Hua Ye, Changwoo Lee, James Raynolds, Pradeep Haldar, Michael J. Hennessy and Eduard K. Mueller, "Silicon power MOSFET at low temperatures: A two-dimensional computer simulation study" Cryogenics, Vol. 47, Issue 4, April 2007, pp. 243-251.

Nebojsa Jankovic, Tatjana Pesic and Petar Igic, "All injection level power PiN diode model including temperature dependence", Solid-State Electronics, Vol. 51, Issue 5, May 2007, pp. 719-725.

Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan, "Study of high breakdown-voltage AIGaN/GaN FP-HEMT", Acta Physica Sinica, Vol. 56, No. 5, May 2007, p 2895-2899.

M. Alwan, B. Beydoun, K. Ketata and M. Zoaeter, "Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET", Microelectronics Journal, Vol. 38, Issues 6-7, June-July 2007, pp. 727-734.

M. Alwan, B. Beydoun, K. Ketata and M. Zoaeter, "Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses", Microelectronics Reliability, Vol. 47, Issues 9-11, September-November 2007, pp. 1406-1410.

J. Vobecký and P. Hazdra "Dynamic avalanche in diodes with local lifetime control by means of palladium", Microelectronics Journal, In Press, Corrected Proof, Available online 21 December 2007.

Tintori O., Munteanu D., Loussier X., Autran J. L., Regnier A., Bouchakour R
"Compact modeling and performance analysis of Double-Gate MOSFET-based circuits" NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings 3, pp. 812-815

M. A. Belaid, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi and J. Marcon
"Reliability study of power RF LDMOS device under thermal stress"
10 October 2006 Microelectronics Journal 38 (2 SPEC. ISS.), pp. 164-170

M. Garesa, H. Maananea, M. Masmoudia, P. Bertramb, J. Marcona, M. A. Belaid, K. Mourguesa, C. Tolantb and P. Eudeline
"Hot carrier reliability of RF N- LDMOS for S Band radar application"
Microelectronics Reliability 46 (9-11), pp.1806-1811 September-November 2006

K. Shenai, E. McShane, S. K. Leong
"Lateral RF SOI power MOSFETs with fT of 6.9 GHz"
IEEE Electron Device Letters, Vol. 21, Issue 10, October 2000, pp. 500-502

S. Azzopardi, E. Woirgard, J. -M. Vinassa, O. Briat, C. Zardini
"IGBT Power modules thermal characterization: What is the optimum between a low current - High voltage or a high current - Low voltage test condition for the same electrical power?"
Microelectronics Reliability, Vol. 43, Issue 9-11, September 2003, pp. 1901-1906

B. You, A. Q. Huang, J. K. O. Sin
"A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics"
IEEE Transactions on Electron Devices, Vol. 48, Issue 9, September 2001, pp. 2143-2147

N. Czac, F. Morancho, P. Rossel, H. Tranduc, A. Peyre-Lavigne
"New generation of power MOSFET based on the concept of `Floating Islands´"
EPJ Applied Physics, Vol. 10, Issue 3, June 2000, pp. 203-209

K. S. Kelkar, N. E. Islam, C. M. Fessler, W. C. Nunnally
"Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering"
Journal of Applied Physics, Vol. 98, Issue 9, 1 November 2005, pp. 1-6

R. K. Burra, S. K. Mazumder, R. Huang
"DV/DT related spurious gate turn-on of bidirectional switches in a high-frequency cycloconverter"
IEEE Transactions on Power Electronics, Vol. 20, Issue 6, November 2005, pp. 1237-1243

M. J. Kumar, V. Parihar
"Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept"
Microelectronic Engineering, Vol. 81, Issue 1, July 2005, pp. 90-95

J. Ankarcrona, K. -H Eklund, L. Vestling, J. Olsson
"Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors"
Solid-State Electronics, Vol. 48, Issue 5, May 2004, pp. 789-797

P. Hazdra, J. Vobecky, H. Dorschner, and K. Brand
"Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons"
Microelectronics Journal, Vol. 35, Mar. 2004, pp. 249-257

M. Vellvehi, D. Flores, X. Jorda, S. Hidalgo, J. Rebollo, L. Coulbeck and P. Waind,
"Design considerations for 6.5 kV IGBT devices"
Microelectronics Journal, Vol. 35, Mar. 2004, pp. 269-275

