Phosphorus Segregation Modeling

anmiex03.in : Phosphorus Segregation Modeling

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example shows the use of improved discretization to improve spurious phosphorus segregation through gate oxides.

The problem is clearly seen in the left plot. The original gridding has no mesh points wholly within the oxide layer. It results in too much diffusion through the oxide. The only way to decrease the transport is to increase the number of grid points in the thin oxide.

To increase mesh in thermally grown oxides the parameter method grid.ox is used. The default Lowther discretization method means the diffusion into silicon is almost completely eliminated (right plot).

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.