Oxidation Enhanced Diffusion of Boron

andfex02.in : Oxidation Enhanced Diffusion of Boron

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example demonstrates the diffusion models for Oxidation Enhanced Diffusion (OED). When diffusion is performed in an oxidizing ambient, point defects are injected into the silicon with a rate that is a function of the rate at which the silicon is oxidizing. This point defect injection gives rise to an increased diffusion that is commonly referred to as OED.

To model OED the TWO.DIM diffusion model must specified on the METHOD statement. When this model is specified, the interstitial and vacancy concentration will be calculated along with the impurities. This model loosely couples the point defects, generated by the oxidizing Si-SiO2 interface, with the diffusing boron.

When modeling point defects it is necessary to extend the substrate of the simulation space to provide an adequate sink for the point defects. Simulations show that a depth of 20 to 50 microns is required in most cases.

This example re-runs the simulation using the fermi model to compare results. The overlay plot at the end of the simulation demonstrates the extra oxidation enhancement to the diffusion depth.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.