C. Fink, J. Schulze, I. Eisele, W. Hansch, W. Werner, W. Kanert
"Reducing of ROn in vertical Power-MOSFETs due to local channel doping"
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Shuntao Hu and Kuang Sheng
"A New Edge Termination Technique for SiC Power Devices"
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1

James Fuerherm, Yu Anne Zeng, and Marvin H. White
"A Study of Interface Charges on the Operation of 4H Silicon Carbide Static (SiC) Static Induction Transistors (SITs)"
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1

Xiangli Li, Huadian Pan and B. M. Wilamowski,
"Gate-controlled punch through transistor Proceedings of the 15th Biennial University/Government/Industry"
Microelectronics Symposium 2003, 30 Jun-2 Jul 2003, pp. 226-229

K. Kunihiro, Y. Takahashi, Y. Ohno
"Physical modeling of off-state breakdown in power GaAs MESFETs"
Solid-State Electronics, Vol. 47, April 2003, pp. 621-631

J. Vobecky, P. Hazdra, V. Zahlava
"Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode"
Microelectronics Reliability, Vol. 43, April 2003, pp. 537-544

P. Bhatnagar, A. B. Horsfall, N. G. Wright, C. M. Johnson, K. V. Vassilevski, A. G. O´Neill
"Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation"
Solid-State Electronics, Vol. 49, Issue 3, March 2005, pp. 453-458

C. -L. Wang, M. -H. Lai, S. -R. Huang, C. -Y. Yeh
"Design of optimum the insulator Design of optimum the insulator gate bipolar transistor using response surface method with cluster analysis"
"Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volu

Il-Yong Park, et. al.
"Novel Process Technoques for Fabricating High Density Trench MOSFET with Self-Aligned N+/P+ Source Formed on the Trench Side Wall"
ISPSD´03 Proceedings, pp. 169-172

Chanho Park et. al.
"Deep Trench Terminations Using ICP RIE for Ideal Breakdown Voltages"
ISPSD´03 Proceedings, pp. 199-202

S. Alves et. al.
"Vertical N-channel FLIMOSFET for Future 12V/42V Dual Batteries Automotive Applications"
ISPSD´03 Proceedings, pp. 308-311

Timothy Henson and Joe Cao
"Low Voltage Superjunction MOSFET Simulation and Experiment"
Proc. International Symposium on Power Semiconductor Devices (ISPSD), 2003

R. S. Anand, B. Mazhari and J. Narain
"A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery"
Solid-State Electronics, Vol. 47, Issue 1, Jan. 2003, pp. 83-91

P. Cova, R. Menozzi and M. Portesine
"Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery"
Microelectronics Reliability, Vol. 43, Issue 1, Jan. 2003, pp. 81-87

M. Vellvehi, D. Flores, X. Jord
"Design and optimisation of suitable edge terminations for 6.5 kV IGBTs"
Microelectronics Journal, Vol. 33, Issue 9, September 2002, pp. 765-769

K. Shenai, M. Trivedi and P. Neudeck
"Characterization of Hard- and Soft-Switching Performance of High-Voltage Si and 4H-SiC PiN Diodes"
IEEE Trans. Elect Dev. Sept 2002, pp. 1648-1656

C. L. Wang
"Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method"
Jpn. J. Appl. Phys., Vol. 41, May 2002, pp. 2864-2872

C. Tolksdorf, C. Fink, J. Schulze, S. Sedlmaier, W. Hansch, W. Werner, W. Kanert and I. Eisele
"The vertical concept of power MOSFETs"
Materials Science and Engineering B, Vol. 89, February 2002, pp. 439-443

J. H. Kim et.al.
"High Performance Complementary Bipolar Process using PBSOI Technique"
ISPSD´02 Proceedings, pp. 85-88

Chanho Park et. al.
"A New Junction Termination Technique Using ICP RIE for Ideal Breakdown Voltages"
ISPSD´02 Proceedings, pp. 257-260

C. K. Jeon, et. al.
"Analysis of LDMOS Structure with Inclined P-bottom Region"
ISPSD´02 Proceedings, pp. 293-296

P. Hazdra, J. Vobecky and K. Brand,
"Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques"
Nucl. Instrum. Meth. B., Vol.186, Jan. 2002, pp. 414-418

