Analytical Etch of a Trench with Angled Sidewalls and Undercuts

anmiex08.in : Analytical Etch of a Trench with Angled Sidewalls and Undercuts

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example demonstrates use of ANGLE and UNDERCUT parameters with default (DRY) analytical etch. ANGLE specifies the angle (in degrees) of resulting sidewalls. The ANGLE is measured from horizontal. ANGLE=90 (default) corresponds to vertical sidewalls, ANGLE < 90 results in trenches narrowing to the bottom, while ANGLE > 90 produces a retrograde sidewalls. UNDERCUT specifies the penetration (in microns) of the etch under the mask edges. The UNDERCUT length is measured along the boundary line between etched material and masking layer.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.