Retrograde Well Formation Using High Energy Implants

aniiex06.in : Retrograde Well Formation Using High Energy Implants

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example shows high energy implant capability. The look-up tables for main implants are extended up to 8 MeV which allows simulation of modern technologies involving MEV implants. In this example, the three microns deep retrograde well is formed using two P implants (2 MeV and 0.75 MeV) with subsequent 1 hour, 1100 C anneal.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.