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Brochure
TFT3D
3D Amorphous and Polycrystaline Device Simulator
TFT3D is an advanced device technology simulator equipped with the physical models and specialized numerical techniques required to simulate amorphous or polysilicon devices in 3D. TFT3D models the electrical effects of the distribution of defect states in the band gap of non-crystalline materials. Users can specify the Density Of States (DOS) as a function of energy for amorphous silicon and polysilicon for grain and grain boundaries as well as the capture cross-sections/lifetimes for electrons and holes. Models for mobility, impact ionization and band-to-band tunneling can be modified to accurately predict device performance.
Features
- Energy dependent DOS
- Trap-to-Band phonon-assisted tunneling
- Band-to-Band tunneling effects
- Poole-Frenkel barrier lowering
- DIGBL (Drain Induced Grain barrier Lowering)
- DC, AC and transient simulation
- Separate grain and grain boundary DOS specification
Poly-Si TFT Grain Size Simulation
Crystallization by excimer laser annealing helps ELA Poly-Si TFT devices to
have very good grain quality. The effects on the channel of the gate position
and grain size can be simulated with TFT3D.
a-Si TFT
The metal electrode geometry is important for devices such a bottom gate a-Si TFTs. TFT3D correctly accounts for these geometrical effects on the current and capacitance.
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Id/Vd curves for the bottom gate of a a-Si TFT device
as the gate bias is varied from 2 to 10V. |
Cgd/Vd and Cds/Vd curves for the bottom gate of a
a-Si TFT device as the gate bias is varied from 2 to 10V. |
Solar Cells
Simulation of solar cells in 3D can be used to investigate effects such as
electrical losses in the cell structure due to variation in the front metal
grid finger geometry.
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Potential distribution in a solar cell. |
The simulation of an octagonal array of TFT elements
using TFT3D. The contacts and the SiO2 layers have been made transparent
so that the amorphous Si elements can be seen more clearly. |
Rev. 020508_01