and SiC

• SiC as part of the ATLAS framework
• Overview of SiC
• Features of SiC
• Syntax
• Trench-gated MOS (UMOS) Device
• Id-Vd characteristics for UMOS device
• Double implanted MOS (DIMOS) device
• Id-Vd characteristics for DIMOS device
• Conclusions

Simulation of III-V device with Blaze and Laser

• Laser as part of the ATLAS framework
• Overview of Laser
• Features of Laser
• Laser solution methodology
• Output from Laser
• Near field light intensity in the fundamental transverse mode for an InP/InGaAsP laser diode
• Optical gain as a function of bias
• Optical output power as a function of anode current
• Gain spectra below and above lasing threshold
• Laser spectrum above threshold
• Near field pattern for a strip laser
• Threshold and sub-threshold characteristics for a strip laser
• Fundamental transverse mode near field light intensity
• Transverse response of laser output power to turn-on voltage pulse
• Multiple quantum well laser diode
• Optical gain for MQW laser diode
• Conclusions