Stress Simulation in Inverter Cell : Stress Simulation in Inverter Cell

Requires: Victory Process and Victory Stress
Minimum Versions: Victory Process 7.6.8.R , Victory Stress 2.4.8.R

The most common method of introducing desirable stresses into transistor channel region is the deposition of high tensile or high compressive films of nitride type materials.

This example is the second of two examples devoted to simulation of stresses and mobilities in a 3D invertor cell. This example shows stress simulation in an inverter cell consisted of one n-type FinFET and two p-type FinFETS located parallel to each other. The previous example vsex06 deals with details of a separate n-FinFET. Detailed results of these two examples are presented in the paper in Simulation Standard:

The input deck consists of five Sections:

  • Definition of geometrical domain and region limits for subsequent consistent mesh formation
  • Victory Process process steps
  • Cartesian mesh formation and saving the structure for stress calculation
  • Stress calculation
  • Visualization and analysis of simulation results, extraction of average stresses and mobility enhancement factors

All details of device structure, simulation mesh, material parameters, process flow, as well as visualization and extraction procedures are described in comments within the input deck.

To load and run this example, select the Load example button in DeckBuild Examples window. This will copy the input file and any support files to your current working directory. Select the Run button to execute the example.

Note: To run this example you have to enable System commands in the Options menu from DeckBuild: Main Control .