Screen Oxide Thickness Dependence using the SVDP Model

aniiex03.in : Screen Oxide Thickness Dependence using the SVDP Model

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example shows how a 35 keV boron implant profile depends on the thickness of the surface oxide. Oxide is grown in DRY ambient at a temperature of 900 C. Oxidation time varies from 0 to 160 minutes which results in oxide thicknesses between approximately 50 and 400 Angstroms. The values of oxide thickness are extracted and then substituted into the S.OXIDE parameter of the IMPLANT statement. The surface screen oxide partially randomizes the ion flux which leads to less channeling with increasing oxide thickness. The SIMS Verified Dual Pearson ( SVDP ) method allows us to properly predict this effect. Parameter PRINT.MOM specifies that moments used in each simulation should be printed out.

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