Damage Enhanced Diffusion of Arsenic

andfex03.in : Damage Enhanced Diffusion of Arsenic

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example demonstrates the damage enhanced diffusion effect in a heavy arsenic implant typical of MOS source/drain or bipolar emitter processing.

Diffusion enhancement due to defects introduced during heavy implants are responsible for the Transient Enhanced Diffusion (TED) or Rapid Thermal Annealing (RTA) effect.

One of the key parameters in TED modeling using the full.cpl model is the amount of implant damage generated by the implant. This is controlled using the UNIT.DAMAGE model. The parameter DAM.FACT scales the interstitial concentration relative to the doping profile.

A 15 second heat cycle at 1000 Celsius is performed and the resulting dopant profile saved.

When modeling point defects it is necessary to extend the substrate of the simulation space to provide an adequate sink for the point defects. Simulations show that a depth of 20 to 50 microns is required in most cases.

This example re-runs the simulation using the fermi model to compare results. The overlay plot at the end of the simulation demonstrates the extra implant damage enhancement to the diffusion depth.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.