Selective and Non-selective Si Deposition

anmiex07.in : Selective and Non-selective Si Deposition

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

It is known that crystalline Si cannot be grown on non-crystalline (Poly-Si or other material) surfaces. Therefore, in those cases when the epitaxial or other type of silicon growth takes place in the structure with different surface material types, the crystalline Si grows only on Si while Poly-Si grows elsewhere. To facilitate simulation of such structures the capability to selectively transform Si into Poly during deposition or epitaxy has been implemented. The capability is invoked by the parameter SI_TO_POLY in the corresponding DEPOSIT or EPITAXY statement. This example demonstrates this capability for Si deposition on the structure consisting of 2 LOCOS isolation areas and an active Si area.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.