Marc C. Tarplee et al
"Design Rules for Field Plate Edge Termination in SiC Schottky Diodes"
IEEE Trans. Elect. Dev., Vol. 48, No. 12, Dec. 2001, pp. 2659-2664

Q. Zhang and T. S. Sudarshan
"Lateral current spreading in SiC Schottky diodes using metal overlap edge termination"
Solid-State Electronics, Vol. 45, Issue 10, October 2001, pp. 1847-1850

D. Dragomirescu, G. Charitat
"Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates"
Microelectronics Journal, Vol. 32, May-June 2001, pp. 473-479

P. D. Hewitt and G. T. Reed
"Improved modulation performance of a silicon p-i-n device by trench isolation"
Journal of Lightwave Technology, Vol. 19, Issue 3, March 2001, pp. 387-390

C. J. Hung, P. Roblin, and S. Akhtar
"Distributed b-spline electrothermal models of thyristors proposed for circuit simulation of power electronics"
IEEE Transactions On Electron Devices, 48(2):353-366, February 2001

R. L. Thomas, M. Morgenstern, S. B. Bayne
"Silvaco modeling of a 10 kV SiC p-i-n diode"
Proceedings of the 26th International Power Modulator Symposium and 2004 High Voltage Workshop

B. Davenport and S. Michael
"Advanced thermophotovoltaic cells modeling, optimized for use in radioisotope thermoelectric generators (RTGs) for Mars and deep space missions"
A Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit

H.-C. Cheng, F. -L. Chang, M. -J. Lin, C. -C. Tsai, C. W. Liaw
"Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization"
Journal of the Electrochemical Society, Vol. 151, Issue 12, 2004

S. Musumeci, R. Pagano, A. Raciti, G. Belverde, A. Magrì, M. Melito, F. Zara
"New packaging concepts and physics-based simulation approach for low-voltage power MOSFETs lead to performance improvement in advanced DC-DC converters"
PESC Record - IEEE Annual Power Electronics Specialists Conference, Vol. 2, 2004, pp. 1531-1537

S. C. Kim, H. W. Kim, K. S. Seo, C. L. Zhang, E. D. Kim
"Static and dynamic characteristics of the 2.5kV/500A IGCTs"
Proceedings of the International Conference on Microelectronics, Vol. 24 I, 2004, pp. 171-173

D. Frey, J. L. Schanen, J.L. Aug, O. Lesaint
"Electric field investigation in IGBT power modules"
Proceedings of the 2004 IEEE International Conference on Solid Dielectrics ICSD 2004, Vol. 2, 200

S. Azzopardi, J. M. Vinassa, E. Woirgard, C. Zardini, J. L. Aucouturier
"What can be the optimum IGBT structure under UIS operation?"
PESC Record - IEEE Annual Power Electronics Specialists Conference, Vol. 4, 2004, pp. 2999-3003

K. Kelkar and W. C. Nunnally
"Semiconductor Modeling for Multi-layer, High Field, Photo-Switch using sub-bandgap Photons"
Digest of Technical Papers-IEEE International Pulsed Power Conference, 2003, pp. 819-822

X. Gu, Q. Shui, C. W. Myles, M. A. Gundersen
"Comparison of Si, GaAs, SiC and GaN FET-type switches for pulsed power applications"
Digest of Technical Papers-IEEE International Pulsed Power Conference, 2003, pp. 362-365.

K. Shenai, C. Cavallaro, S. Musumeci, R. Pagano, A. Raciti
"Modeling Low-Voltage Power MOSFETs as Synchronous Rectifiers in Buck Converter Applications"
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), Vol. 3, 2003

D. Frey, J. L. Schanen, J. L. Aug, J.L., Lesaint, O.
"Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements"
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), Vol. 2, 2003

H. Hakim, J. -L. Sanchez, J. -P. Laur, P. Austin, M. Breil
"The concave junction: An attractive topology to design specific junction terminations"
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2002, pp. 193-196

A. Raman, D. G. Walker, T. S. Fisher
"Non-equilibrium thermal effects in power transistors"
American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD, Vol. 369, Is

