Lift-off Profile Polymer Etching

anelex12.in : Lift-off Profile Polymer Etching

Requires: Elite
Minimum Versions: Athena 5.21.2.R

The example described in this section originated from studies accompanying the development of a lift-off resist profile for sub-micron MESFET fabrication using a tri-level resist technique. The goal of this process development is to get the lift-off profile in the bottom resist of the tri-level system without using special e-beam exposure techniques or multi-layer e-beam resists.

The resist system used instead is quite simple. The bottom layer is a hard baked standard Novolac or polyimide resist covered with a silicon nitride intermediate layer. This intermediate layer is used during the etching process as a hard mask. The top layer is a PMMA resist structured by conventional electron beam lithography. The top PMMA resist is stripped and etching begun.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.