Memory Devices

The full text most of these papers may be found at the IEEE website at www.ieee.org.

J. Yu, K. Aflatooni, "Leakage current in DRAM memory cell", 2006 16th Biennial University / Goverment / Industry Microelectronics Symposium, 2007, pp. 191-194.

Kuk-Hwan KIM, Hyunjin LEE, and Yang-Kyu CHOI,
"Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate"
IEICE Transaction on Electronics, Vol. E89-C, NO.5 MAY 2006