Transient Enhanced Diffusion using <311> Clusters

andfex04.in : Transient Enhanced Diffusion using <311> Clusters

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example demonstrates the damage enhanced diffusion effect in a phosphorus implant typical of MOS LDD processing.

Diffusion enhancement due to defects introduced during heavy implants are responsible for the Transient Enhanced Diffusion (TED) or Rapid Thermal Annealing (RTA) effect.

This example shows the Stanford 311 cluster diffusion model. To enable this model the syntax used is method full.cpl cluster.dam i.loop.sink high.conc This model is an extension to the fully coupled model that describes the dissolution of 311 interstitial clusters.

The implant damage is defined in the <311> model using the cluster statement. The parameters min.cluster and max.cluster describe the doping levels at which clusters form.

Tuning of the TED effect is performed using the release time of the clusters speicified as follows:

cluster tau.311.0= <val> tau.311.E= <val>

When modeling point defects, it is necessary to extend the substrate of the simulation space to provide an adequate sink for the point defects. Simulations show that a depth of 20 to 50 microns is required in most cases.

The plot shows the evolution of the transient enhanced diffusion. At 800 degrees the transient effect lasts for about 5 minutes. The overlay plot shows how the diffusion in the first 5 minutes is greater the subsequent 55 minutes.

A second plot shows the location and concentration of the interstitial clusters and the free interstitials. As the clusters decay they release free interstitials that provide the diffusion mechanism for the phosphorus.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.