S. Abedlnpour and K. Shenai
"Stress analysis of DC-DC power converters"
"Proceedings of the Intersociety Energy Conversion Engineering Conference, Vol. 1, 2001, pp. 141

S. Abedinpour, R. Burra, K. Shenai
"Two-dimensional finite element simulation and stress analysis of a full bridge DC-DC power converter"
INTELEC, International Telecommunications Energy Conference (Proceedings), 2001, pp. 205-212

C. K. Jeon, J. J. Kim, Y. S. Choi, M. H. Kim, S. L. Kim, H. S. Kang, C. S. Song
"800V/1A, 1-chip process for battery charger IC"
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2001, pp. 355-358

K. Shenai and M. Trivedi
"Silicon carbide power electronics for high temperature applications"
IEEE Aerospace Conference Proceedings, Vol. 5, 2000, pp. 431-437

E. McShane and K. Shenai
"Microwave performance of power MOSFETs on SOI substrates"
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices

M. J. Urena, D. Leea, B. T. Hughesa et al
"Electrical characterization of AlGaN/GaN heterostructure wafers for high-power HFETs"
Journal of Crystal Growth, Vol. 230, 2001, pp. 579 - 583

P. Hazdra, J. Vobecky, H. Dorschner, K. Brand
"Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons"
Microelectronics Journal, Vol. 35, Mar. 2004, pp. 249 - 257

K. Shenai
"High-power robust semiconductor electronics technologies in the new millennium"
Microelectronics Journal, Vol. 32, Issues 5-6, 2001, pp. 397-408

G. Kamoulakos, Th. Haniotakis, Y. Tsiatouhas, J. -P. Schoellkopf and A. Arapoyanni
"Device simulation of a n-DMOS cell with trench isolation"
Microelectronics Journal, Vol. 32, Issue 1, January 2001, pp. 75-80

C. Anghel, N. Hefyene, A. Ionescu, M. Vermandel, B. Bakeroot, J.Doutreloigne, R. Gillon, S. Frere, C. Maier, Y. Mourier,
"Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage"
ESSDERC 2001

Kim S. L. Jeon C. K. Kim J. J. Choi Y. S. Kim M. H. Kang H. S. Song C. S.
"A New Compact Isolation Structure in High Side Island Region of 600V HVIC"
Proc. ESSDERC 2001

Anghel C. Hefyene N. Ionescu A.M. Vermandel M. Bakeroot B. Doutreloigne J. Gillon R. Frere S. Maier C. Mourier Y.
"Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage"
Proc. ESSDERC 2001

Frere S.F. Rhayem J. Adawe H.O. Gillon R. Tack M. Walton A.J.,
"LDMOS Capacitance Analysis versus Gate and Drain Biases, Based on Comparison Between TCAD Simulations and Measurements,"
Proc. ESSDERC 2001

Tsai-Sheng Liao, P. Yu, and O. Zucker
"Analysis of high pulse power generation using novel excitation of IGBT"
Proceedings of the IEEE 6th International Conference on Solid-State and Integrated-Circuit Technolog

Q. Zhang and T. S. Sudarshan
"Lateral current spreading in SiC schottky diodes using metal overlap edge termination"
Solid-State Electronics, Vol. 45, 2001, pp. 1847-1850

S. Azzopardi, M. Trivedi, C. Zardini and K. Shenai
"Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT"
Solid-State Electronics, Vol. 44, Issue 11, 1 November 2000, pp. 1899-1908

I. M. Gordion, Z. S. Gribnikov, V. A. Korobov and V. V. Mitin
"Fast gate turn-off in a merged thyristor-like structure"
Solid-State Electronics, Vol. 44, Issue 10, 1 October 2000, pp. 1723-1732

K. Sheng, F. Udrea and G. A. J. Amaratunga
"Optimum carrier distribution of the IGBT"
Solid-State Electronics, Vol. 44, Issue 9, 1 September 2000, pp. 1573-1583

J. Vobecky, P. Hazdra, O. Humbel and N. Galster
"Crossing point current of electron and proton irradiated power P-i-N diodes"
Microelectronics Reliability, Vol. 40, Issue 3, 17 March 2000, pp. 427-433

