Angled Monte Carlo Implant into a Trench : Angled Monte Carlo Implant into a Trench

Requires: SSuprem 4, MC IMPLANT
Minimum Versions: Athena 5.21.2.R

This example employs a Monte Carlo implant model to implant boron into the sidewall of a trench. The RELAX statement is also used to adapt the mesh after trench etching so that a fine mesh can be created at the surface where it is needed to resolve the implantation.

For this example, ions are incident at an angle of 15 degrees from the direction of the y-axis. Thus, the ions are incident directly only on the right side of the trench and at the top exposed surface. The doping on the left side and bottom of the trench is due to reflected ions. There is a visible reduction in the depth of the profile about 1 micron from the bottom of the trench. This corresponds to the point in the trench where ions are directly incident above this point and shadowed below it. The first TonyPlot shows the ion trajectories (including those of reflected ions). To facilitated the visualization select the LINE (the last icon in the DISPLAY menu) button.

Following the implant calculation, a short diffusion is performed and the results are plotted using TonyPlot . The output shows 1D profiles from the surface of the unetched silicon and also from the implanted sidewall of the trench.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.