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VICTORY Device:

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VICTORY Device

3D DEVICE SIMULATOR

VICTORY Device is a general purpose 3D device simulator. A tetrahedral meshing engine is used for fast and accurate simulation of complex 3D geometries. VICTORY Device performs DC, AC and transient analysis for silicon-based semiconductor devices, binary, ternary, quaternary and organic material-based devices.

Key Features

• Tetrahedral mesh for accurate 3D geometry representation
• Advanced physical models with user-customizable material database for silicon, compound, and organic materials
• Stress-dependent mobility and bandgap models
• Highly customizable physical models using the C-Interpreter or dynamically linked libraries
• DC, AC and transient analysis
• Drift-diffusion and energy balance transport equations
• Self-consistent simulation of self-heating effects including heat generation, heat flow, lattice heating, heat sinks and temperature dependent material parameters
• Advanced multi-threaded numerical solver library
• ATLAS-compatible
• Silvaco's strong encryption is available to protect valuable customer and third party intellectual property.

Advanced Device Simulation

• Latchup, avalanche, and thermal breakdown analysis
• Switching times, propagation delays, and single event upset transient analysis
• Self heating, heat sinks, and temperature dependent simulation

3D MOSFET with LOCOS isolation.	Tetrahedral mesh for LOCOS isolation MOSFET.

Diagonal MOSFET structure with the oxide layer removed to show the polysilicon and metalization layers.	Net doping and tetrahedral mesh for diagonal MOSFET. The metalization layers have been removed to show the well doping regions.

IdVd 3D SOI NMOSFET simulation with body contact showing the kink suppression effect

SRAM Simulation

• Thermal analysis
  
• Simulation of cross talk and coupling between transistors
  
• Switching times
  
• Breakdown
  

3D Cylindrical Mesh Refinement

• Cylindrical mesh refinement along an SEU track to accurately resolve charge generation
  

SOI device showing cylindrical meshing for the SEU strike.	The SEU strike volume was refined with a circular mesh in order to accurately capture charge generation along the length of the track. This has all been achieved without dramatically increasing the number of mesh points.

Acceptor concentration in the SRAM cell. The NMOS and PMOS devices have been combined into one structure.	Electrostatic potential isocontour for the SRAM cell.

SRAM input and output voltages versus transient time during a SEU strike.

IV curves from VICTORY Device account for the SEU strike charge generation. The current profile from VICTORY Device can be fitted to a SmartSpice current source which then allows the SEU upset in a 6T SRAM cell to be predicted.

Rev. 110210_07