M. Hossin, C. M. Johnson, N. G. Wright and A. G. O´Neill
"Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation"
Solid-State Electronics, Vol. 44, Issue 1, January 2000, pp. 85-94

P. D. Hewitt and G. T. Reed
"Improving the response of optical phase modulators in SOI by computer simulation"
Journal of Lightwave Technology, Vol. 18, Issue 3, March 2000, pp. 443-450

F. Z. Mezroua and R. Abid
"Two-dimensional simulation of the transient electrothermal effects during the gate turn-off thyristor turn-off"
Journal of Vac. Sci. Technol. A, Vol. 18, No. 2, 2000, pp. 787 - 792

Changli Zhang, J. Waldmeyer, P. Roggwiller, Zhiming Chen, and Yapeng Lu
"Soft recovery characteristics of punch-through power diodes by proton irradiation"
Proceedings of the 3rd IEEE International Symposium on Power Electronics and Motion Control, Vol. 1

P. B. Shah, K. A. Jones, A. K. Agarwal, and S. Seshadri
"In-depth analysis of SiC GTO thyristor performance using numerical simulations"
Solid-State Electronics, Vol. 44, 2000, pp. 353-358

Vickram R. Vathulya and Marvin H. White
"Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC"
Solid-State Electronics, Vol. 44, 2000, pp. 309-315

A. Vandooren, S. Cristoloveanu, and J. P. Colinge
"The dynamic conductance and transconductance in double-gate (gate-all-round) SOI devices"
Proceeding of IEEE International SOI Conference, 2000, pp. 116-117

Vermandel L. Doutreloigne J. Moens P Tack M.
"Using the Self Aligned Field Implant To Design High Voltage Devices in Sub-um CMOS Technologies"
Proc. ESSDERC 2000, pp. 228-231

N. Cezac et al
"A new generation of power unipolar devices: the concept of the floating islands MOS transistor (FLIMOST)"
ISPSD´2000, Toulouse, pp. 69-72

C. Finkl et al
"Vertical Power-MOSFETs with Local Channel Doping"
Proc. IEDM 2000

P. B. Shah, K. A. Jones, A. K. Agarwal, and S. Seshadri
"In-depth analysis of SiC GTO thyristor performance using numerical simulations"
Solid-State Electronics, Vol. 44, 2000, pp. 353-358

N. Ota, et al.
"Thick and large area PIN diodes for hard X-ray astronomy"
Nuclear Instruments and Methods in Physics Research A, Vol. 436, October 1999, pp. 291-296

Budong You, Alex Q. Huang and Johnny K. O. Sin
"Analysis of high-voltage trench bipolar junction diode (TBJD)"
Solid-State Electronics, Vol. 43, Issue 9, September 1999, pp. 1777-1783

V. R. Vathulya, H. L. Shang and M. H. White
"A novel 6H-SiC power DMOSFET with implanted P-well spacer"
IEEE Electron Device Letter, Vol. 20, Jul. 1999, pp. 354-356

J. Vobecky, P. Hazdra, V. Zahlava
"Open circuit voltage decay lifetime of ion irradiated devices"
Microelectronics Journal, Vol. 30, June 1999, pp. 513-520

Z. S. Gribnikov, A. B. Brailovsky and V. V. Mitin
"Stacked PIN diode structures for microwave switching"
Solid-State Electronics, Vol. 43, Issue 5, May 1999, pp. 997-1000

P. R. Palmer and B. H. Stark
"Formalised method for effecting multiple modes in single MOS gated power devices"
IEE Proceedings on Circuits, Devices and Systems, Vol. 146, Issue 4, 1999, pp. 203-209

H. T. Lim, F. Udrea, D. M. Garner, and W. I. Milne
"Modelling of self-heating effect in thin SOI and partial SOI LDMOS power devices"
Solid-State Electronics, Vol. 43, 1999, pp. 1267-1280

Yang-Kyu Choi, K. Asano, N. Lindert, V. Subramanian, Tsu-Jae King, J. Bokor, and Chenming Hu
"Ultra-thin body SOI MOSFET for deep-sub-tenth micron era"
IEEE International Electron Devices Meeting, IEDM Technical Digest, 1999, pp. 919-921.

