2D Monte Carlo Device Simulator

MC Device simulates the behavior of relaxed and strained silicon devices including non-equilibrium and ballistic effects in 2D. MC Device is part of the Atlas Device Simulation Framework and is fully integrated with Interactive Tools.

Key Features

  • Uses full electronic band structure
  • Includes MC transport model for electrons and holes
  • Models the scattering of carriers with acoustical and optical phonons, with other carriers, with impurities, and under impact ionization
  • Treats charge transport under spatially-dependent stress
  • Provides a quantum correction model based on Schroedinger’s equation
  • Imports device structures from Athena and Atlas
  • Includes a bulk simulation mode for modeling charge transport in relaxed and strained silicon in arbitrary directions and under varying fields and stress levels
  • Uses statistical enhancement methods to resolve the tail of the carrier distribution function and analyze hot-carrier effects
A 40-nm self-aligned n-MOSFET generated using Athena The average potential and the average vector
electric field for Vg=Vg=1 V to Vd=Vg=1 V
The average electron concentration and the average vector velocity direction.
The average electron energy.
Transient analysis yields three converging estimates for the steady-state drain current for Vg=Vd=1 V and Vs=Vsub=0 V based on three integrations of the current density from the center, left and right of this structure. The average distribution function of the source well (x=-0.4 um), channel (x=+0.0 um), drain edge (x=+0.02 um), and drain well (x=+0.04 um). The curves show the heating of electrons as they transverse the channel. The diversion of the distribution function from a drifted Maxwellian shows why MC modeling of this device is helpful.

Rev. 110113_04