Compound Devices

The full text for most of these papers may be found at the IEEE website at www.ieee.org.

M.C. Tu, Y.C. Wang, H.Y. Ueng,
"Linearity optimizing on HBT power amplifier design",
Microelectronics Journal, In Press, Corrected Proof, Available online 20 September 2009

S. Mil'shtein, A. Churi, C. Gil,
"Is HEMT operating in 2D mode?",
Microelectronics Journal, Vol. 40, Issue 3, March 2009, pp. 554-557.

Ritesh Gupta, Servin Rathi, Ravneet Kaur, Mridula Gupta, R.S. Gupta,
"T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers",
Superlattices and Microstructures, Vol. 45, Issue 3, March 2009, pp. 105-116.

Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R.S. Gupta,
"Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency",
Microelectronics Journal, Vol. 39, Issue 12, December 2008, pp. 1416-1424.

N. Gaurav, S. Bhatnagar, R. Raj, S.De, S. Niranjana, B. S. Satyanarayana,
"Nanocluster carbon thin film as a semiconducting layer and feasibility for device application",
Computing, Communication and Networking, 2008. ICCCn 2008. International Conference on 18-20 Dec. 2008 pp. 1 - 5

M. Mohiuddin, S. Arshad, A. Bouloukou, M. Missous,
"2-D Physical Modelling of Î´-doped GaAs/AlGaAs HEMT",
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on 12-16 Oct. 2008 pp. 207 - 210.

Tarun Vir Singh, M. Jagadesh Kumar,
"Effect of the Ge mole fraction on the formation of a conduction path in cylindrical strained-silicon-on-SiGe MOSFETs",
Superlattices and Microstructures, Vol. 44, Issue 1, Jul. 2008, pp. 79-85.

Fortunato Pezzimenti, Francesco G. Della Corte, Roberta Nipoti,
"Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour"
Microelectronics Journal, In Press, Corrected Proof, Available online 21 March 2008.

M. Tayel, A. Alexandria Elgendy,
"An Analytical DC model with self-heating effect for microwave AlGaN/GaN high electron mobility transistores",
Engineering Journal. Vol. 45, No. 6, pp.. 675-680, Nov. 2007.

In-Ho Kang, Wook Bahng, Sang-Cheol Kim, Sung-Jae Joo, Nam-Kyun Kim,
"Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped
Channel MESFET having Various Delta-Doping Concentrations",
Materials Science Forum. Vol. 556-557, pp. 823-826. 2007

T. Munir, A. A. Aziz, M. J. Abdullah,
"Epilayer Thickness and Doping Density Variation Effects on Current-Voltage (I-V) Characteristics of n-GaN Schottky Diode",
IEEE International Conference on Semiconductor Electronics, 2006. ICSE
'06. Oct. 29 2006 - Dec. 1 2006, pp. 892 - 895.

M. Philip, A. O'Neill,
"Calibration of 4H-SiC TCAD Models and Material Parameters"
2006 Conference on Optoelectronic and Microelectronic Materials and
Devices, 6-8 Dec. 2006, pp. 137 - 140.

T. Munir, A. Abdullah, M. J. Abdulaziz, N. M. Ahmed,
"Concentration efects on n-GaN schottky diode current-voltage (i-v) characteristics",
Materials Science Forum. Vol. 517, pp. 159-164. 2006.

L. O. San Vicente, J. M. Lopez-Gonzalez, A. Garcia-Loureiro,
"Numerical simulation of new InP/GaAsSb-DHBTs using ATLAS",
Spanish Conference on Electron Devices, 2005 2-4 Feb. 2005, pp. 187 - 189.

Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng and Chien-Ming Li,
"Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure",
Microelectronics Journal, Vol. 38, Issues 6-7, June-July 2007, pp. 750-753.

P. Mistry, I. Gomez-Morilla, R.C. Smith, D. Thomson, G.W. Grime, R.P. Webb, R. Gwilliam, C. Jeynes, A. Cansell, M. Merchant and K.J. Kirkby,
"Maskless proton beam writing in gallium arsenide",
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 260, Issue 1, July 2007, pp. 437-441.

In-Ho Kang, Wook Bahng, Sang-Cheol Kim, Sung-Jae Joo, Nam-Kyun Kim,
"Numerical investigation of the DC and RF performances for a 4H-SiC double delta-doped channel MESFET having various delta-doping concentrations",
Materials Science Forum, Vol. 556-557, 2007, pp. 823-826.

B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand and L. Clavelier
"Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study"
Semiconductor Science and Technology 22 (3), art. No. 011, pp. 237-244, 30 January 2007

M. De Laurentis, F. M. De Paola, V. d'Alessandro, A. Irace, and G. Breglio
"InP/InGaAsP electrically controlled Bragg modulator for over 40-Gbit/s modulation speed"
Jul. 6, 2006 Proceedings of SPIE - The International Society for Optical Engineering 6350, art. No. 63500E

S. S. Mane, S. Hameeda, A. R. Sahaa and C. K. Maiti
"Modeling of low temperature SiGe oxidation"
Materials Science in Semiconductor Processing Vol. 9, Issues 4-5, August-October 2006, pp. 668-672

A. R. Saha, C. K. Maiti
"Technology CAD for germanium CMOS circuit"
18 September 2006 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 135 (3), pp. 261-266

Shadi A. Dayeh, David P. R. Aplin, Xiaotian Zhou, Paul K. L. Yu, Prof., Edward T. Yu, Prof., Deli Wang, Prof.
"High Electron Mobility InAs Nanowire Field-Effect Transistors"
Small Vol. 3, Issue 2, pp. 326 - 332 Published 5 Dec 2006

I. Chakarov and M. Temkin
"Modeling of Ion Implanatation in SiC Crystals",
Nucllear Intstruments Methods Physics Research B, Beam Interactactions Materials Atoms, Vol. 242, No.1/2, Jan. 2006, pp. 690-692.