H. T. Lim, F. Udrea, D. M. Garner, and W. I. Milne
"Modelling of self-heating effect in thin SOI and partial SOI LDMOS power devices"
Solid-State Electronics, Vol. 43, 1999, pp. 1267-1280.SiC

P. Hower et al
"Safe Operating Area Considerations in Ldmos Transistors"
Proc. ISPSD´99, pp. 55-58

Malay Trivedi and Krishna Shenai
"Physical Analysis Of Current Snap-Back Phenomenon In Buffered High Power Rectifiers"
Proc. IEEE BCTM 1999

K. Palser et al
"3D numerical simulation for assisting external latch-up protection test structure design"
ESSDERC 1999, pp. 508-511

Budong You et al
"A New Trench Bipolar Junction Diode (TBJD)"
Proc. ISPSD 1999, pp. 133-136

J. L.Sanchez et al
" A new high-voltage integrated switch : the <<Thyristor Bual>> function"
ISPSD 1999, pp. 157-160

Malay Trivedi and Krishna Shenai
"Comparison of RF Performance of Vertical and Lateral DMOSFET"
ISPSD 1999, pp. 245-248

V. Raineri, M. Saggio, F. Frisina and E. Rimini
"Voids in silicon power devices"
Solid-State Electronics, Vol. 42, December 1998, pp. 2295-2301

Pankaj B. Shah and Kenneth A. Jones
"Two dimensional numerical investigation of the impact of material parameter uncertainty on the steady-state performance of passivated 4H-SiC thyristors"
Journal of Applied Physics, Vol. 84, No. 8, October 1998, pp. 4625-4630.SOI

Eric Vandenbossche, Catherine De Keukeleire, Marc de Wolf, Hugo Van Hove and Johan Witters
"Modelling and simulation of hot-carriers degradation of high voltage floating lateral NDMOS transistors"
Microelectronics and Reliability, Vol. 38, Issues 6-8, 8 June 1998, pp. 1097-1101

Miribel-Catala, P. L.; Puig-Vidal, M.; Bota, S.; Montane, E.
"Metodologias de diseno fisico aplicadas al diseno de circuitos integrados de potencia (Physical design methodologies applied to the design of integrated power circuits)"
Informacion Tecnologica, v 9, n 2, 1998, pp. 319-322 (In Spanish)

J. Wang and B. W. Williams
"A simulation study of high voltage 4H-SiC IGBTs"
Semicond. Sci. Technol., Vol. 13, 1998, pp. 806-815

P. R. Walsh, A. F. J.Murray and W. A. Lane
"A Family of Novel Surge Protection Devices With Improved Parameter Control"
Proceedings of 1998 ISPSD, Kyoto

M. Nemoto, Y. Takahashi, T. Fujii, N. Iwamuro and Y. Seki
"Study on Voltage Oscillation Phenomenon in High power P-i-N Diode"
Proceedings of 1998 ISPSD, Kyoto

M. T. Rahimo, D. E.Crees, N. Y. Shammas
"A Novel Concept for Fast Recovery Diodes having Junction Charge Extraction(JCE) Regions"
Proceedings of 1998 ISPSD, Kyoto

M. Kataoka, K. Komuro, K. Fujita, M. Hayama, A. Taniguchi
"Analysis of Al-shorted WSix/Si Gate Performance in High-Frequency Band Si Power MOSFETs with Process/Device/Circuit Continous Simulation"
Proceedings of 1998 ISPSD, Kyoto

J. Wang and B. W. Williams
"A simulation study of high voltage 4H-SiC IGBTs"
Semicond. Sci. Technol., Vol. 13, 1998, pp. 806-815

M. Vermandel, C. De Backere and A. Van Calster
"A high voltage nDMOS structure in a standard sub-micron CMOS process"
Proc. ESSDERC 1997, pp. 508-511

C. M. Johnson, M. Hossin and A. G. O´Neill
"GaAs schottky gate bipolar transistor for high voltage power switching applications"
Proc. ESSDERC´97, pp. 548-551

S. Azzopardi, J-M. Vinassa and C. Zardini
"Investigations on the internal physical behaviour of 600V punch-through IGBT under latch-up at high temperature"
Proc. ESSDERC 1997, pp. 616-619

C. Mingues and G .Charitat
"Efficiency of junction termination techniques vs oxide trapped charges"
Proc. IEEE ISPSD 1997, pp.137-140

