Trench Etching Using the RIE Model

anelex04.in : Trench Etching Using the RIE Model

Requires: Elite
Minimum Versions: Athena 5.21.2.R

This example demonstrates simple trench etching using a combination of isotropic and directional etch components. The initial structure was created in three steps. The INITIALIZE statement defines silicon as the substrate material and specifies the structure dimensions. The second step is a simple vertical deposition. The third step models lithography in a very simple manner. An opening with critical dimensions of 0.8 um and sidewall a slope of 89 degrees is created with the ETCH statement.

The RIE was performed in two steps. The first step has a high isotropic component. This produces a rounded profile with undercutting. The second portion has a high directional component. This produces a quick and dirty simulation of a strawberry shaped profile that is observed experimentally.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.