Silicon Devices
The full text for most of these papers may be found at the IEEE website at
www.ieee.org.
L. Korte, A. Laades, K. Lauer, R. Stangl, D. Schaffarzik, M. Schmidt,
"Surface photovoltage investigation of recombination at the a-Si/c-Si heterojunction",
Thin Solid Films, In Press, Corrected Proof, Available online 21 February 2009.
Haipeng Zhang, Mingyu Gao, Liyan Xu, Mi Lin, Xiaoyan Niu, Weifeng Lv,
"United Gauss—Pearson-IV distribution model of ions implanted into silicon",
Solid State Ionics, Vol. 179, Issues 21-26, 15 September 2008, pp. 832-836.
Abdelkader Aliane, F. De Moro, C. Pigot, P. Agnese, X. de la Broise, A. Gasse,
X.-F. Navick, M. Karolak, H. Ribot, J. -L. Sauvageot, V. Szeflinski, Y. Gobil,
D. Renaud, P. Rivallin, H. Geoffray,
"X-ray micro-calorimeter based on Si
thermistors for X-ray astronomy: Design and first measurements",
Journal of Low
Temperature Physics, Proceedings of the 12th International Workshop on Low
Temperature Dectectors (LTD12), Vol. 151, No. 1-2 PART 1, April, 2008, Pages
381-386.
Haipeng Zhang, Mingyu Gao, Liyan Xu, Mi Lin, Xiaoyan Niu, Weifeng Lv
"United
Gauss—Pearson-IV distribution model of ions implanted into silicon"
Solid
State Ionics, In Press, Corrected Proof, Available online 1 April 2008.
Iordan Karmakov, Anka Konova, Ivan Chakarov
"Spectroscopic Ellipsometry as a
Tool for Damage Profiling in Very Shallow Implanted Silicon", Plasma Processes
and Polymers, Vol. 3, Issue 2, Feb. 17, 2006, Pages 214-218.
B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand and L.
Clavelier
"Fabrication of SiGe-on-insulator substrates by a condensation
technique: An experimental and modelling study"
Semiconductor Science and
Technology 22 (3), art. No. 011, pp. 237-244, 30 January 2007
Alexei Svizhenko, Paul W. Leu, and Kyeongjae Cho,
"Effect of growth
orientation and surface roughness on electron transport in silicon
nanowires"
Physical Review B - Condensed Matter and Materials Physics 75 (12), art. No.
125417 14, March 2007
I. V. Kotova, T. J. Humanica, D. Nouaisb, J. Randela, A. Rashevskyc
"Electric fields in nonhomogeneously doped silicon. Summary of simulations"
10 July
2006 Nuclear Instruments and Methods in Physics Research, Section A:
Accelerators,
Spectrometers, Detectors and Associated Equipment 568 (1), pp. 41-45
Santosh Pandeya, Akwete Bortei-Dokub and Marvin H. White
"Simulation of
biological ion channels with technology computer-aided design"
16 November 2006 Computer Methods and Programs in Biomedicine 85 (1), pp. 1-7
Vaskar Sarkara and Aloke K. Dutta
"An accurate, analytical, and
technology-mapped definition of the surface potential at threshold and a new
postulate for the threshold voltage of MOSFETs"
Solid-State Electronics
Vol.
50, Issues 11-12, November-December 2006, pp. 1814-1821
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