Stress simulation for a extremely thin SOI (ETSOI) CMOS

vsex04.in : Stress simulation for a extremely thin SOI (ETSOI) CMOS

Requires: Victory Process and Victory Stress
Minimum Versions: Victory Process 7.6.8.R, Victory Stress 2.4.8.R

Extremely thin SOI (ETSOI) devices are attractive for low power applications. The integration scheme of the ETSOI technology allows formation of raised source/drain (RSD) extensions for both NFET and PFET by using a single mask. Another feature of ETSOI CMOS is the combination of two strain enhancement techniques, (1) Si:C RSD for NFET and SiGe RSD for PFET, and (2) stress liner effect coupled with faceted RSD.

Details and features of the ETSOI CMOS can be found in [1], [2]. This example demonstrates stress simulation for ETSOI CMOS. Geometry parameters are taken from Figs.3 and 4, of Ref. [2]. The nominal gate length for this simulation is 26nm. The stress simulation has been performed for a half of the device due to its symmetry. The following geometry parameters can be changed in this simulation in order to investigate the influence of the device geometry on stress distribution, and, therefore, on device performance: 1) - the gate length; 2) - the gate height; 3) - the RSD height; 4) - the thickness of stress liner; 5) - the gate oxide thickness; 6) - the thickness of silicon on insulator (SOI); 7) - the thickness of bottom oxide; 8) - proximity of the bottom of RSD to the gate; 9) - proximity of the top of RSD to the gate (in case of faceted RSD); 10) - the width of simulation domain. Also, the following 5 logical parameters can be used to vary simulation conditions:

flag_faceted_RSD specifies that RSD has a slopped edge;

flag_RSD specifies that RSD serves as a stressor;

flag_liner specifies nitride stressor;

flag_poly specifies that poly serves as a stressor;

mat_RSD specifies that materials for RSD, mat_RSD=-1 corresponds to SiGe and mat_RSD=1 corresponds to Si:C.

All above parameters can be varied or used in design of experiments. The nominal values of parameters are set to correspond to conditions presented in Figs. 3 and 4 of [2].

The 2D structure is obtain by Victory Process running in 2D mode and is subsequently used in Victory Stress. The isotropic model for stress simulations is used in this simulation since the structure is 2D. Thereofre, the elastic properties of Si, SiGe, and Si:C are considered to be the same as for polysilicon. All parameters mentioned above could be changed. Each run of this example produces stress distributions for three types of stressors: first is for RSD regions either of SiGe with negative intrinsic stress or of Si:C with positive intrinsic stress; the second is the stress-liner made of nitride; the third one is the stress memorized in the gate. As a result of the simulations the four files will be saved for two geometries of RSD (vertical and faceted) and for all three stressor types.

In case of vertical RSD these four files are: vsex04_0.str (initial structure), vsex04_2.str (RSD-stressor), vsex04_4.str (stress-liner), and vsex04_6.str (poly gate stressor).

In case of faceted RSD these four files are: vsex04_1.str (initial structure), vsex04_3.str (RSD-stressor), vsex04_5.str (stress-liner), and vsex04_7.str (poly gate stressor).

To load and run this example, select the Load example button in DeckBuild Examples window. This will copy the input file and any support files to your current working directory. Select the Run button to execute the example.

[1] K. Cheng, et al, Symp. VLSI Tech, 2009, p.212

[2] K. Cheng, et al, IEDM 2009, p. 49