S. Xu et al
"BiLBRT: Bidirectional lateral base resistance controlled thyristor"
Proc. IEEE ISPSD 1997, pp. 281-284

M. Allenspach, C. Dachs, G. H. Johnson and et al.,
"SEGR and SEB in N-channel power MOSFETs"
IEEE Trans. Nuclear Science, Vol. 43, Dec. 1996, pp. 2927-2931

J. L. Titus, C. F. Wheatley, M. Allenspach and et al.,
"Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs"
IEEE Trans. Nuclear Science, Vol. 43, Dec. 1996, pp. 2938-2943

M. Trivedi and K. Shenai
"Internal dynamics of IGBT during short circuit switching"
Proc. IEEE BCTM 1996, pp. 77-80

D. Moncoqut et al
"LDMOS Transistor for SMART POWER circuits: Modelling and design"
Proc. IEEE BCTM 1996, pp. 216-219

A. Nezar et al
"Hot-electron induced snapback in 50-V LDMOS transistors fabricated in 0.8 um CMOS technology"
Proc. IEEE BCTM´96, pp. 224-226

Francis K. Chai, S. L. Kosier, R. D. Schrimpf and K. F. Galloway
"A method for predicting breakdown voltage of power devices with cylindrical diffused junctions"
Solid-State Electronics, Vol. 38, Issue 8, August 1995, pp. 1547-1549

Widjaja, Kurnia, Shenai, Divan
"Switching Dyamics of IGBT´s in Soft-Switching Converters"
IEEE Trans. on ED, Vol 42 No.3, March 1995

Fischer, Shenal
"Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Scaled Vertical Power DMOSFET´s"
IEEE Trans. on ED, Vol 42 No.3, March 1995

S. L. Kosier et al
"Comparison of termination methods for low-voltage, vertical integrated power devices"
Solid States Electronics, Vol. 37, No 9, pp1611-1617 1994

Widjaja, Kurnia, Divan, Shenal
"Computer Simulation and Design Optimization of IGBT´s in Soft-Switching Converters (note: references Silvaco´s MIXEDMODE)"
ISPSD, 1994

A. F. J. Murray and W. A. Lane
"800V wiring for HVIC applications using polysilicon field plates"
Proc. ESSDERC´94, pp.213-216.

Freydin, Velmere, Udal
"Failure Prediction of Power Devices Under Reverse Surge Current Conditions"
ISPSD, 1992

Rabkin, Shabanov
"Modeling the Switching-Off Process in Latching p-n-p-n Structures Using A Quasi-Two-Dimensional Approximation"
Radiotekhnika, 1989

Rabkin, Korsmik
"Investigation of the Influence of the Parameters of the p-Bases on the Static Characteristics of a Latching Thyristor"
Radiotekhnika, 1989

Rabkin
"Mathematical Model & Investigation of the Turn-off Process of p-n-p-n Structures in Combination Regime"
Radiotekhnika, 1989

"M. Trivedi, S. Pendharkar, K. Shenai"
"Switching characteristics of MCT´s and IGBT´s in power converters"
IEEE Transactions on Electron Devices, Vol. 43, Issue 11, November 1996, pp. 1994-2003

M. Trivedi and K. Shenai
"Practical limits of high-voltage thyristors on wide band-gap materials"
Journal of Applied Physics, Vol. 88, Issue 12, 15 December 2000, pp. 7313-7320

B. H. Stark and P. P. Palmer
"Switching aspects of hybrid semiconductor power devices"
IEE Colloquium (Digest), Issue 30, 1999

N. S. Saks, S. S. Mani, A. K. Agarwal, M. G. Ancona
"475-V high-voltage 6H-SiC lateral MOSFET"
IEEE Electron Device Letters, Vol. 20, Issue 8, August 1999, pp. 431-433

B. H. Stark and P. R. Palmer
"Single-gated multiple-mode power semiconductor devices"
IEE Colloquium (Digest), Issue 104, 29 June 1999, pp. 21-24

B. You, A. Q. Huang, B. Zhang, Y. Li
"The Bipolar Junction Diode (BJD) - A new power diode concept"
International Power Electronics Congress - CIEP, Vol. 1998, 1998, pp. 164-169