Stress Simulation in n-FinFET device

vsex06.in : Stress Simulation in n-FinFET device

Requires: Victory Process and Victory Stress
Minimum Versions: Victory Process 7.6.8.R , Victory Stress 2.4.8.R

The most common method of introducing desirable stresses into transistor channel region is the deposition of high tensile or high compressive films of nitride type materials.

A tensile film (when intrinsic stress value is positive) improves drive current in n-devices due to enhancement of electron mobility whereas a compressive film (when intrinsic stress value is negative) enhance the hole mobility for n-device.

This example is the first of two examples devoted to simulation of stresses and mobilities in a 3D invertor cell. This example shows stress simulation in a single n-FinFET device while the next example vsex07 deals with the cell consisted from several FinFETs. Detailed results of these two examples are presented in the paper in Simulation Standard:

www.silvaco.com/tech_lib_TCAD/simulationstandard/2012/jan_feb_mar/a1/a1.html

The input deck consists of five Sections:

  • Definition of geometrical domain and region limits for subsequent consistent mesh formation
  • Victory Process process steps
  • Cartesian mesh formation and saving the structure for stress calculation
  • Stress calculation
  • Visualization and analysis of simulation results, extraction of average stresses and mobility enhancement factors

All details of device structure, simulation mesh, material parameters, process flow, as well as visualization and extraction procedures are described in comments within the input deck.

To load and run this example, select the Load example button in DeckBuild Examples window. This will copy the input file and any support files to your current working directory. Select the Run button to execute the example.

Note: To run this example you have to enable System commands in the Options menu from DeckBuild: Main Control .