Semiconductor Laser Diode Simulator

Laser is the world’s first commercially available simulator for semiconductor laser diodes. Laser works in conjunction with Blaze in the Atlas framework to provide numerical solutions for the electrical behavior (DC and transient responses) and optical behavior of edge emitting Fabry-Perot type lasers diodes.

Key Features

  • Laser works within the framework of Atlas and Blaze. Atlas provides the framework integration. Blaze provide electrical simulation
  • Self-consistently solves the Helmholtz equation to calculate optical field and photon densities from which field patterns may be derived
  • Accounts for carrier recombination due to spontaneous recombination and stimulated emission using electronic band structure models based on the k•p method
  • Calculates optical gain as functions of photon energy and quasi-Fermi levels or carrier concentrations
  • Calculates gain and spontaneous recombination in quantum wells including strain effects
  • Predicts laser light output power and light intensity profiles corresponding to the fundamental and higher order transverse modes
  • Calculates the light output and modal gain spectra for multiple longitudinal modes
  • Laser threshold current and gain as a function of bias

InP/InGaAsP Laser Diode

Cross section of a typical InP/InGaAsP laser diode. This represents the domain over which electrical solutions for the laser diode are obtained using Atlas/Blaze. Optical solutions are obtained by Laser in a smaller domain around the active layer. This figure shows the near field light intensity in the fundamental transverse mode.
Simulated laser output power as a function of anode current for the InP/InGaAsP laser diode. Important characteristics such as laser threshold current are readily extracted.
Laser gain as a function of bias. The gain rises until the laser threshold. After the threshold the gain remains constant and equal to the laser losses. Laser was applied to the InP/InGaAsP laser diode. To obtain this above threshold laser spectrum, multiple longitudinal modes were simulated with energies between 1.065 and 1.09 eV.
Comparison of the simulated gain spectra below and above lasing threshold for the InP/InGaAsP laser diode.
Laser can also calculate the far-field patterns of laser diodes. The figure above shows the far-field pattern of the InP/InGaAsP laser diode.
Laser was applied to a GaAs/AlGaAs laser diode shown above. This device has two n-AlGaAs cladding layers to confine the light profile. The primary transverse mode light profile is shown.

 

GaAs Laser Diode

Light intensity from strip laser showing double spot. The near field pattern is distorted due to spatial hole burning in the active layer Laser response to a voltage sweep showing the threshold and subthreshold characteristics of the strip laser
Laser incorporates the photon equation in its set of self-consistent equations. This allows transient simulations to be preformed that accurately reproduce more complex behavior. This figure shows the result of a small voltage perturbation to the anode voltage. The transient simulation shows the resulting oscillations which are commonly referred to as relaxation oscillations.
 
 
Laser can simulate multiple transverse optical modes. These figures show the first four lasing modes for the GaAs/AlGaAs stripe laser.

 

Multiple Quantum Well Lasers

Cross section of a stripe geometry multiple quantum well laser. In this case there are 2 wells. Optical intensity distribution of the principal optical mode at the operating bias.
Overlay of the current vectors with contours of the radiative recombination rate in the wells Laser models incorporate effects such as Lorentzian line broadening in the gain curve as shown in the above figure

Rev. 110113_04