Compound Devices

The full text most of these papers may be found at the IEEE website at www.ieee.org.

Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng and Chien-Ming Li, "Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure", Microelectronics Journal, Vol. 38, Issues 6-7, June-July 2007, pp. 750-753.

P. Mistry, I. Gomez-Morilla, R.C. Smith, D. Thomson, G.W. Grime, R.P. Webb, R. Gwilliam, C. Jeynes, A. Cansell, M. Merchant and K.J. Kirkby, "Maskless proton beam writing in gallium arsenide", Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 260, Issue 1, July 2007, pp. 437-441.

In-Ho Kang, Wook Bahng, Sang-Cheol Kim, Sung-Jae Joo, Nam-Kyun Kim, "Numerical investigation of the DC and RF performances for a 4H-SiC double delta-doped channel MESFET having various delta-doping concentrations", Materials Science Forum, Vol. 556-557, 2007, pp. 823-826.

B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand and L. Clavelier "Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study"
Semiconductor Science and Technology 22 (3), art. no. 011, pp. 237-244, 30 January 2007

M. De Laurentis, F. M. De Paola, V. d'Alessandro, A. Irace, and G. Breglio
"InP/InGaAsP electrically controlled Bragg modulator for over 40-Gbit/s modulation speed"
Jul. 6, 2006 Proceedings of SPIE - The International Society for Optical Engineering 6350, art. no. 63500E

S. S. Mane, S. Hameeda, A. R. Sahaa and C. K. Maiti
"Modeling of low temperature SiGe oxidation"
Materials Science in Semiconductor Processing Volume 9, Issues 4-5, August-October 2006, pp. 668-672

A. R. Saha, C. K. Maiti
"Technology CAD for germanium CMOS circuit"
18 September 2006 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 135 (3), pp. 261-266

Shadi A. Dayeh, David P. R. Aplin, Xiaotian Zhou, Paul K. L. Yu, Prof., Edward T. Yu, Prof., Deli Wang, Prof.
"High Electron Mobility InAs Nanowire Field-Effect Transistors"
Small Volume 3, Issue 2, pp. 326 - 332 Published 5 Dec 2006

Ivan Chakarov and Misha Temkin
"Modelling of ion implantation in SiC crystals"
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 242 (1-2), pp. 690-692