GaAs MESFET Gate Simulation in 1D

ancoex03.in : GaAs MESFET Gate Simulation in 1D

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example simulates a simple 1D GaAs Mesfet structure underneath the gate. Carbon is used as background dopant in the INIT statement. Beryllium and silicon are implanted into GaAs using the analytical implant model. Next the anneal step is performed using the default Fermi method.

The hump in the beryllium profile where it intersects with silicon profile is due to the electric field effect.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.