Interconnect Metalization

anelex13.in : Interconnect Metalization

Requires: Elite
Minimum Versions: Athena 5.21.2.R

This example performs a sequence of deposition and etch steps corresponding to a double metal power IC process. The step coverage and topography of the second metal level is critical in determining the success of the process.

This example compares the structures created by two final metalization techniques. The first technique includes surface diffusion that would result from a high temperature during deposition or from increased temperature or RF bias. The second technique does not use surface diffusion. The improved step coverage due to surface diffusion is evident from the plots produced.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.